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NTE25价格
参考价格:¥16.4434
型号:NTE2502 品牌:NTE Electronics 备注:这里有NTE25多少钱,2024年最近7天走势,今日出价,今日竞价,NTE25批发/采购报价,NTE25行情走势销售排行榜,NTE25报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
NTE25 | Silicon Complementary Transistors General Purpose Amplifier, Switch Description: TheNTE24(NPN)andNTE25(PNP)arecomplementarysilicontransistorsinaTO237typepackagedesignedforgeneralpurposemediumpoweramplifierandswitchingcircuitsthatrequirecollectorcurrentsto1A. Features: •HighCollector–EmitterBreakdownVoltage:VCEO=80V | NTE NTE Electronics, Inc | ||
Silicon Complementary Transistors Darlington Power Amplifier Description: TheNTE249(NPN)andNTE250(PNP)aresiliconcomplementaryDarlingtontransistorsinaTO3typecasedesignedforuseasoutputdevicesincomplementarygeneralpurposeamplifierapplications. Features: •HighDCCurrentGain:hFE=3500Typ@IC=10A •MonolithicCons | NTE NTE Electronics, Inc | |||
Silicon Complementary Transistors High Voltage for Video Output Features: •HighBreakdownVoltage •ExcellentHighFrequencyCharacteristics Applications: •HighDefinitionCRTDisplay •ColorTVChromaOutput,HighBreakdownVoltageDrivers | NTE NTE Electronics, Inc | |||
Silicon Complementary Transistors High Voltage for Video Output Features: •HighBreakdownVoltage •ExcellentHighFrequencyCharacteristics Applications: •HighDefinitionCRTDisplay •ColorTVChromaOutput,HighBreakdownVoltageDrivers | NTE NTE Electronics, Inc | |||
Silicon NPN Transistor High Gain Switch Features: •HighDCCurrentGain •HighCurrentCapacity •LowCollector–EmitterSaturationVoltage •HighEmitter–BaseVoltage Applications: •AFAmplifier •VariousDriver | NTE NTE Electronics, Inc | |||
Silicon NPN Transistor High Gain Audio Amplifier Features: •LargeCurrentCapacity(IC=2A) •AdoptionofMBITProcess •HighDCCurrentGain:hFE=800to3200 •LowCollector–EmitterSaturationVoltage:VCE(sat) | NTE NTE Electronics, Inc | |||
Silicon NPN Transistor Low Frequency, General Purpose Amp Features: ●HighCurrentCapacity ●HighDCCurrentGain ●LowCollectorEmitterSaturationVoltage ●HighEmitterBaseBreakdownVoltage AbsoluteMaximumRatings:(TA=+25°Cunlessotherwisespecified) Collector–BaseVoltage,VCBO....................... | NTE NTE Electronics, Inc | |||
Silicon NPN Transistor High Frequency Video Driver Description: TheNTE2506isasiliconNPNepitaxialtransistorinaTO126typepackagedesignedforuseinthecascodestageofthedriverforhigh–resolutioncolorgraphicsmonitors. Features: HighBreakdownVoltage LowOutputCapacitance | NTE NTE Electronics, Inc | |||
Silicon Complementary Transistors Video Output for HDTV Features: •HighGainBandwidthProduct:fT=500MHz •HighBreakdownVoltage:VCEO=120VMin •LowReverseTransferCapacitanceandExcellentHFResponse Applications: •High–DefinitionCRTDisplayVideoOutput •Wide–BandAmp | NTE NTE Electronics, Inc | |||
Silicon Complementary Transistors Video Output for HDTV Features: •HighGainBandwidthProduct:fT=500MHz •HighBreakdownVoltage:VCEO=120VMin •LowReverseTransferCapacitanceandExcellentHFResponse Applications: •High–DefinitionCRTDisplayVideoOutput •Wide–BandAmp | NTE NTE Electronics, Inc | |||
Silicon Complementary Transistors Darlington Power Amplifier Description: TheNTE251(NPN)andNTE252(PNP)aresiliconcomplementaryDarlingtontransistorsinaTO3typecasedesignedforgeneral–purposeamplifierandlow–frequencyswitchingapplications. Features: •HighDCCurrentGain@IC=10A: hFE=2400Typ(NTE251) hFE=4000 | NTE NTE Electronics, Inc | |||
Silicon NPNTransistor High Frequency Video Output Features: •HighGainBandwidthProduct:fT=2GHz •HighCurrentCapacity:IC=500mA Applications: •High–DefinitionCRTDisplayVideoOutput •Wide–BandAmp | NTE NTE Electronics, Inc | |||
Silicon Complementary Transistors High Frequency Video Output for HDTV Features: •HighGainBandwidthProduct:fT=800MHzTyp. •LowReverseTransferCapacitanceandExcellentHFResponse: NTE2511:Cre=2.9pF NTE2512:Cre=4.6pF Applications: •VeryHigh–DefinitionCRTDisplay •VideoOutput •ColorTVChromaOutput •Wide–Band | NTE NTE Electronics, Inc | |||
Silicon Complementary Transistors High Frequency Video Output for HDTV Features: •HighGainBandwidthProduct:fT=800MHzTyp. •LowReverseTransferCapacitanceandExcellentHFResponse: NTE2511:Cre=2.9pF NTE2512:Cre=4.6pF Applications: •VeryHigh–DefinitionCRTDisplay •VideoOutput •ColorTVChromaOutput •Wide–Band | NTE NTE Electronics, Inc | |||
Silicon Complementary Transistors High Current Switch Features: •LowCollectorEmitterSaturationVoltage •HighGain–BandwidthProduct •ExcellentLinearityofhFE •FastSwitchingTime Applications: •DisplayDrivers •HighSpeedInverters •Converters | NTE NTE Electronics, Inc | |||
Silicon Complementary Transistors High Current Switch Features: •LowCollectorEmitterSaturationVoltage •HighGain–BandwidthProduct •ExcellentLinearityofhFE •FastSwitchingTime Applications: •DisplayDrivers •HighSpeedInverters •Converters | NTE NTE Electronics, Inc | |||
Silicon Complementary Transistors High Current Switch Features: LowCollectorEmitterSaturationVoltage HighGain–BandwidthProduct ExcellentLinearityofhFE FastSwitchingTime Applications: DisplayDrivers HighSpeedInverters Converters | NTE NTE Electronics, Inc | |||
Silicon Complementary Transistors High Current Switch Features: LowCollectorEmitterSaturationVoltage HighGain–BandwidthProduct ExcellentLinearityofhFE FastSwitchingTime Applications: DisplayDrivers HighSpeedInverters Converters | NTE NTE Electronics, Inc | |||
Silicon Complementary Transistors High Current Switch Features: •LowSaturationVoltage •HighCurrentCapacityandWideASO Applications: •VoltageRegulators •RelayDrivers •LampDrivers | NTE NTE Electronics, Inc | |||
Silicon Complementary Transistors High Current Switch Features: •LowSaturationVoltage •HighCurrentCapacityandWideASO Applications: •VoltageRegulators •RelayDrivers •LampDrivers | NTE NTE Electronics, Inc | |||
Silicon Complementary Transistors High Voltage Driver Features: •HighBreakdownVoltage •LargeCurrentCapacity •IsolatedPackage Applications: •ColorTVAudioOutput •Converters •Inverters | NTE NTE Electronics, Inc | |||
Silicon Complementary Transistors Darlington Power Amplifier Description: TheNTE251(NPN)andNTE252(PNP)aresiliconcomplementaryDarlingtontransistorsinaTO3typecasedesignedforgeneral–purposeamplifierandlow–frequencyswitchingapplications. Features: •HighDCCurrentGain@IC=10A: hFE=2400Typ(NTE251) hFE=4000 | NTE NTE Electronics, Inc | |||
Silicon Complementary Transistors High Voltage Driver Features: •HighBreakdownVoltage •LargeCurrentCapacity •IsolatedPackage Applications: •ColorTVAudioOutput •Converters •Inverters | NTE NTE Electronics, Inc | |||
Silicon NPN Transistor Video Output for HDTV Features: •HighGainBandwidthProduct:fT=400MHzTyp •HighBreakdownVoltage:VCEO≥250VMin •HighCurrent •LowReverseTransferCapacitanceandExcellentHFResponse | NTE NTE Electronics, Inc | |||
Silicon Complementary Transistors High Speed Switch Features: HighCurrentCapacity HighCollector–EmitterSaturationVoltage | NTE NTE Electronics, Inc | |||
Silicon Complementary Transistors High Speed Switch Features: HighCurrentCapacity HighCollector–EmitterSaturationVoltage | NTE NTE Electronics, Inc | |||
Silicon Complementary Transistors High Current Switch Features: •LowCollector–EmitterSaturationVoltage •HighCurrentandHighfT •ExcellentLinearityofhFE •FastSwitchingTime | NTE NTE Electronics, Inc | |||
Silicon Complementary Transistors High Current Switch Features: •LowCollector–EmitterSaturationVoltage •HighCurrentandHighfT •ExcellentLinearityofhFE •FastSwitchingTime | NTE NTE Electronics, Inc | |||
Silicon Complementary Transistors High Current Switch Features: •LowCollector–EmitterSaturationVoltage •HighCurrentandHighfT •ExcellentLinearityofhFE •FastSwitchingTime | NTE NTE Electronics, Inc | |||
Silicon Complementary Transistors High Current Switch Features: •LowCollector–EmitterSaturationVoltage •HighCurrentandHighfT •ExcellentLinearityofhFE •FastSwitchingTime | NTE NTE Electronics, Inc | |||
Silicon Complementary Transistors High Voltage Switch Features: •HighVoltageandHighCurrentCapacity •FastSwitchingTime | NTE NTE Electronics, Inc | |||
Silicon Complementary Transistors High Voltage Switch Features: •HighVoltageandHighCurrentCapacity •FastSwitchingTime | NTE NTE Electronics, Inc | |||
Silicon Complementary Transistors Darlington Power Amplifier Description: TheNTE253(NPN)andNTE254(PNP)aresiliconcomplementaryDarlingtontransistorsinaTO126typecasedesignedforgeneral–purposeamplifierandlow–speedswitchingapplications. Features: •HighDCCurrentGain:hFE=2000(Typ)@IC=2A •MonolithicConstructionwit | NTE NTE Electronics, Inc | |||
Silicon Complementary Transistors High Voltage Driver Features: •HighCurrentCapacity:IC=2A •HighBreakdownVoltage:VCEO=400VMin | NTE NTE Electronics, Inc | |||
Silicon Complementary Transistors High Voltage Driver Features: •HighCurrentCapacity:IC=2A •HighBreakdownVoltage:VCEO=400VMin | NTE NTE Electronics, Inc | |||
Silicon NPN Transistor High-Definition Color Display Horizontal Deflection Output Features: •HighSpeed:tf=100nsTyp •HighBreakdownVoltage:VCBO=1500V •HighReliability | NTE NTE Electronics, Inc | |||
Silicon Complementary Transistors High Current Switch Features: •LowCollectorEmitterSaturationVoltage Applications: •RelayDrivers •HighSpeedInverters •Converters | NTE NTE Electronics, Inc | |||
Silicon Complementary Transistors High Current Switch Features: •LowCollectorEmitterSaturationVoltage Applications: •RelayDrivers •HighSpeedInverters •Converters | NTE NTE Electronics, Inc | |||
Silicon Complementary Transistors High Current Switch Features: •HighCurrentCapacity •WideASORange •LowSaturationVoltage Applications: •MotorDrivers •RelayDrivers •Converters | NTE NTE Electronics, Inc | |||
Silicon Complementary Transistors High Current Switch Features: •HighCurrentCapacity •WideASORange •LowSaturationVoltage Applications: •MotorDrivers •RelayDrivers •Converters | NTE NTE Electronics, Inc | |||
Silicon NPN Transistor High Voltage, High Current Switch Features: •HighBreakdownVoltageandReliability •FastSwitchingSpeed •WideASO | NTE NTE Electronics, Inc | |||
Silicon NPN Transistor High Voltage, High Speed Switch Features: ●HighBreakdownVoltageandReliability ●FastSwitchingSpeed ●WideASO | NTE NTE Electronics, Inc | |||
Silicon Complementary Transistors Darlington Power Amplifier Description: TheNTE253(NPN)andNTE254(PNP)aresiliconcomplementaryDarlingtontransistorsinaTO126typecasedesignedforgeneral–purposeamplifierandlow–speedswitchingapplications. Features: •HighDCCurrentGain:hFE=2000(Typ)@IC=2A •MonolithicConstructionwit | NTE NTE Electronics, Inc | |||
Silicon NPN Transistor Darlington, High Voltage Switch Features: •HighDCCurrentGain:hFE=600Min(VCE=2V,IC=2A) •MonolithicConstructionw/Built–InBase–EmitterShuntResistor | NTE NTE Electronics, Inc | |||
Silicon NPN Transistor Darlington Driver Features: •DarlingtonConncetion •HighDCCurrentGain •LowDependenceofDCCurrentGainonTemperature Applications: •MotorDriver •PrinterHammerDriver •RelayDriver | NTE NTE Electronics, Inc | |||
Silicon Complementary Transistors Darlington, High Speed Driver Features: •HighSpeedSwitching •WideASORange •HighGainBandwidthProduct | NTE NTE Electronics, Inc | |||
Silicon Complementary Transistors Darlington, High Speed Driver Features: •HighSpeedSwitching •WideASORange •HighGainBandwidthProduct | NTE NTE Electronics, Inc | |||
Silicon Complementary Transistors Darlington Driver Features: •HighDCCurrentGain •HighCurrentCapacityandWideASO •LowSaturationVoltage Applications: •MotorDrivers •PrinterHammerDrivers •RelayDrivers •VoltageRegulatorControl | NTE NTE Electronics, Inc | |||
Silicon Complementary Transistors Darlington Driver Features: •HighDCCurrentGain •HighCurrentCapacityandWideASO •LowSaturationVoltage Applications: •MotorDrivers •PrinterHammerDrivers •RelayDrivers •VoltageRegulatorControl | NTE NTE Electronics, Inc | |||
Silicon Complementary Transistors Darlington Driver, Switch Features: •HighDCCurrentGain •LowSaturationVoltage •HighCurrentCapacityandWideASO •IsolatedTO220TypePackage Applications: •MotorDrivers •PrinterHammerDrivers •RelayDrivers •VoltageRegulatorControl | NTE NTE Electronics, Inc | |||
Silicon Complementary Transistors Darlington Driver, Switch Features: •HighDCCurrentGain •LowSaturationVoltage •HighCurrentCapacityandWideASO •IsolatedTO220TypePackage Applications: •MotorDrivers •PrinterHammerDrivers •RelayDrivers •VoltageRegulatorControl | NTE NTE Electronics, Inc | |||
Silicon NPN Transistor Darlington, Motor Driver, Switch Features: •HighDCCurrentGain •HighBreakdownVoltage •IsolatedTO220TypePackage | NTE NTE Electronics, Inc | |||
Silicon Complementary Transistors Darlington Driver Applications: •IndustrialEquipment •Printers •Typewriters •SewingMachines •Recorders •Computers •Igniters •CarCoolers •Projectors •Players •Stereos •HomeAppliances •AudioEquipment •ECRs | NTE NTE Electronics, Inc | |||
Silicon Complementary Transistors Darlington Driver Applications: •IndustrialEquipment •Printers •Typewriters •SewingMachines •Recorders •Computers •Igniters •CarCoolers •Projectors •Players •Stereos •HomeAppliances •AudioEquipment •ECRs | NTE NTE Electronics, Inc | |||
Silicon NPN Transistor Darlington, Motor/Relay Driver Features: •HighDCCurrentGain •HighCurrentCapacity •WideASORange Applications: •MotorDrivers •PrinterHammerDrivers •RelayDrivers •VoltageRegulatorControl | NTE NTE Electronics, Inc | |||
Silicon NPN Transistor Darlington, High Voltage Switch, Power Amp SiliconNPNTransistorDarlington,HighVoltageSwitch,PowerAmp | NTE NTE Electronics, Inc | |||
Silicon NPN Transistor Darlington, High Voltage, High Speed Switch w/ Damper Diode Features: •HighReliability •HighCollector–BaseBreakdownVoltage •On–ChipDamperDiode Applications: •High–Voltage,High–PowerSwitching •InductionCookers | NTE NTE Electronics, Inc | |||
Silicon Complementary Transistors Darlington, Motor/Relay Driver AbsoluteMaximumRatings: Collector–BaseVoltage,VCBO................120V Collector–EmitterVoltage,VCEO..............120V Emitter–BaseVoltage,VEBO....................6V CollectorCurrent,IC Continuous........ | NTE NTE Electronics, Inc | |||
Silicon NPN Transistor Darlington w/Damper Diode Description: TheNTE256isasiliconepitaxialplanerNPNDarlingtontransistorinaTO218typepackagewithanintegratedBase–Emitterspeed–updiode.Thisdeviceisparticularlysuitableforuseasanoutputstageinhighpower,fastswitchingapplications. | NTE NTE Electronics, Inc | |||
Silicon Complementary Transistors Darlington, Motor/Relay Driver AbsoluteMaximumRatings: Collector–BaseVoltage,VCBO................120V Collector–EmitterVoltage,VCEO..............120V Emitter–BaseVoltage,VEBO....................6V CollectorCurrent,IC Continuous........ | NTE NTE Electronics, Inc |
替换型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
4096-word X 8-bit UV Erasable and Programmable Read Only Memory | HitachiHitachi, Ltd. 日立公司 | |||
4096 x 8-BIT UV ERASABLE PROM | MotorolaMotorola, Inc 摩托罗拉 | |||
32,768 BIT ERASABLE PROGRAMMABLE READ ONLY MEMORIES | TITexas Instruments 德州仪器美国德州仪器公司 | |||
32,768 BIT ERASABLE PROGRAMMABLE READ ONLY MEMORIES | TITexas Instruments 德州仪器美国德州仪器公司 | |||
32,768 BIT ERASABLE PROGRAMMABLE READ ONLY MEMORIES | TITexas Instruments 德州仪器美国德州仪器公司 |
NTE25产品属性
- 类型
描述
- 型号
NTE25
- 制造商
NTE Electronics
- 功能描述
TRANSISTOR PNP SILICON 100V IC=1A TO-237 CASE GENERAL PURPOSE AMP SWITCH COMP'L
- 制造商
NTE Electronics
- 功能描述
BJT PNP 80V 1.2A TO-237
- 制造商
NTE Electronics
- 功能描述
BJT, PNP, 80V, 1.2A, TO-237
- 制造商
NTE Electronics
- 功能描述
T-PNP-SI PLASTIC POWER
- 制造商
NTE Electronics
- 功能描述
TO-237 PNP GEN PUR
- 制造商
NTE Electronics
- 功能描述
BJT, PNP, 80V, 1.2A, TO-237; Transistor
- Polarity
PNP; Collector Emitter Voltage
- V(br)ceo
80V; Power Dissipation
- Pd
850mW; DC Collector
- Current
1.2A; DC Current Gain
- hFE
40; No. of
- Pins
3
- 制造商
NTE Electronics
- 功能描述
Trans GP BJT PNP 80V 2A 3-Pin(3+Tab) TO-237
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
NTE |
22+ |
DIP |
12800 |
本公司只做进口原装!优势低价出售! |
|||
NTE |
23+ |
NA |
30000 |
有挂就有货,只做原装免费送样,可BOM配单 |
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NTE |
23+ |
65480 |
|||||
NTE |
2018+ |
SMD |
5500 |
长期供应原装现货实单可谈 |
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NTE |
2023+ |
新 |
80000 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
|||
NTE |
DIP |
5500 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
ON |
2320+ |
SOT252 |
562000 |
16年只做原装原标渠道现货终端BOM表可配单提供样品 |
|||
NTE |
24+25+/26+27+ |
TO-220-3 |
6328 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
|||
新 |
35 |
全新原装 货期两周 |
|||||
NTE |
22+ |
DIP |
16500 |
原装现货假一赔十 |
NTE25规格书下载地址
NTE25参数引脚图相关
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NTE25数据表相关新闻
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