Silicon Carbide (SiC) MOSFET – 20 mohm, 1200V, M1, D2PAK-7L

Features • Typ. RDS(on) = 20 m • Ultra Low Gate Charge (QG(tot) = 220 nC) • High Speed Switching with Low Capacitance (Coss = 258 pF) • 100 Avalanche Tested • TJ = 175°C • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interconnection) Typi

Silicon Carbide (SiC) MOSFET – EliteSiC, 20mohm, 1200V, M1, D2PAK-7L

Features • Typ. RDS(on) = 20 m • Ultra Low Gate Charge (QG(tot) = 220 nC) • High Speed Switching with Low Capacitance (Coss = 258 pF) • 100 Avalanche Tested • TJ = 175°C • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interconnection) Typi

MOSFET - Power, Silicon Carbide, Single N-Channel, D2PAK7L, 1200 V, 98 A, 20 mOhm

文件：368.04 Kbytes Page：7 Pages

Silicon Carbide (SiC) MOSFET – 20 mohm, 1200V, M1, D2PAK-7L

Features • Typ. RDS(on) = 20 m • Ultra Low Gate Charge (QG(tot) = 220 nC) • High Speed Switching with Low Capacitance (Coss = 258 pF) • 100 Avalanche Tested • TJ = 175°C • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interconnection) Typi

Silicon Carbide (SiC) MOSFET – EliteSiC, 20mohm, 1200V, M1, D2PAK-7L

Features • Typ. RDS(on) = 20 m • Ultra Low Gate Charge (QG(tot) = 220 nC) • High Speed Switching with Low Capacitance (Coss = 258 pF) • 100 Avalanche Tested • TJ = 175°C • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interconnection) Typi

MOSFET ??N?륝hannel, Silicon Carbide 1200 V, 20 m

文件：215.21 Kbytes Page：8 Pages

MOSFET - SiC Power, Single N-Channel

文件：313.64 Kbytes Page：7 Pages