Silicon Complementary Transistors General Purpose Amplifier, Switch

Description: The NTE24 (NPN) and NTE25 (PNP) are complementary silicon transistors in a TO237 type package designed for general purpose medium power amplifier and switching circuits that require collector currents to 1A. Features: • High Collector–Emitter Breakdown Voltage: VCEO = 80V

Complementary Transistors

Silicon Complementary Transistors Darlington Power Amplifier

Description: The NTE249 (NPN) and NTE250 (PNP) are silicon complementary Darlington transistors in a TO3 type case designed for use as output devices in complementary general purpose amplifier applications. Features: • High DC Current Gain: hFE = 3500 Typ @ IC = 10A • Monolithic Cons

Silicon Complementary Transistors High Voltage for Video Output

Features: • High Breakdown Voltage • Excellent High Frequency Characteristics Applications: • High Definition CRT Display • Color TV Chroma Output, High Breakdown Voltage Drivers

Silicon Complementary Transistors High Voltage for Video Output

Features: • High Breakdown Voltage • Excellent High Frequency Characteristics Applications: • High Definition CRT Display • Color TV Chroma Output, High Breakdown Voltage Drivers

Silicon NPN Transistor High Gain Switch

Features: • High DC Current Gain • High Current Capacity • Low Collector–Emitter Saturation Voltage • High Emitter–Base Voltage Applications: • AF Amplifier • Various Driver

Silicon NPN Transistor High Gain Audio Amplifier

Features: • Large Current Capacity (IC = 2A) • Adoption of MBIT Process • High DC Current Gain: hFE = 800 to 3200 • Low Collector–Emitter Saturation Voltage: VCE(sat)

Silicon NPN Transistor Low Frequency, General Purpose Amp

Features: ● High Current Capacity ● High DC Current Gain ● Low Collector Emitter Saturation Voltage ● High Emitter Base Breakdown Voltage Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . .. . . . . .

Silicon NPN Transistor High Frequency Video Driver

Description: The NTE2506 is a silicon NPN epitaxial transistor in a TO126 type package designed for use in the cascode stage of the driver for high–resolution color graphics monitors. Features: High Breakdown Voltage Low Output Capacitance

Silicon Complementary Transistors Video Output for HDTV

Features: • High Gain Bandwidth Product: fT = 500MHz • High Breakdown Voltage: VCEO = 120V Min • Low Reverse Transfer Capacitance and Excellent HF Response Applications: • High–Definition CRT Display Video Output • Wide–Band Amp

Silicon Complementary Transistors Video Output for HDTV

Features: • High Gain Bandwidth Product: fT = 500MHz • High Breakdown Voltage: VCEO = 120V Min • Low Reverse Transfer Capacitance and Excellent HF Response Applications: • High–Definition CRT Display Video Output • Wide–Band Amp

Silicon Complementary Transistors Darlington Power Amplifier

Description: The NTE251 (NPN) and NTE252 (PNP) are silicon complementary Darlington transistors in a TO3 type case designed for general–purpose amplifier and low–frequency switching applications. Features: • High DC Current Gain @ IC = 10A: hFE = 2400 Typ (NTE251) hFE = 4000

Silicon NPNTransistor High Frequency Video Output

Features: • High Gain Bandwidth Product: fT = 2GHz • High Current Capacity: IC = 500mA Applications: • High–Definition CRT Display Video Output • Wide–Band Amp

Silicon Complementary Transistors High Frequency Video Output for HDTV

Features: • High Gain Bandwidth Product: fT = 800MHz Typ. • Low Reverse Transfer Capacitance and Excellent HF Response: NTE2511: Cre = 2.9pF NTE2512: Cre = 4.6pF Applications: • Very High–Definition CRT Display • Video Output • Color TV Chroma Output • Wide–Band

Silicon Complementary Transistors High Frequency Video Output for HDTV

Features: • High Gain Bandwidth Product: fT = 800MHz Typ. • Low Reverse Transfer Capacitance and Excellent HF Response: NTE2511: Cre = 2.9pF NTE2512: Cre = 4.6pF Applications: • Very High–Definition CRT Display • Video Output • Color TV Chroma Output • Wide–Band

Silicon Complementary Transistors High Current Switch

Features: • Low Collector Emitter Saturation Voltage • High Gain–Bandwidth Product • Excellent Linearity of hFE • Fast Switching Time Applications: • Display Drivers • High Speed Inverters • Converters

Silicon Complementary Transistors High Current Switch

Features: • Low Collector Emitter Saturation Voltage • High Gain–Bandwidth Product • Excellent Linearity of hFE • Fast Switching Time Applications: • Display Drivers • High Speed Inverters • Converters

Silicon Complementary Transistors High Current Switch

Features: Low Collector Emitter Saturation Voltage High Gain–Bandwidth Product Excellent Linearity of hFE Fast Switching Time Applications: Display Drivers High Speed Inverters Converters

Silicon Complementary Transistors High Current Switch

Features: Low Collector Emitter Saturation Voltage High Gain–Bandwidth Product Excellent Linearity of hFE Fast Switching Time Applications: Display Drivers High Speed Inverters Converters

Silicon Complementary Transistors High Current Switch

Features: • Low Saturation Voltage • High Current Capacity and Wide ASO Applications: • Voltage Regulators • Relay Drivers • Lamp Drivers

Silicon Complementary Transistors High Current Switch

Features: • Low Saturation Voltage • High Current Capacity and Wide ASO Applications: • Voltage Regulators • Relay Drivers • Lamp Drivers

Silicon Complementary Transistors High Voltage Driver

Features: • High Breakdown Voltage • Large Current Capacity • Isolated Package Applications: • Color TV Audio Output • Converters • Inverters

Silicon Complementary Transistors Darlington Power Amplifier

Description: The NTE251 (NPN) and NTE252 (PNP) are silicon complementary Darlington transistors in a TO3 type case designed for general–purpose amplifier and low–frequency switching applications. Features: • High DC Current Gain @ IC = 10A: hFE = 2400 Typ (NTE251) hFE = 4000

Silicon Complementary Transistors High Voltage Driver

Features: • High Breakdown Voltage • Large Current Capacity • Isolated Package Applications: • Color TV Audio Output • Converters • Inverters

Silicon NPN Transistor Video Output for HDTV

Features: • High Gain Bandwidth Product: fT = 400MHz Typ • High Breakdown Voltage: VCEO ≥ 250V Min • High Current • Low Reverse Transfer Capacitance and Excellent HF Response

Silicon Complementary Transistors High Speed Switch

Features: High Current Capacity High Collector–Emitter Saturation Voltage

Silicon Complementary Transistors High Speed Switch

Features: High Current Capacity High Collector–Emitter Saturation Voltage

Silicon Complementary Transistors High Current Switch

Features: • Low Collector–Emitter Saturation Voltage • High Current and High fT • Excellent Linearity of hFE • Fast Switching Time

Silicon Complementary Transistors High Current Switch

Features: • Low Collector–Emitter Saturation Voltage • High Current and High fT • Excellent Linearity of hFE • Fast Switching Time

Silicon Complementary Transistors High Current Switch

Features: • Low Collector–Emitter Saturation Voltage • High Current and High fT • Excellent Linearity of hFE • Fast Switching Time

Silicon Complementary Transistors High Current Switch

Features: • Low Collector–Emitter Saturation Voltage • High Current and High fT • Excellent Linearity of hFE • Fast Switching Time

Silicon Complementary Transistors High Voltage Switch

Features: • High Voltage and High Current Capacity • Fast Switching Time

Silicon Complementary Transistors High Voltage Switch

Features: • High Voltage and High Current Capacity • Fast Switching Time

Silicon Complementary Transistors Darlington Power Amplifier

Description: The NTE253 (NPN) and NTE254 (PNP) are silicon complementary Darlington transistors in a TO126 type case designed for general–purpose amplifier and low–speed switching applications. Features: • High DC Current Gain: hFE = 2000 (Typ) @ IC = 2A • Monolithic Construction wit

Silicon Complementary Transistors High Voltage Driver

Features: • High Current Capacity: IC = 2A • High Breakdown Voltage: VCEO = 400V Min

Silicon Complementary Transistors High Voltage Driver

Features: • High Current Capacity: IC = 2A • High Breakdown Voltage: VCEO = 400V Min

Silicon NPN Transistor High-Definition Color Display Horizontal Deflection Output

Features: • High Speed: tf = 100ns Typ • High Breakdown Voltage: VCBO = 1500V • High Reliability

Silicon Complementary Transistors High Current Switch

Features: • Low Collector Emitter Saturation Voltage Applications: • Relay Drivers • High Speed Inverters • Converters

Silicon Complementary Transistors High Current Switch

Features: • Low Collector Emitter Saturation Voltage Applications: • Relay Drivers • High Speed Inverters • Converters

Silicon Complementary Transistors High Current Switch

Features: • High Current Capacity • Wide ASO Range • Low Saturation Voltage Applications: • Motor Drivers • Relay Drivers • Converters

Silicon Complementary Transistors High Current Switch

Features: • High Current Capacity • Wide ASO Range • Low Saturation Voltage Applications: • Motor Drivers • Relay Drivers • Converters

Silicon NPN Transistor High Voltage, High Current Switch

Features: • High Breakdown Voltage and Reliability • Fast Switching Speed • Wide ASO

Silicon NPN Transistor High Voltage, High Speed Switch

Features: ● High Breakdown Voltage and Reliability ● Fast Switching Speed ● Wide ASO

Silicon Complementary Transistors Darlington Power Amplifier

Description: The NTE253 (NPN) and NTE254 (PNP) are silicon complementary Darlington transistors in a TO126 type case designed for general–purpose amplifier and low–speed switching applications. Features: • High DC Current Gain: hFE = 2000 (Typ) @ IC = 2A • Monolithic Construction wit

Silicon NPN Transistor Darlington, High Voltage Switch

Features: • High DC Current Gain: hFE = 600 Min (VCE = 2V, IC = 2A) • Monolithic Construction w/Built–In Base–Emitter Shunt Resistor

Silicon NPN Transistor Darlington Driver

Features: • Darlington Conncetion • High DC Current Gain • Low Dependence of DC Current Gain on Temperature Applications: • Motor Driver • Printer Hammer Driver • Relay Driver

Silicon Complementary Transistors Darlington, High Speed Driver

Features: • High Speed Switching • Wide ASO Range • High Gain Bandwidth Product

Silicon Complementary Transistors Darlington, High Speed Driver

Features: • High Speed Switching • Wide ASO Range • High Gain Bandwidth Product

Silicon Complementary Transistors Darlington Driver

Features: • High DC Current Gain • High Current Capacity and Wide ASO • Low Saturation Voltage Applications: • Motor Drivers • Printer Hammer Drivers • Relay Drivers • Voltage Regulator Control

Silicon Complementary Transistors Darlington Driver

Features: • High DC Current Gain • High Current Capacity and Wide ASO • Low Saturation Voltage Applications: • Motor Drivers • Printer Hammer Drivers • Relay Drivers • Voltage Regulator Control

Silicon Complementary Transistors Darlington Driver, Switch

Features: • High DC Current Gain • Low Saturation Voltage • High Current Capacity and Wide ASO • Isolated TO220 Type Package Applications: • Motor Drivers • Printer Hammer Drivers • Relay Drivers • Voltage Regulator Control

Silicon Complementary Transistors Darlington Driver, Switch

Features: • High DC Current Gain • Low Saturation Voltage • High Current Capacity and Wide ASO • Isolated TO220 Type Package Applications: • Motor Drivers • Printer Hammer Drivers • Relay Drivers • Voltage Regulator Control

Silicon NPN Transistor Darlington, Motor Driver, Switch

Features: • High DC Current Gain • High Breakdown Voltage • Isolated TO220 Type Package

Silicon Complementary Transistors Darlington Driver

Applications: • Industrial Equipment • Printers • Typewriters • Sewing Machines • Recorders • Computers • Igniters • Car Coolers • Projectors • Players • Stereos • Home Appliances • Audio Equipment • ECRs

Silicon Complementary Transistors Darlington Driver

Applications: • Industrial Equipment • Printers • Typewriters • Sewing Machines • Recorders • Computers • Igniters • Car Coolers • Projectors • Players • Stereos • Home Appliances • Audio Equipment • ECRs

Silicon NPN Transistor Darlington, Motor/Relay Driver

Features: • High DC Current Gain • High Current Capacity • Wide ASO Range Applications: • Motor Drivers • Printer Hammer Drivers • Relay Drivers • Voltage Regulator Control

Silicon NPN Transistor Darlington, High Voltage Switch, Power Amp

Silicon NPN Transistor Darlington, High Voltage Switch, Power Amp

Silicon NPN Transistor Darlington, High Voltage, High Speed Switch w/ Damper Diode

Features: • High Reliability • High Collector–Base Breakdown Voltage • On–Chip Damper Diode Applications: • High–Voltage, High–Power Switching • Induction Cookers

Silicon Complementary Transistors Darlington, Motor/Relay Driver

Absolute Maximum Ratings: Collector–Base Voltage, VCBO . . . . . . . . .. . . . . . . 120V Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . 120V Emitter–Base Voltage, VEBO . . . . . . . . . .. . . . . . . . . . 6V Collector Current, IC Continuous . . . . . . . .

Silicon NPN Transistor Darlington w/Damper Diode

Description: The NTE256 is a silicon epitaxial planer NPN Darlington transistor in a TO218 type package with an integrated Base–Emitter speed–up diode. This device is particularly suitable for use as an output stage in high power, fast switching applications.

4096-word X 8-bit UV Erasable and Programmable Read Only Memory

4096 x 8-BIT UV ERASABLE PROM

32,768 BIT ERASABLE PROGRAMMABLE READ ONLY MEMORIES

32,768 BIT ERASABLE PROGRAMMABLE READ ONLY MEMORIES

32,768 BIT ERASABLE PROGRAMMABLE READ ONLY MEMORIES