Single N-Channel Field Effect Transistor

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • These Devices are Pb−Free and are RoHS Compliant

单 N 沟道功率 MOSFET 60V，68A，6.7mΩ

Single N-Channel Field Effect Transistor

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • These Devices are Pb−Free and are RoHS Compliant

Single N-Channel Field Effect Transistor

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • These Devices are Pb−Free and are RoHS Compliant

MOSFET ??Power, Single, N-Channel 60 V, 7.0 m, 71 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFS5C670NWF − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and

Power MOSFET

文件：86.82 Kbytes Page：6 Pages

Power MOSFET

文件：86.82 Kbytes Page：6 Pages

Power MOSFET

文件：86.82 Kbytes Page：6 Pages