Description:

The NTE64 is a silicon NPN high frequency transistor designed primarily for use in high–gain, low noise small–signal amplifiers and applications requiring fast switching times.

Features:

High Current Gain–Bandwidth Product: fT = 4.5GHz Typ @ IC = 15mA

Low Noise Figure: NF = 2dB Typ @ f = 1GHz

High Power Gain: Gpe = 10dB Min @ f = 1GHz

Third Order Intercept: +23dBm Typ

Absolute Maximum Ratings:

Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15V

Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V

Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3V

Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . .30mA

Total Device Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . 0.375W

Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.3mW/°C

Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . -65° to +150°C

Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . 300°C/W