位置：首页 > IC中文资料 > NTHL020N120SC1
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
NTHL020N120SC1 | Silicon Carbide (SiC) MOSFET – 20 mohm, 1200V, M1, TO-247-3L Features • Typ. RDS(on) = 20 m • Ultra Low Gate Charge (QG(tot) = 203 nC) • Capacitance (Coss = 260 pF) • 100 UIL Tested • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interconnection) Typical Applications • UPS • DC−DC Converter • Boos | ONSEMI 安森美半导体 |   | |
NTHL020N120SC1 | Silicon Carbide (SiC) MOSFET – EliteSiC, 20mohm, 1200V, M1, TO-247-3L Features • Typ. RDS(on) = 20 m • Ultra Low Gate Charge (QG(tot) = 203 nC) • Capacitance (Coss = 260 pF) • 100 UIL Tested • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interconnection) Typical Applications • UPS • DC−DC Converter • Boost | ONSEMI 安森美半导体 | | |
NTHL020N120SC1 | MOSFET - SiC Power, Single N-Channel 文件：313.64 Kbytes Page：7 Pages | ONSEMI 安森美半导体 | | |
Silicon Carbide (SiC) MOSFET – 20 mohm, 1200V, M1, TO-247-3L Features • Typ. RDS(on) = 20 m • Ultra Low Gate Charge (QG(tot) = 203 nC) • Capacitance (Coss = 260 pF) • 100 UIL Tested • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interconnection) Typical Applications • UPS • DC−DC Converter • Boos | ONSEMI 安森美半导体 | | ||
Silicon Carbide (SiC) MOSFET – EliteSiC, 20mohm, 1200V, M1, TO-247-3L Features • Typ. RDS(on) = 20 m • Ultra Low Gate Charge (QG(tot) = 203 nC) • Capacitance (Coss = 260 pF) • 100 UIL Tested • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interconnection) Typical Applications • UPS • DC−DC Converter • Boost | ONSEMI 安森美半导体 | | ||
MOSFET - SiC Power, Single N-Channel 文件：313.64 Kbytes Page：7 Pages | ONSEMI 安森美半导体 | | ||
Silicon Carbide (SiC) MOSFET – 20 mohm, 1200V, M1, D2PAK-7L Features • Typ. RDS(on) = 20 m • Ultra Low Gate Charge (QG(tot) = 220 nC) • High Speed Switching with Low Capacitance (Coss = 258 pF) • 100 Avalanche Tested • TJ = 175°C • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interconnection) Typi | ONSEMI 安森美半导体 | | ||
Silicon Carbide (SiC) MOSFET – EliteSiC, 20mohm, 1200V, M1, D2PAK-7L Features • Typ. RDS(on) = 20 m • Ultra Low Gate Charge (QG(tot) = 220 nC) • High Speed Switching with Low Capacitance (Coss = 258 pF) • 100 Avalanche Tested • TJ = 175°C • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interconnection) Typi | ONSEMI 安森美半导体 | | ||
MOSFET - Power, Silicon Carbide, Single N-Channel, D2PAK7L, 1200 V, 98 A, 20 mOhm 文件：368.04 Kbytes Page：7 Pages | ONSEMI 安森美半导体 | | ||
MOSFET ??N?륝hannel, Silicon Carbide 1200 V, 20 m 文件：215.21 Kbytes Page：8 Pages | ONSEMI 安森美半导体 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON(安森美) |
24+ |
NA/ |
8735 |
原厂直销,现货供应,账期支持! |
|||
onsemi(安森美) |
24+ |
TO-247 |
8110 |
支持大陆交货,美金交易。原装现货库存。 |
|||
ON SEMICONDUCTOR |
23+ |
NTHL025N065SC1 |
5864 |
原装原标原盒 给价就出 全网最低 |
|||
ON |
24+ |
N/A |
39500 |
进口原装现货 支持实单价优 |
|||
ON(安森美) |
2447 |
TO-247-3 |
315000 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
ON/安森美 |
22+ |
24000 |
原装正品现货,实单可谈,量大价优 |
||||
ON |
24+ |
NA |
3000 |
进口原装 假一罚十 现货 |
|||
onsemi(安森美) |
2025+ |
TO-247-3 |
55740 |
||||
ON/安森美 |
2324+ |
TO-247-3 |
78920 |
二十余载金牌老企,研究所优秀合供单位,您的原厂窗口 |
|||
ON(安森美) |
2405+ |
TO-247-3 |
50000 |
只做原装优势现货库存,渠道可追溯 |
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