10 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 60.80 VOLTS 150 WATTS

Medium-Power Complementary Silicon Transistors . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain — hFE = 4000 (Typ) @ IC = 5.0 Adc • Monolithic Construction with Built–in Base–Emitter Shunt Resistors

DARLINGTON POWER TRANSISTOR COMPLEMENTARY SILICON

Medium-Power Complementary Silicon Transistors . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain — hFE = 4000 (Typ) @ IC = 5.0 Adc • Monolithic Construction with Built–in Base–Emitter Shunt Resistors

Power Transistors

Power Transistors TO-3 Case (Continued)

Silicon NPN Power Transistors

DESCRIPTION • With TO-3 package • DARLINGTON • High DC current gain • Complement to type MJ2500/2501 APPLICATIONS • For use as output devices in complementary general purpose amplifier applications

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

DESCRIPTION The MJ2501 is a Silicon Epitaxial-Base PNP power transistors in monolithic Darlington configuration, mounted in Jedec TO-3 meta case. It is intented for use in power linear and switching applications. ■ STMicroelectronics PREFERRED SALESTYPES ■ COMPLEMENTARY PNP - NPN DEVI

10 Ampere Darlington Power Transistors Complementary Silicon

[multicomp] Features: • Medium-power complementary Silicon Transistors for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain hFE = 1000 (Typical) at IC = 5.0A. • Monolithic construction with built Base-Emitter Shunt Resistors.

Medium-Power Complementary Silicon Transistors

Medium-Power Complementary Silicon Transistors . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain — hpE = 4000 (Typ) @ IQ = 5.0 Adc • Monolithic Construction with Built-in Base-Emitter Shunt Resistors

COMPLEMENTARY POWER DARLINGTONS

COMPLEMENTARY POWER DARLINGTONS The MJ2500, and MJ2501 are silicon epitaxial-base PNP power transistors in monolithic Darlington configuration and are mounted in Jedec TO-3 metal case. They are intented for use in power linear and switching applications. The complementary NPN types are the MJ30

Silicon NPN Power Transistors

DESCRIPTION • With TO-3 package • DARLINGTON • High DC current gain • Complement to type MJ2500/2501 APPLICATIONS • For use as output devices in complementary general purpose amplifier applications

COMPLEMENTARY POWER DARLINGTONS

COMPLEMENTARY POWER DARLINGTONS The MJ2500, and MJ2501 are silicon epitaxial-base PNP power transistors in monolithic Darlington configuration and are mounted in Jedec TO-3 metal case. They are intented for use in power linear and switching applications. The complementary NPN types are the MJ30

Silicon complementary trasistors power darlington

Power Transistors TO-3 Case (Continued)

Darlington Power Transistor

Description The is a silicon epitaxial-base NPN power transistors in monolithic Darlington configuration and are mounted in JEDEC TO-3 metal case. They are intended for use in power linear and switching applications.

封装/外壳：TO-204AA，TO-3 包装：剪切带（CT）带盒（TB） 描述：TRANS NPN DARL 80V 10A TO3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Silicon NPN Power Transistors

文件：119.97 Kbytes Page：3 Pages

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

文件：51.79 Kbytes Page：4 Pages

Darlington Power Transistor

Description The is a silicon epitaxial-base NPN power transistors in monolithic Darlington configuration and are mounted in JEDEC TO-3 metal case. They are intended for use in power linear and switching applications.

MICROWAVE CW BIPOLAR

[ACRIAN INC] GENERAL DESCRIPTION The 3001 is a common base transistor capable of providing 1 Watts of CW RF output power at 3000 MHz. This hermetically sealed transistor is specifically designed telemetry and telecommunications applications. It uses gold metalization and diffused ballasting to p

1 Watt - 28 Volts, Class C Microwave 3000 MHz

GENERAL DESCRIPTION The 3001 is a COMMON BASE transistor capable of providing 1 Watts Class C, RF output power at 3000 MHz. Gold metalization and diffused ballasting are used to provide high reliability and supreme ruggedness. The transistor uses a fully hermetic High Temperature Solder Sealed pa

KK Maxi-3.96mm & 5.08mm Modular Interconnection System

KEY FEATURES ■ Available on 3.96 mm and 5.08 mm center spacings ■ Polarisation via insertable keys and pegs ■ Allows connections anywhere on the board ■ Double cantilever style terminal ■ Selective gold plating options ■ End-to-end stacking capabilities ■ Locking ramp for improved mated ret

RF Manual 16th edition

KNOB

文件：80.14 Kbytes Page：1 Pages