MOSFET - Power, Dual N-Channel, DUAL SO8FL 60 V, 29.7 m, 19 A

文件：252.45 Kbytes Page：7 Pages

Power MOSFET Power, N-Channel, DUAL SO8FL, 60 V, 29.7 mΩ, 19 A

MOSFET - Power, Dual N-Channel, DUAL SO8FL 60 V, 29.7 m, 19 A

文件：252.45 Kbytes Page：7 Pages

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 136A@ TC=25℃ ·Drain Source Voltage- : VDSS=60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 3.2mΩ(Max) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch m

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID=195A@ TC=25℃ ·Drain Source Voltage : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 3.1mΩ(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c

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