型号 功能描述 生产厂家 企业 LOGO 操作
NTHL020N120SC1

Silicon Carbide (SiC) MOSFET – 20 mohm, 1200V, M1, TO-247-3L

Features • Typ. RDS(on) = 20 m • Ultra Low Gate Charge (QG(tot) = 203 nC) • Capacitance (Coss = 260 pF) • 100 UIL Tested • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interconnection) Typical Applications • UPS • DC−DC Converter • Boos

ONSEMI

安森美半导体

NTHL020N120SC1

Silicon Carbide (SiC) MOSFET – EliteSiC, 20mohm, 1200V, M1, TO-247-3L

Features • Typ. RDS(on) = 20 m • Ultra Low Gate Charge (QG(tot) = 203 nC) • Capacitance (Coss = 260 pF) • 100 UIL Tested • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interconnection) Typical Applications • UPS • DC−DC Converter • Boost

ONSEMI

安森美半导体

NTHL020N120SC1

碳化硅(SiC)MOSFET – EliteSiC系列,20 mohm,1200V,M1,TO-247-3L封装

ONSEMI

安森美半导体

NTHL020N120SC1

MOSFET - SiC Power, Single N-Channel

文件:313.64 Kbytes Page:7 Pages

ONSEMI

安森美半导体

Silicon Carbide (SiC) MOSFET – 20 mohm, 1200V, M1, TO-247-3L

Features • Typ. RDS(on) = 20 m • Ultra Low Gate Charge (QG(tot) = 203 nC) • Capacitance (Coss = 260 pF) • 100 UIL Tested • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interconnection) Typical Applications • UPS • DC−DC Converter • Boos

ONSEMI

安森美半导体

Silicon Carbide (SiC) MOSFET – EliteSiC, 20mohm, 1200V, M1, TO-247-3L

Features • Typ. RDS(on) = 20 m • Ultra Low Gate Charge (QG(tot) = 203 nC) • Capacitance (Coss = 260 pF) • 100 UIL Tested • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interconnection) Typical Applications • UPS • DC−DC Converter • Boost

ONSEMI

安森美半导体

MOSFET - SiC Power, Single N-Channel

文件:313.64 Kbytes Page:7 Pages

ONSEMI

安森美半导体

Silicon Carbide (SiC) MOSFET – 20 mohm, 1200V, M1, D2PAK-7L

Features • Typ. RDS(on) = 20 m • Ultra Low Gate Charge (QG(tot) = 220 nC) • High Speed Switching with Low Capacitance (Coss = 258 pF) • 100 Avalanche Tested • TJ = 175°C • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interconnection) Typi

ONSEMI

安森美半导体

Silicon Carbide (SiC) MOSFET – EliteSiC, 20mohm, 1200V, M1, D2PAK-7L

Features • Typ. RDS(on) = 20 m • Ultra Low Gate Charge (QG(tot) = 220 nC) • High Speed Switching with Low Capacitance (Coss = 258 pF) • 100 Avalanche Tested • TJ = 175°C • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interconnection) Typi

ONSEMI

安森美半导体

MOSFET - Power, Silicon Carbide, Single N-Channel, D2PAK7L, 1200 V, 98 A, 20 mOhm

文件:368.04 Kbytes Page:7 Pages

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安森美半导体

MOSFET ??N?륝hannel, Silicon Carbide 1200 V, 20 m

文件:215.21 Kbytes Page:8 Pages

ONSEMI

安森美半导体

更新时间:2025-11-7 12:08:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ON(安森美)
23+
TO-247-3
14839
公司只做原装正品,假一赔十
ON(安森美)
2511
TO-247-3
4560
电子元器件采购降本 30%!公司原厂直采,砍掉中间差价
ON SEMICONDUCTOR
23+
NTHL025N065SC1
5864
原装原标原盒 给价就出 全网最低
ON(安森美)
24+
NA/
8735
原厂直销,现货供应,账期支持!
ON/安森美
23+
TO247
39639
原厂授权一级代理,专业海外优势订货,价格优势、品种
24+
N/A
72000
一级代理-主营优势-实惠价格-不悔选择
ON(安森美)
2447
TO-247-3
315000
一级代理专营品牌!原装正品,优势现货,长期排单到货
onsemi
23+
59715
加QQ:78517935原装正品有单必成
ON/安森美
24+
TO247
30000
代理原装现货,价格优势。
ON
24+
N/A
39500
进口原装现货 支持实单价优

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