Power MOSFET 30 V, 147 A, Single N−Channel, SO−8 FL

Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • Dual Sided Cooling Capability • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications • CPU Power Deliver

功率 MOSFET，30V，147A，2.0mΩ，单 N 沟道，热增强，SO-8FL

Power MOSFET 30 V, 147 A, Single N−Channel, SO−8 FL

Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • Dual Sided Cooling Capability • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications • CPU Power Deliver

Dual N-Channel Enhancement Mode Field Effect Transistor

Description The ACE4922B is the Dual N-Channel enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices

Surface Mount High Current Power Inductors

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Dual N-Channel Enhancement Mode MOSFET

文件：644.51 Kbytes Page：7 Pages

Dual N-Channel Enhancement Mode Field Effect Transistor

文件：837.78 Kbytes Page：6 Pages

Dual N-Channel MOSFET uses advanced trench technology

文件：2.53215 Mbytes Page：4 Pages