Germanium PNP Transistor Audio Power Amplifier

Description: The NTE158 is a germanium PNP triode transistor in a TO1 type package designed for low–power, large signal audio applications.

Germanium Transistors

Description:\nThe NTE158 is a germanium PNP triode transistor in a TO1 type package designed for low–power, large signal audio applications.

Integrated Circuit IF Amp & Detector

Description: The NTE1580 is an IF amplifier in a 14–Lead DIP type package with a symmetrical FM demodulator and an AF amplifier with adjustable output voltage. The AF amplifier is also provided with an output for volume control and an input for VCR operation. The input and output of the NTE1

Integrated Circuit IF Amp & Detector

Description:\nThe NTE1580 is an IF amplifier in a 14–Lead DIP type package with a symmetrical FM demodulator and an AF amplifier with adjustable output voltage. The AF amplifier is also provided with an output for volume control and an input for VCR operation.\nThe input and output of the NTE1580 ar

Integrated Circuit CMOS, Frequency Divider/Counter for VCR

Description:\nThe NTE1581 is a frequency divider manufactured by aluminum CMOS technology. It produces a frequency of 1/59719 or 1/88672 of the input frequency (3.58MHz to 60Hz or 4.43MHz to 50Hz).Features:\n• Makes Possible a Crystal Oscillator Circuit\n• Capable of Handling Small−Amplitude Input S

Integrated Circuit CMOS, Frequency Divider/Counter for VCR

Description: The NTE1581 is a frequency divider manufactured by aluminum CMOS technology. It produces a frequency of 1/59719 or 1/88672 of the input frequency (3.58MHz to 60Hz or 4.43MHz to 50Hz). Features: • Makes Possible a Crystal Oscillator Circuit • Capable of Handling Small−Amp

Integrated Circuit Color TV Luminance Chroma System

Description: The NTE1589 is a multi–operational integrated circuit in a 28–Lead DIP type package which has all the necessary functions for video–chroma: such as second differential video tone control circuit (DC controlling available), contrast control, pedestal clamp, brightness adjustment cir

Plastic Medium Power NPN Silicon Transistor

Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. • Suitable for Transformerless, Line–Operated Equipment • Thermopad Construction Provides High Power Dissipation Rating for Hig

TMOS BROADBAND RF POWER FET

The RF TMOS® Line Power Field Effect Transistor N–Channel Enhancement Mode Designed for wideband large–signal amplifier and oscillator applications to 500 MHz. • Guaranteed 28 Volt, 400 MHz Performance Output Power = 2.0 Watts Minimum Gain = 16 dB Efficiency = 55 (Typical) • G

L, S- BAND SPDT SWITCH

DESCRIPTION The µPG158TB is a L-band SPDT (Single Pole Double Throw) GaAs FET switch which was developed for digital cellular, cordless telephone and other L, S-band wireless application. The device can operate from 500 MHz to 2.5 GHz, having the low insertion loss. It housed in an original 6-pin

L, S- BAND SPDT SWITCH

DESCRIPTION The µPG158TB is a L-band SPDT (Single Pole Double Throw) GaAs FET switch which was developed for digital cellular, cordless telephone and other L, S-band wireless application. The device can operate from 500 MHz to 2.5 GHz, having the low insertion loss. It housed in an original 6-pin

Low Power Dual Operational Amplifiers

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Sound I.F. amplifier/demodulator for TV

TELEFUNK ELECTRONIC CREATIVE TECHNOLOGIEN U2200B-FP