Power Transistors

Power Transistors TO-3 Case (Continued)

Silicon complementary trasistors power darlington

Power Transistors TO-3 Case (Continued)

10 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 60.80 VOLTS 150 WATTS

Medium-Power Complementary Silicon Transistors . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain — hFE = 4000 (Typ) @ IC = 5.0 Adc • Monolithic Construction with Built–in Base–Emitter Shunt Resistors

DARLINGTON POWER TRANSISTOR COMPLEMENTARY SILICON

Medium-Power Complementary Silicon Transistors . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain — hFE = 4000 (Typ) @ IC = 5.0 Adc • Monolithic Construction with Built–in Base–Emitter Shunt Resistors

Darlington Power Transistor

Description The is a silicon epitaxial-base NPN power transistors in monolithic Darlington configuration and are mounted in JEDEC TO-3 metal case. They are intended for use in power linear and switching applications.

COMPLEMENTARY POWER DARLINGTONS

COMPLEMENTARY POWER DARLINGTONS The MJ2500, and MJ2501 are silicon epitaxial-base PNP power transistors in monolithic Darlington configuration and are mounted in Jedec TO-3 metal case. They are intented for use in power linear and switching applications. The complementary NPN types are the MJ30

COMPLEMENTARY POWER DARLINGTONS

COMPLEMENTARY POWER DARLINGTONS The MJ2500, and MJ2501 are silicon epitaxial-base PNP power transistors in monolithic Darlington configuration and are mounted in Jedec TO-3 metal case. They are intented for use in power linear and switching applications. The complementary NPN types are the MJ30

10 Ampere Darlington Power Transistors Complementary Silicon

[multicomp] Features: • Medium-power complementary Silicon Transistors for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain hFE = 1000 (Typical) at IC = 5.0A. • Monolithic construction with built Base-Emitter Shunt Resistors.

Silicon NPN Power Transistors

DESCRIPTION • With TO-3 package • DARLINGTON • High DC current gain • Complement to type MJ2500/2501 APPLICATIONS • For use as output devices in complementary general purpose amplifier applications

Medium-Power Complementary Silicon Transistors

Medium-Power Complementary Silicon Transistors . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain — hpE = 4000 (Typ) @ IQ = 5.0 Adc • Monolithic Construction with Built-in Base-Emitter Shunt Resistors

Silicon NPN Power Transistors

DESCRIPTION • With TO-3 package • DARLINGTON • High DC current gain • Complement to type MJ2500/2501 APPLICATIONS • For use as output devices in complementary general purpose amplifier applications

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

DESCRIPTION The MJ2501 is a Silicon Epitaxial-Base PNP power transistors in monolithic Darlington configuration, mounted in Jedec TO-3 meta case. It is intented for use in power linear and switching applications. ■ STMicroelectronics PREFERRED SALESTYPES ■ COMPLEMENTARY PNP - NPN DEVI

封装/外壳：TO-204AA，TO-3 包装：剪切带（CT）带盒（TB） 描述：TRANS NPN DARL 80V 10A TO3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

High Voltage / High Power / Small Signal Transistors

Transistor

Silicon NPN Power Transistors

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COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

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Darlington Power Transistor

Description The is a silicon epitaxial-base NPN power transistors in monolithic Darlington configuration and are mounted in JEDEC TO-3 metal case. They are intended for use in power linear and switching applications.

MICROWAVE POWER TRANSISTORS

The RF Line Microwave Power Transistors . . . designed primarily for large–signal output and driver amplifier stages in the 1.5 to 3.0 GHz frequency range. • Designed for Class B or C, Common Base Linear Power Amplifiers • Specified 28 Volt, 3.0 GHz Characteristics: Output Power — 1.0 to 5

Light Emitting Diode Miniature, Diffused Red

Description: The NTE3001 is a diffused Gallium Arsenide Phosphide diode mounted in a two lead epoxy package with a red diffused lens. On forward bias, this device emits a spectrally narrow band of visible light which peaks at 660nm. The NTE3001 is intended for high volume indicator light app

SDH/SONET STM4/OC12 laser drivers

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