Low Power Fast Switching Output Stages

Low Power Fast Switching Output Stages • For T.V Radio Audio Output Amplifiers

PLASTIC MEDIUM POWER SILICON TRANSISTORS

NPN PLASTIC MEDIUM POWER SILICON TRANSISTORS Designed For Power Output Stages for Television, Radio, Phonograph And Other Consumer Applications.

Plastic Medium Power NPN Silicon Transistor

Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. • Suitable for Transformerless, Line–Operated Equipment • Thermopad Construction Provides High Power Dissipation Rating for Hig

isc Silicon NPN Power Transistor

文件：238.58 Kbytes Page：2 Pages

包装：散装 描述：SCREWDRIVR SLOTTED 5/16\ 工具 螺丝和螺母起子

封装/外壳：TO-225AA，TO-126-3 包装：卷带（TR） 描述：TRANS NPN 300V 0.5A TO126-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

TRANS NPN 300V 0.5A TO-126

TMOS BROADBAND RF POWER FET

The RF TMOS® Line Power Field Effect Transistor N–Channel Enhancement Mode Designed for wideband large–signal amplifier and oscillator applications to 500 MHz. • Guaranteed 28 Volt, 400 MHz Performance Output Power = 2.0 Watts Minimum Gain = 16 dB Efficiency = 55 (Typical) • G

L, S- BAND SPDT SWITCH

DESCRIPTION The µPG158TB is a L-band SPDT (Single Pole Double Throw) GaAs FET switch which was developed for digital cellular, cordless telephone and other L, S-band wireless application. The device can operate from 500 MHz to 2.5 GHz, having the low insertion loss. It housed in an original 6-pin

L, S- BAND SPDT SWITCH

DESCRIPTION The µPG158TB is a L-band SPDT (Single Pole Double Throw) GaAs FET switch which was developed for digital cellular, cordless telephone and other L, S-band wireless application. The device can operate from 500 MHz to 2.5 GHz, having the low insertion loss. It housed in an original 6-pin

Low Power Dual Operational Amplifiers

文件：1.0094 Mbytes Page：25 Pages