MOSFET – Power, N-Channel 100 V, 23 A, 55 m

Features • Low RDS(on) • High Current Capability • 100 Avalanche Tested • NVD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 23A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 55mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

Power MOSFET 100V 23A 55 mOhm Single N-Channel DPAK

N-Channel Power MOSFET 100 V, 23 A, 55 m廓

文件：143.93 Kbytes Page：7 Pages

MOSFET – Power, N-Channel 100 V, 23 A, 55 m

Features • Low RDS(on) • High Current Capability • 100 Avalanche Tested • NVD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 23A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 55mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

MOSFET – Power, N-Channel 100 V, 23 A, 55 m

Features • Low RDS(on) • High Current Capability • 100 Avalanche Tested • NVD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 23A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 52mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N-channel Enhancement Mode Power MOSFET

Features  VDS= 100V, ID= 30 A RDS(ON)

MOSFET – Power, N-Channel 100 V, 23 A, 55 m

Features • Low RDS(on) • High Current Capability • 100 Avalanche Tested • NVD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

N-Channel Power MOSFET 100 V, 23 A, 55 m廓

文件：143.93 Kbytes Page：7 Pages

N-Channel Power MOSFET

文件：78.19 Kbytes Page：6 Pages

N-Channel Power MOSFET 100 V, 23 A, 56 m Logic Level

文件：127.16 Kbytes Page：6 Pages

N-Channel Power MOSFET 100 V, 23 A, 56 m廓, Logic Level

文件：265.45 Kbytes Page：6 Pages

Single N-Channel Logic Level Power MOSFET 100V, 23A, 56mΩ

N-Channel Power MOSFET

文件：78.19 Kbytes Page：6 Pages

N-Channel Power MOSFET 100 V, 23 A, 56 m Logic Level

文件：127.16 Kbytes Page：6 Pages

N-Channel Power MOSFET 100 V, 23 A, 56 m廓, Logic Level

文件：265.45 Kbytes Page：6 Pages

N-Channel Power MOSFET

文件：78.19 Kbytes Page：6 Pages

N-Channel 100-V (D-S) MOSFET

文件：984.03 Kbytes Page：8 Pages

N-Channel MOSFET uses advanced SGT technology

文件：862.12 Kbytes Page：4 Pages

N-Channel Power MOSFET 100 V, 23 A, 55 m廓

文件：143.93 Kbytes Page：7 Pages

P-Channel Enhancement Mode Field Effect Transistor

General Description The AO6415 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. It is ESD protected. Standard Product AO6415 is Pb-free (meets ROH

P-Channel MOSFET

■ Features ● VDS (V) =-20V ● ID =-3.3A (VGS =-10V) ● RDS(ON)

P-Channel MOSFET

■ Features ● VDS (V) =-20V ● ID =-3.3A (VGS =-10V) ● RDS(ON)

CUSTOMER PRODUCT SPECIFICATION

文件：73.52 Kbytes Page：1 Pages

20V P-Channel MOSFET

文件：316.5 Kbytes Page：5 Pages