L, S- BAND SPDT SWITCH

DESCRIPTION The µPG158TB is a L-band SPDT (Single Pole Double Throw) GaAs FET switch which was developed for digital cellular, cordless telephone and other L, S-band wireless application. The device can operate from 500 MHz to 2.5 GHz, having the low insertion loss. It housed in an original 6-pin

GaAs INTEGRATED CIRCUIT

FEATURES • Switch control voltage : Vcont (H) = 2.5 to 5.3 V (3.0 V TYP.) : Vcont (L) = −0.2 to +0.2 V (0 V TYP.) • Low insertion loss : LINS1 = 0.30 dB TYP. @ f = 0.5 to 1.0 GHz, Vcont = 3.0 V/0 V : LINS2 = 0.40 dB TYP. @ f = 2.0 GHz, Vcont = 3.0 V/0 V : LINS3 = 0.90 dB MAX. @ f = 2.0 to 2.5

L, S- BAND SPDT SWITCH

DESCRIPTION The µPG158TB is a L-band SPDT (Single Pole Double Throw) GaAs FET switch which was developed for digital cellular, cordless telephone and other L, S-band wireless application. The device can operate from 500 MHz to 2.5 GHz, having the low insertion loss. It housed in an original 6-pin

쩍W L, S-BAND SPDT SWITCH

DESCRIPTION NECs UPG158TB is a GaAs MMIC L, S-band SPDT (Single Pole Double Throw) switch developed for mobile phone and L, S-band applications. FEATURES • SWITCH CONTROL VOLTAGE: Vcont (H) = 2.5 to 5.3 V (3.0 V TYP.) Vcont (L) = −0.2 to +0.2 V (0 V TYP.) • LOW INSERTION LOSS: L

L, S- BAND SPDT SWITCH

DESCRIPTION The µPG158TB is a L-band SPDT (Single Pole Double Throw) GaAs FET switch which was developed for digital cellular, cordless telephone and other L, S-band wireless application. The device can operate from 500 MHz to 2.5 GHz, having the low insertion loss. It housed in an original 6-pin

丝印代码：G1M；GaAs INTEGRATED CIRCUIT

FEATURES • Switch control voltage : Vcont (H) = 2.5 to 5.3 V (3.0 V TYP.) : Vcont (L) = −0.2 to +0.2 V (0 V TYP.) • Low insertion loss : LINS1 = 0.30 dB TYP. @ f = 0.5 to 1.0 GHz, Vcont = 3.0 V/0 V : LINS2 = 0.40 dB TYP. @ f = 2.0 GHz, Vcont = 3.0 V/0 V : LINS3 = 0.90 dB MAX. @ f = 2.0 to 2.5

쩍W L, S-BAND SPDT SWITCH

DESCRIPTION NECs UPG158TB is a GaAs MMIC L, S-band SPDT (Single Pole Double Throw) switch developed for mobile phone and L, S-band applications. FEATURES • SWITCH CONTROL VOLTAGE: Vcont (H) = 2.5 to 5.3 V (3.0 V TYP.) Vcont (L) = −0.2 to +0.2 V (0 V TYP.) • LOW INSERTION LOSS: L

L, S- BAND SPDT SWITCH

Plastic Medium Power NPN Silicon Transistor

Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. • Suitable for Transformerless, Line–Operated Equipment • Thermopad Construction Provides High Power Dissipation Rating for Hig

TMOS BROADBAND RF POWER FET

The RF TMOS® Line Power Field Effect Transistor N–Channel Enhancement Mode Designed for wideband large–signal amplifier and oscillator applications to 500 MHz. • Guaranteed 28 Volt, 400 MHz Performance Output Power = 2.0 Watts Minimum Gain = 16 dB Efficiency = 55 (Typical) • G

Low Power Dual Operational Amplifiers

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