TMOS BROADBAND RF POWER FET

The RF TMOS® Line Power Field Effect Transistor N–Channel Enhancement Mode Designed for wideband large–signal amplifier and oscillator applications to 500 MHz. • Guaranteed 28 Volt, 400 MHz Performance Output Power = 2.0 Watts Minimum Gain = 16 dB Efficiency = 55 (Typical) • G

TMOS BROADBAND RF POWER FET

The RF TMOS® Line Power Field Effect Transistor N–Channel Enhancement Mode Designed for wideband large–signal amplifier and oscillator applications to 500 MHz. • Guaranteed 28 Volt, 500 MHz Performance Output Power = 2.0 Watts Minimum Gain = 16 dB (Min) Efficiency = 55 (Typ) •

The Broadband RF TMOS짰 2W, 500MHz, 28V

Designed for wideband large signal amplifier and oscillator applications to 500MHz N–Channel enhancement mode • Guaranteed 28 volt, 500 MHz performance Output power = 2.0 watts Minimum gain = 16 dB (Min.) Efficiency = 55 (Typ.) • Facilitates manual gain control, ALC and modulati

The Broadband RF TMOS? 2W, 500MHz, 28V

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封装/外壳：305A-01 包装：托盘 描述：FET RF 65V 500MHZ 305A-01 分立半导体产品 晶体管 - FET，MOSFET - 射频

TMOS BROADBAND RF POWER FET

The Broadband RF MOSFET Line 2W, 500MHz, 28V

The Broadband RF TMOS Line

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The Broadband RF TMOS짰

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Plastic Medium Power NPN Silicon Transistor

Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. • Suitable for Transformerless, Line–Operated Equipment • Thermopad Construction Provides High Power Dissipation Rating for Hig

L, S- BAND SPDT SWITCH

DESCRIPTION The µPG158TB is a L-band SPDT (Single Pole Double Throw) GaAs FET switch which was developed for digital cellular, cordless telephone and other L, S-band wireless application. The device can operate from 500 MHz to 2.5 GHz, having the low insertion loss. It housed in an original 6-pin

L, S- BAND SPDT SWITCH

DESCRIPTION The µPG158TB is a L-band SPDT (Single Pole Double Throw) GaAs FET switch which was developed for digital cellular, cordless telephone and other L, S-band wireless application. The device can operate from 500 MHz to 2.5 GHz, having the low insertion loss. It housed in an original 6-pin

Low Power Dual Operational Amplifiers

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