Light Emitting Diode Miniature, Diffused Red

Description: The NTE3001 is a diffused Gallium Arsenide Phosphide diode mounted in a two lead epoxy package with a red diffused lens. On forward bias, this device emits a spectrally narrow band of visible light which peaks at 660nm. The NTE3001 is intended for high volume indicator light app

LEDs

Description:\nThe NTE3001 is a diffused Gallium Arsenide Phosphide diode mounted in a two lead epoxy package with a red diffused lens. On forward bias, this device emits a spectrally narrow band of visible light which peaks at 660nm.\nThe NTE3001 is intended for high volume indicator light applicati

Light Emitting Diode (LED) Subminiature

Description: The NTE30008 thru NTE30010 are solid state LED lamps in a subminiature type package. The High Efficiency Red source color device (NTE30008) is made with Gallium Arsenide Phosphide on Gallium Phosphide Orange Light Emitting Diode. The Super Bright Green source color device (NTE30009

Light Emitting Diode (LED) PLCC Surface Mount

Description: The NTE30011 thru NTE30013 are 3.5mm x 2.8mm chip LED lamps in a PLCC surface mount type package. The Super Bright Red source color device (NTE30011) is made with Gallium Arsenide Red Light Emitting Diode. The Super Bright Green source color device (NTE30012) is made with Gallium P

Light Emitting Diode (LED) PLCC Surface Mount

Description: The NTE30011 thru NTE30013 are 3.5mm x 2.8mm chip LED lamps in a PLCC surface mount type package. The Super Bright Red source color device (NTE30011) is made with Gallium Arsenide Red Light Emitting Diode. The Super Bright Green source color device (NTE30012) is made with Gallium P

Light Emitting Diode (LED) PLCC Surface Mount

Description: The NTE30011 thru NTE30013 are 3.5mm x 2.8mm chip LED lamps in a PLCC surface mount type package. The Super Bright Red source color device (NTE30011) is made with Gallium Arsenide Red Light Emitting Diode. The Super Bright Green source color device (NTE30012) is made with Gallium P

LEDs

Description:\nThe NTE30014 thru NTE30016 are Right Angle LED Indicators in a T-1 (3mm) type package. The High Efficiency Red source color device (NTE30014) is made with Gallium Arsenide Phosphide on Gallium Phosphide Orange Light Emitting Diode. The Green source color device (NTE30015) is made with

Light Emitting Diode (LED)

Description: The NTE30014 thru NTE30016 are Right Angle LED Indicators in a T-1 (3mm) type package. The High Efficiency Red source color device (NTE30014) is made with Gallium Arsenide Phosphide on Gallium Phosphide Orange Light Emitting Diode. The Green source color device (NTE30015) is made w

Light Emitting Diode (LED)

Description: The NTE30014 thru NTE30016 are Right Angle LED Indicators in a T-1 (3mm) type package. The High Efficiency Red source color device (NTE30014) is made with Gallium Arsenide Phosphide on Gallium Phosphide Orange Light Emitting Diode. The Green source color device (NTE30015) is made w

Light Emitting Diode (LED)

Description: The NTE30014 thru NTE30016 are Right Angle LED Indicators in a T-1 (3mm) type package. The High Efficiency Red source color device (NTE30014) is made with Gallium Arsenide Phosphide on Gallium Phosphide Orange Light Emitting Diode. The Green source color device (NTE30015) is made w

Light Emitting Diode (LED) 0603 Surface Mount

Features: ● NTE30018: Super Bright Orange (AllnGaP/GaAs) ● NTE30019: Super Bright Blue ● 1.6mm x 0.8mm (0603) SMT LED, 0.75mm Thickness ● Low Power Consumption ● Wide Viewing Angle ● Ideal for Backlight and Indicator Applications

Light Emitting Diode (LED) 0603 Surface Mount

Features: ● NTE30018: Super Bright Orange (AllnGaP/GaAs) ● NTE30019: Super Bright Blue ● 1.6mm x 0.8mm (0603) SMT LED, 0.75mm Thickness ● Low Power Consumption ● Wide Viewing Angle ● Ideal for Backlight and Indicator Applications

Surface Mount (SMT)

DARLINGTON POWER TRANSISTOR COMPLEMENTARY SILICON

Medium-Power Complementary Silicon Transistors . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain — hFE = 4000 (Typ) @ IC = 5.0 Adc • Monolithic Construction with Built–in Base–Emitter Shunt Resistors

10 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 60.80 VOLTS 150 WATTS

Medium-Power Complementary Silicon Transistors . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain — hFE = 4000 (Typ) @ IC = 5.0 Adc • Monolithic Construction with Built–in Base–Emitter Shunt Resistors

MICROWAVE POWER TRANSISTORS

The RF Line Microwave Power Transistors . . . designed primarily for large–signal output and driver amplifier stages in the 1.5 to 3.0 GHz frequency range. • Designed for Class B or C, Common Base Linear Power Amplifiers • Specified 28 Volt, 3.0 GHz Characteristics: Output Power — 1.0 to 5

SDH/SONET STM4/OC12 laser drivers

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