The RF Line

Microwave Power Transistors

. . . designed primarily for large–signal output and driver amplifier stages in the 1.5 to 3.0 GHz frequency range.

• Designed for Class B or C, Common Base Linear Power Amplifiers

• Specified 28 Volt, 3.0 GHz Characteristics:

Output Power — 1.0 to 5.0 Watts

Power Gain — 5.0 to 7.0 dB Min

Collector Efficiency — 30 Min

• Gold Metallization for Improved Reliability

• Diffused Ballast Resistors

• Circuit board photomaster available upon request by contacting

RF Tactical Marketing in Phoenix, AZ.