Silicon NPN Power Transistors

DESCRIPTION • With TO-3 package • DARLINGTON • High DC current gain • Complement to type MJ2500/2501 APPLICATIONS • For use as output devices in complementary general purpose amplifier applications

COMPLEMENTARY POWER DARLINGTONS

COMPLEMENTARY POWER DARLINGTONS The MJ2500, and MJ2501 are silicon epitaxial-base PNP power transistors in monolithic Darlington configuration and are mounted in Jedec TO-3 metal case. They are intented for use in power linear and switching applications. The complementary NPN types are the MJ30

Silicon NPN Power Transistors

DESCRIPTION • With TO-3 package • DARLINGTON • High DC current gain • Complement to type MJ2500/2501 APPLICATIONS • For use as output devices in complementary general purpose amplifier applications

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

DESCRIPTION The MJ2501 is a Silicon Epitaxial-Base PNP power transistors in monolithic Darlington configuration, mounted in Jedec TO-3 meta case. It is intented for use in power linear and switching applications. ■ STMicroelectronics PREFERRED SALESTYPES ■ COMPLEMENTARY PNP - NPN DEVI

10 Ampere Darlington Power Transistors Complementary Silicon

[multicomp] Features: • Medium-power complementary Silicon Transistors for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain hFE = 1000 (Typical) at IC = 5.0A. • Monolithic construction with built Base-Emitter Shunt Resistors.

Medium-Power Complementary Silicon Transistors

Medium-Power Complementary Silicon Transistors . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain — hpE = 4000 (Typ) @ IQ = 5.0 Adc • Monolithic Construction with Built-in Base-Emitter Shunt Resistors

COMPLEMENTARY POWER DARLINGTONS

COMPLEMENTARY POWER DARLINGTONS The MJ2500, and MJ2501 are silicon epitaxial-base PNP power transistors in monolithic Darlington configuration and are mounted in Jedec TO-3 metal case. They are intented for use in power linear and switching applications. The complementary NPN types are the MJ30

Silicon complementary trasistors power darlington

Power Transistors TO-3 Case (Continued)

10 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 60.80 VOLTS 150 WATTS

Medium-Power Complementary Silicon Transistors . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain — hFE = 4000 (Typ) @ IC = 5.0 Adc • Monolithic Construction with Built–in Base–Emitter Shunt Resistors

DARLINGTON POWER TRANSISTOR COMPLEMENTARY SILICON

Medium-Power Complementary Silicon Transistors . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain — hFE = 4000 (Typ) @ IC = 5.0 Adc • Monolithic Construction with Built–in Base–Emitter Shunt Resistors

Power Transistors

Power Transistors TO-3 Case (Continued)

Darlington Power Transistor

Description The is a silicon epitaxial-base NPN power transistors in monolithic Darlington configuration and are mounted in JEDEC TO-3 metal case. They are intended for use in power linear and switching applications.

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

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Silicon NPN Power Transistors

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封装/外壳：TO-204AA，TO-3 包装：剪切带（CT）带盒（TB） 描述：TRANS NPN DARL 80V 10A TO3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

High Voltage / High Power / Small Signal Transistors

Transistor

Darlington Power Transistor

Description The is a silicon epitaxial-base NPN power transistors in monolithic Darlington configuration and are mounted in JEDEC TO-3 metal case. They are intended for use in power linear and switching applications.

MICROWAVE POWER TRANSISTORS

The RF Line Microwave Power Transistors . . . designed primarily for large–signal output and driver amplifier stages in the 1.5 to 3.0 GHz frequency range. • Designed for Class B or C, Common Base Linear Power Amplifiers • Specified 28 Volt, 3.0 GHz Characteristics: Output Power — 1.0 to 5

Light Emitting Diode Miniature, Diffused Red

Description: The NTE3001 is a diffused Gallium Arsenide Phosphide diode mounted in a two lead epoxy package with a red diffused lens. On forward bias, this device emits a spectrally narrow band of visible light which peaks at 660nm. The NTE3001 is intended for high volume indicator light app

SDH/SONET STM4/OC12 laser drivers

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