位置：首页 > IC中文资料 > NTHL020N120SC1D
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
NTHL020N120SC1D | MOSFET - SiC Power, Single N-Channel 文件：313.64 Kbytes Page：7 Pages | ONSEMI 安森美半导体 |   | |
MOSFET - SiC Power, Single N-Channel 文件：313.64 Kbytes Page：7 Pages | ONSEMI 安森美半导体 | | ||
Silicon Carbide (SiC) MOSFET – 20 mohm, 1200V, M1, D2PAK-7L Features • Typ. RDS(on) = 20 m • Ultra Low Gate Charge (QG(tot) = 220 nC) • High Speed Switching with Low Capacitance (Coss = 258 pF) • 100 Avalanche Tested • TJ = 175°C • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interconnection) Typi | ONSEMI 安森美半导体 | | ||
Silicon Carbide (SiC) MOSFET – EliteSiC, 20mohm, 1200V, M1, D2PAK-7L Features • Typ. RDS(on) = 20 m • Ultra Low Gate Charge (QG(tot) = 220 nC) • High Speed Switching with Low Capacitance (Coss = 258 pF) • 100 Avalanche Tested • TJ = 175°C • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interconnection) Typi | ONSEMI 安森美半导体 | | ||
MOSFET - Power, Silicon Carbide, Single N-Channel, D2PAK7L, 1200 V, 98 A, 20 mOhm 文件：368.04 Kbytes Page：7 Pages | ONSEMI 安森美半导体 | | ||
MOSFET ??N?륝hannel, Silicon Carbide 1200 V, 20 m 文件：215.21 Kbytes Page：8 Pages | ONSEMI 安森美半导体 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
onsemi(安森美) |
24+ |
TO247 |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
|||
ON |
24+ |
N/A |
5004 |
原装原装原装 |
|||
ON/安森美 |
24+ |
TO247 |
30000 |
代理原装现货,价格优势。 |
|||
ON/安森美 |
22+ |
TO-247 |
9000 |
原装正品,支持实单! |
|||
onsemi |
23+ |
TO-247-3LD |
1356 |
原厂正品现货SiC MOSFET全系列 |
|||
ONSEMI |
23+ |
TO-247 |
450 |
正规渠道,只有原装! |
|||
ONSEMI |
21+ |
TO-247 |
450 |
全新原装 |
|||
ON(安森美) |
2526+ |
TO-247-3 |
50000 |
只做原装优势现货库存,渠道可追溯 |
|||
ONN |
2324+ |
60750 |
原装正品,超低价出售 |
||||
ON(安森美) |
23+ |
TO-247-3 |
13252 |
公司只做原装正品,假一赔十 |
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DdatasheetPDF页码索引
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