Silicon NPN Transistor UHF High Speed Switch

Description: The NTE64 is a silicon NPN high frequency transistor designed primarily for use in high–gain, low noise small–signal amplifiers and applications requiring fast switching times. Features: High Current Gain–Bandwidth Product: fT = 4.5GHz Typ @ IC = 15mA Low Noise Figure: N

Bi-Polar transistor Selector Guide

Unijunction Transistor

Description: The NTE6400 & NTE6400A Silicon Unijunction Transistors are three terminal devices having a stable “N” type negative resistance characteristic over a wide temperature range. A stable peak point voltage, a low peak point current, and a high pulse pulse current make these devices

Unijunction Transistor

Description: The NTE6400 & NTE6400A Silicon Unijunction Transistors are three terminal devices having a stable “N” type negative resistance characteristic over a wide temperature range. A stable peak point voltage, a low peak point current, and a high pulse pulse current make these devices

Unijunction Transistor

Description: The NTE6401 is designed for use in pulse and timing circuits, sensing circuits and thyristor trigger circuits. Features: Low Peak Point Current: 5µA (Max) Low Emitter Reverse Current: .005µA (Typ) Passivated Surface for Reliability & Uniformity Absolute Ma

Programmable Unijunction Transistor (PUT)

Description: The NTE6402 is a 3–terminal silicon planer passivated PNP device available in the standard plastic low cost TO98 and TO92 type packages. The terminals are designated as anode, anode gate, and cathode. This device has been characterized as a Programmable Unijunction Transistor (P

Integrated Circuit Silicon Bilateral Switch (SBS)

Description: The NTE6403 is a silicon planer, monolithic integrated circuit having the electrical characteristics of a bilateral thyristor. This device is designed to switch at 8 volts with a 0.02/°C temperature coefficient and excellently matched characteristics in both directions. A gate lead

Silicon Unilateral Switch (SUS)

Description: The NTE6404 is a silicon planar, monolithic integrated circuit having thyristor electrical characteristics closely approximating those of an “ideal” four layer diode. The device is designed to switch at 8 volts with a 0.02/°C temperature coefficient. A gate lead is provided to elim

Bilateral Trigger Diodes (DIACS)

Description: The NTE6407 thru NTE6412 are bilateral trigger DIACs offering a range of voltage characteristics from 28V to 63V. These devices are triggered from a blocking–to–conduction state for either polarity of applied voltage whenever the amplitude of applied voltage exceeds the breakover v

Bilateral Trigger Diodes (DIACS)

Description: The NTE6407 thru NTE6412 are bilateral trigger DIACs offering a range of voltage characteristics from 28V to 63V. These devices are triggered from a blocking–to–conduction state for either polarity of applied voltage whenever the amplitude of applied voltage exceeds the breakover v

Unijunction Transistor

Description: The NTE6409 is designed for use in pulse and timing circuits, sensing circuits and thyristor trigger circuits. Features: Low Peak Point Current: 2µA Max Low Emitter Reverse Current: 200nA Max Passivated Surface for Reliability & Uniformity Absolute Maximum Ra

Unijunction Transistor (UJT)

Description: The NTE6410 is a PN unijunction transistor in a TO92 type package designed for use in pulse and timing circuits, sensing circuits and thyristor trigger circuits. Absolute Maximum Ratings: (TA = +25°C unless other specified) RMS Power Dissipation, PD . . . . . . . . . . . .

Bilateral Trigger Diodes (DIACS)

Description: The NTE6407 thru NTE6412 are bilateral trigger DIACs offering a range of voltage characteristics from 28V to 63V. These devices are triggered from a blocking–to–conduction state for either polarity of applied voltage whenever the amplitude of applied voltage exceeds the breakover v

Bilateral Trigger Diodes (DIACS)

Description: The NTE6407 thru NTE6412 are bilateral trigger DIACs offering a range of voltage characteristics from 28V to 63V. These devices are triggered from a blocking–to–conduction state for either polarity of applied voltage whenever the amplitude of applied voltage exceeds the breakover v

Bidirectional Thyristor Diodes (SIDAC)

Description: The NTE6415 through NTE6419 SIDAC devices are silicon bilateral voltage triggered switches with greater power handling capabilities than standard DIACs. Upon application of a voltage exceeding the SIDAC breakover voltage point, the SIDAC switches on through a negative resistance re

Bidirectional Thyristor Diodes (SIDAC)

Description: The NTE6415 through NTE6419 SIDAC devices are silicon bilateral voltage triggered switches with greater power handling capabilities than standard DIACs. Upon application of a voltage exceeding the SIDAC breakover voltage point, the SIDAC switches on through a negative resistance re

SUS

Programmable Unijunction transistor (PUT)