TMOS BROADBAND RF POWER FET

The RF TMOS® Line Power Field Effect Transistor N–Channel Enhancement Mode Designed for wideband large–signal amplifier and oscillator applications to 500 MHz. • Guaranteed 28 Volt, 400 MHz Performance Output Power = 2.0 Watts Minimum Gain = 16 dB Efficiency = 55 (Typical) • G

TMOS BROADBAND RF POWER FET

The RF TMOS® Line Power Field Effect Transistor N–Channel Enhancement Mode Designed for wideband large–signal amplifier and oscillator applications to 500 MHz. • Guaranteed 28 Volt, 500 MHz Performance Output Power = 2.0 Watts Minimum Gain = 16 dB (Min) Efficiency = 55 (Typ) •

The Broadband RF TMOS짰 2W, 500MHz, 28V

Designed for wideband large signal amplifier and oscillator applications to 500MHz N–Channel enhancement mode • Guaranteed 28 volt, 500 MHz performance Output power = 2.0 watts Minimum gain = 16 dB (Min.) Efficiency = 55 (Typ.) • Facilitates manual gain control, ALC and modulati

The Broadband RF MOSFET Line 2W, 500MHz, 28V

Designed for wideband large signal amplifier and oscillator applications to 500MHz. ·N–Channel enhancement mode\n·Guaranteed 28 volt, 500 MHz Performance: Output Power = 2.0 Watts, Minimum Gain = 16 dB (Min.), Efficiency = 55% (Typ.)\n·Facilitates Manual Gain Control, ALC and Modulation Techniques\n·100% Tested for Load Mismatch at all Phase Angel with 30:1 VSWR\n·Excellent;

The Broadband RF TMOS? 2W, 500MHz, 28V

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封装/外壳：305A-01 包装：托盘 描述：FET RF 65V 500MHZ 305A-01 分立半导体产品 晶体管 - FET，MOSFET - 射频

TMOS BROADBAND RF POWER FET

The Broadband RF TMOS Line

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The Broadband RF TMOS짰

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Plastic Medium Power NPN Silicon Transistor

Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. • Suitable for Transformerless, Line–Operated Equipment • Thermopad Construction Provides High Power Dissipation Rating for Hig

L, S- BAND SPDT SWITCH

DESCRIPTION The µPG158TB is a L-band SPDT (Single Pole Double Throw) GaAs FET switch which was developed for digital cellular, cordless telephone and other L, S-band wireless application. The device can operate from 500 MHz to 2.5 GHz, having the low insertion loss. It housed in an original 6-pin

L, S- BAND SPDT SWITCH

DESCRIPTION The µPG158TB is a L-band SPDT (Single Pole Double Throw) GaAs FET switch which was developed for digital cellular, cordless telephone and other L, S-band wireless application. The device can operate from 500 MHz to 2.5 GHz, having the low insertion loss. It housed in an original 6-pin

Low Power Dual Operational Amplifiers

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