位置:首页 > IC中文资料第2572页 > MJ3001
MJ3001晶体管资料
MJ3001别名:MJ3001三极管、MJ3001晶体管、MJ3001晶体三极管
MJ3001生产厂家:美国摩托罗拉半导体公司
MJ3001制作材料:Si-N+Darl+Di
MJ3001性质:低频或音频放大 (LF)_开关管 (S)_功率放大 (L
MJ3001封装形式:直插封装
MJ3001极限工作电压:80V
MJ3001最大电流允许值:10A
MJ3001最大工作频率:<1MHZ或未知
MJ3001引脚数:2
MJ3001最大耗散功率:150W
MJ3001放大倍数:β>1000
MJ3001图片代号:E-44
MJ3001vtest:80
MJ3001htest:999900
- MJ3001atest:10
MJ3001wtest:150
MJ3001代换 MJ3001用什么型号代替:BDW83B...D,BDX65A,BDX65B...C,BDX67A,FH9C,2N6058,2N6059,
型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
MJ3001 | 10AMPEREDARLINGTONPOWERTRANSISTORSCOMPLEMENTARYSILICON60.80VOLTS150WATTS Medium-PowerComplementarySiliconTransistors ...foruseasoutputdevicesincomplementarygeneralpurposeamplifierapplications. •HighDCCurrentGain—hFE=4000(Typ)@IC=5.0Adc •MonolithicConstructionwithBuilt–inBase–EmitterShuntResistors | MotorolaMotorola, Inc 摩托罗拉 | ||
MJ3001 | DARLINGTONPOWERTRANSISTORCOMPLEMENTARYSILICON Medium-PowerComplementarySiliconTransistors ...foruseasoutputdevicesincomplementarygeneralpurposeamplifierapplications. •HighDCCurrentGain— hFE=4000(Typ)@IC=5.0Adc •MonolithicConstructionwithBuilt–inBase–EmitterShuntResistors | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ||
MJ3001 | PowerTransistors PowerTransistors TO-3Case(Continued) | CentralCentral Semiconductor Corp 美国中央半导体 | ||
MJ3001 | SiliconNPNPowerTransistors DESCRIPTION •WithTO-3package •DARLINGTON •HighDCcurrentgain •ComplementtotypeMJ2500/2501 APPLICATIONS •Foruseasoutputdevicesincomplementarygeneralpurposeamplifierapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ||
MJ3001 | COMPLEMENTARYSILICONPOWERDARLINGTONTRANSISTORS DESCRIPTION TheMJ2501isaSiliconEpitaxial-BasePNPpowertransistorsinmonolithicDarlingtonconfiguration,mountedinJedecTO-3metacase.Itisintentedforuseinpowerlinearandswitchingapplications. ■STMicroelectronicsPREFERRED SALESTYPES ■COMPLEMENTARYPNP-NPNDEVI | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | ||
MJ3001 | 10AmpereDarlingtonPowerTransistorsComplementarySilicon [multicomp] Features: •Medium-powercomplementarySiliconTransistorsforuseasoutputdevicesin complementarygeneralpurposeamplifierapplications. •HighDCCurrentGain hFE=1000(Typical)atIC=5.0A. •MonolithicconstructionwithbuiltBase-EmitterShuntResistors. | ETC1List of Unclassifed Manufacturers 未分类制造商 | ||
MJ3001 | Medium-PowerComplementarySiliconTransistors Medium-PowerComplementarySiliconTransistors ...foruseasoutputdevicesincomplementarygeneralpurposeamplifierapplications. •HighDCCurrentGain—hpE=4000(Typ)@IQ=5.0Adc •MonolithicConstructionwithBuilt-inBase-EmitterShuntResistors | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | ||
MJ3001 | COMPLEMENTARYPOWERDARLINGTONS COMPLEMENTARYPOWERDARLINGTONS TheMJ2500,andMJ2501aresiliconepitaxial-basePNPpowertransistorsinmonolithicDarlingtonconfigurationandaremountedinJedecTO-3metalcase. Theyareintentedforuseinpowerlinearandswitchingapplications. ThecomplementaryNPNtypesaretheMJ30 | COMSET Comset Semiconductor | ||
MJ3001 | SiliconNPNPowerTransistors DESCRIPTION •WithTO-3package •DARLINGTON •HighDCcurrentgain •ComplementtotypeMJ2500/2501 APPLICATIONS •Foruseasoutputdevicesincomplementarygeneralpurposeamplifierapplications | SAVANTIC Savantic, Inc. | ||
MJ3001 | COMPLEMENTARYPOWERDARLINGTONS COMPLEMENTARYPOWERDARLINGTONS TheMJ2500,andMJ2501aresiliconepitaxial-basePNPpowertransistorsinmonolithicDarlingtonconfigurationandaremountedinJedecTO-3metalcase. Theyareintentedforuseinpowerlinearandswitchingapplications. ThecomplementaryNPNtypesaretheMJ30 | COMSET Comset Semiconductor | ||
MJ3001 | Siliconcomplementarytrasistorspowerdarlington PowerTransistors TO-3Case(Continued) | CentralCentral Semiconductor Corp 美国中央半导体 | ||
MJ3001 | SiliconNPNPowerTransistors 文件:119.97 Kbytes Page:3 Pages | SAVANTIC Savantic, Inc. | ||
MJ3001 | COMPLEMENTARYSILICONPOWERDARLINGTONTRANSISTORS 文件:51.79 Kbytes Page:4 Pages | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | ||
MJ3001 | 封装/外壳:TO-204AA,TO-3 包装:剪切带(CT)带盒(TB) 描述:TRANS NPN DARL 80V 10A TO3 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | ||
MICROWAVECWBIPOLAR [ACRIANINC] GENERALDESCRIPTION The3001isacommonbasetransistorcapableofproviding1WattsofCWRFoutputpowerat3000MHz.Thishermeticallysealedtransistorisspecificallydesignedtelemetryandtelecommunicationsapplications.Itusesgoldmetalizationanddiffusedballastingtop | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
1Watt-28Volts,ClassCMicrowave3000MHz GENERALDESCRIPTION The3001isaCOMMONBASEtransistorcapableofproviding1WattsClassC,RFoutputpowerat3000MHz.Goldmetalizationanddiffusedballastingareusedtoprovidehighreliabilityandsupremeruggedness.ThetransistorusesafullyhermeticHighTemperatureSolderSealedpa | GHZTECHGHz Technology GHz Technology | |||
KKMaxi-3.96mm&5.08mmModularInterconnectionSystem KEYFEATURES ■Availableon3.96mmand5.08mmcenterspacings ■Polarisationviainsertablekeysandpegs ■Allowsconnectionsanywhereontheboard ■Doublecantileverstyleterminal ■Selectivegoldplatingoptions ■End-to-endstackingcapabilities ■Lockingrampforimprovedmatedret | MolexMolex Incorporated 莫仕美国莫仕公司 | |||
RFManual16thedition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | |||
KNOB 文件:80.14 Kbytes Page:1 Pages | etc2List of Unclassifed Manufacturers etc2未分类制造商 |
MJ3001产品属性
- 类型
描述
- 型号
MJ3001
- 功能描述
达林顿晶体管 NPN Darlington Power LTB 9-2009
- RoHS
否
- 制造商
Texas Instruments
- 配置
Octal
- 晶体管极性
NPN 集电极—发射极最大电压
- VCEO
50 V 发射极 - 基极电压
- VEBO
集电极—基极电压
- 最大直流电集电极电流
0.5 A
- 最大工作温度
+ 150 C
- 安装风格
SMD/SMT
- 封装/箱体
SOIC-18
- 封装
Reel
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ST/意法 |
2020+ |
NA |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
|||
MOT/ON |
专业铁帽 |
TO-3 |
67500 |
铁帽原装主营-可开原型号增税票 |
|||
ON/ST |
1305+ |
TO-3 |
12000 |
||||
ON/ST |
1738+ |
TO-3 |
8529 |
科恒伟业!只做原装正品,假一赔十! |
|||
22+ |
NA |
3000 |
加我QQ或微信咨询更多详细信息, |
||||
N/A |
21+ |
TO-3 |
645 |
航宇科工半导体-央企合格优秀供方! |
|||
ST/意法 |
22+ |
N |
12800 |
本公司只做进口原装!优势低价出售! |
|||
ST |
23+ |
TO-3 |
8500 |
全新原装现货,公司只做原装。 |
|||
N/A |
23+ |
TO-3 |
66800 |
现货正品专供军研究院 |
|||
MOTO |
21+ |
TO-3 |
35210 |
一级代理/放心采购 |
MJ3001规格书下载地址
MJ3001参数引脚图相关
- nrf24l01
- nfc芯片
- NFC
- ne555定时器
- ne555
- nand闪存
- n74
- n100
- mxt
- murata
- mt7201
- mt6795
- msm8625q
- msm7227a
- MP4
- MP3
- mos晶体管
- mos管
- MOSFET
- molex连接器
- MJ4031
- MJ4030
- MJ400
- MJ3773
- MJ3772
- MJ3771
- MJ3738
- MJ-372
- MJ3701
- MJ3585
- MJ3584
- MJ3583
- MJ-3536
- MJ3521
- MJ3520
- MJ-3502
- MJ3480
- MJ3430
- MJ3401
- MJ3281A
- MJ3260
- MJ3248
- MJ3238
- MJ3202
- MJ3201
- MJ3101
- MJ3055
- MJ3042
- MJ3041
- MJ3040
- MJ3030
- MJ3029
- MJ3028
- MJ3027
- MJ3026
- MJ3000
- MJ2955G
- MJ2955A
- MJ2955
- MJ2941
- MJ2940
- MJ2901
- MJ2841
- MJ2840
- MJ2812
- MJ2801
- MJ-2508
- MJ-2507
- MJ-2505
- MJ-2502
- MJ2501
- MJ2500
- MJ2400
- MJ2268
- MJ2267
- MJ2254
- MJ2253
- MJ2252
- MJ2251
- MJ2250
- MJ2249
- MJ22050
- MJ2194
- MJ21294
- MJ21196
- MJ21195
- MJ21194
- MJ1800
- MJ16018
- MJ16006A
MJ3001数据表相关新闻
MIXA60W1200TED IGBT 模块
MIXA60W1200TEDIGBT模块Six-PackXPTIGBT
2023-2-23MIXA30W1200TED IGBT 模块
MIXA30W1200TEDIGBT模块Six-PackXPTIGBT
2023-2-23MJD32CT4G
MJD32CT4G,全新.当天发货或门市自取,如需了解更多产品信息联系我们.零七五五.八二七三二二九一企鹅:一一七四零五二三五三,V:八七六八零五五八.
2021-7-1MJD127T4 ON原厂授权经销商
进口原装,国产代理,海量库存,产品齐全,货源渠道百分百正品
2020-6-18MJ11016
MJ11016,全新原装当天发货或门市自取0755-82732291.
2019-12-13mjd31ct4g亚太地区代理商,绝对优势!!
深圳市拓亿芯电子正品销售mjd31ct4g
2019-11-1
DdatasheetPDF页码索引
- P1
- P2
- P3
- P4
- P5
- P6
- P7
- P8
- P9
- P10
- P11
- P12
- P13
- P14
- P15
- P16
- P17
- P18
- P19
- P20
- P21
- P22
- P23
- P24
- P25
- P26
- P27
- P28
- P29
- P30
- P31
- P32
- P33
- P34
- P35
- P36
- P37
- P38
- P39
- P40
- P41
- P42
- P43
- P44
- P45
- P46
- P47
- P48
- P49
- P50
- P51
- P52
- P53
- P54
- P55
- P56
- P57
- P58
- P59
- P60
- P61
- P62
- P63
- P64
- P65
- P66
- P67
- P68
- P69
- P70
- P71
- P72
- P73
- P74
- P75
- P76
- P77
- P78
- P79
- P80