Silicon NPN Transistor Darlington w/Damper Diode

Description: The NTE256 is a silicon epitaxial planer NPN Darlington transistor in a TO218 type package with an integrated Base–Emitter speed–up diode. This device is particularly suitable for use as an output stage in high power, fast switching applications.

Silicon Complementary Transistors Darlington, Motor/Relay Driver

Absolute Maximum Ratings: Collector–Base Voltage, VCBO . . . . . . . . .. . . . . . . 120V Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . 120V Emitter–Base Voltage, VEBO . . . . . . . . . .. . . . . . . . . . 6V Collector Current, IC Continuous . . . . . . . .

Silicon NPN Transistor Video Amplifier

Features: • High Gain–Bandwidth Product • High Breakdown Voltage • Large Current • Small Reverse Transfer Capacitance Applications: • Wide–Band Amplifiers

Silicon Complementary Transistors High Current Switch

Description: The NTE2562 (NPN) and NTE2563 (PNP) are silicon complementary transistors is a TO220 type package designed for use as a high current switch. Typical application include relay drivers, high–speed inverters, converters, etc. Features: • Low Collector–Emitter Saturation Voltag

Complementary Transistors

Description:\nThe NTE2562 (NPN) and NTE2563 (PNP) are silicon complementary transistors is a TO220 type package designed for use as a high current switch. Typical application include relay drivers, high–speed inverters, converters, etc.Features:\n• Low Collector–Emitter Saturation Voltage\n• High Cu

Silicon Complementary Transistors High Current Switch

Description: The NTE2562 (NPN) and NTE2563 (PNP) are silicon complementary transistors is a TO220 type package designed for use as a high current switch. Typical application include relay drivers, high–speed inverters, converters, etc. Features: • Low Collector–Emitter Saturation Voltag

Complementary Silicon Transistors High Current Switch

Features: • Low Collector Emitter Saturation Voltage • High Current Capacity Applications: • Relay Drivers • High Speed Inverters • Converters

Complementary Silicon Transistors High Current Switch

Features: • Low Collector Emitter Saturation Voltage • High Current Capacity Applications: • Relay Drivers • High Speed Inverters • Converters

Silicon Complementary Transistors High Current, High Speed Switch

Features: • Low Saturation Voltage • Fast Switching Speed • Isolated TO220 Type Package

Silicon Complementary Transistors High Current, High Speed Switch

Features: • Low Saturation Voltage • Fast Switching Speed • Isolated TO220 Type Package

Silicon Complementary Transistors High Current Switch

Features: • Low Saturation Voltage • Fast Switching Speed • Isolated TO220 Type Package Applications: • Car–Use Inductance Drivers, Lamp Drivers • Inverter Drivers, Converters (Strobes, Flashes, FLT Lighting Circuits) • Power Amplifiers (High–Power Car Stereos, Motor Control

Silicon Complementary Transistors High Current Switch

Features: • Low Saturation Voltage • Fast Switching Speed • Isolated TO220 Type Package Applications: • Car–Use Inductance Drivers, Lamp Drivers • Inverter Drivers, Converters (Strobes, Flashes, FLT Lighting Circuits) • Power Amplifiers (High–Power Car Stereos, Motor Control

Bi-Polar transistor Selector Guide

Complementary Transistors

PNP video transistors

DESCRIPTION PNP video transistor in a SOT223 plastic package. NPN complements: BFQ236 and BFQ236A. FEATURES • High breakdown voltages • Low output capacitance • High gain bandwidth • Good thermal stability • Gold metallization ensures excellent reliability • Surface mounting. APPLICATION

SMALL OUTLINE OPTOISOLATORS AC INPUT TRANSISTOR OUTPUT

The MOC256 is an AC input phototransistor optocoupler. The device consists of two infrared emitters connected in anti–parallel and coupled to a silicon NPN phototransistor detector. They are designed for applications requiring the detection or monitoring of AC signals. These devices are constructe

SILICON TRIACS

SILICON TRIACS ● High Current Triacs ● 20 A RMS ● Glass Passivated Wafer ● 400 V to 800 V Off-State Voltage ● 150 A Peak Current ● Max IGT of 50 mA (Quadrants 1 - 3)

SILICON TRIACS

SILICON TRIACS ● High Current Triacs ● 20 A RMS ● Glass Passivated Wafer ● 400 V to 800 V Off-State Voltage ● 150 A Peak Current ● Max IGT of 50 mA (Quadrants 1 - 3)