双 N 沟道，增强模式功率 MOSFET，20V，6.5A，35mΩ

Power MOSFET 6.0 Amps, 20 Volts

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Power MOSFET 6.0 Amps, 20 Volts

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Power MOSFET 6.0 Amps, 20 Volts

文件：80.25 Kbytes Page：6 Pages

Power MOSFET 6.0 Amps, 20 Volts

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Dual N-Channel 20-V (D-S) MOSFET

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N-Channel Enhancement Mode Power MOSFET

Description The G6N02L uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

DUAL TMOS POWER MOSFET 6.0 AMPERES 20 VOLTS

Dual HDTMOS devices are an advanced series of power MOSFETs which utilize Motorola’s High Cell Density TMOS process. These miniature surface mount MOSFETs feature low RDS(on) and true logic level performance. Dual HDTMOS devices are designed for use in low voltage, high speed switching application

Dual N-channel TrenchMOS logic level FET

1.1 General description Dual logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits

Power MOSFET

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Dual N-channel TrenchMOS logic level FET