isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 23A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 52mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

Single N-Channel Logic Level Power MOSFET 100V, 23A, 56mΩ

N-Channel Power MOSFET 100 V, 23 A, 56 m廓, Logic Level

文件：265.45 Kbytes Page：6 Pages

N-Channel Power MOSFET

文件：78.19 Kbytes Page：6 Pages

N-Channel Power MOSFET 100 V, 23 A, 56 m Logic Level

文件：127.16 Kbytes Page：6 Pages

N-channel Enhancement Mode Power MOSFET

Features  VDS= 100V, ID= 30 A RDS(ON)

N-Channel Power MOSFET

文件：78.19 Kbytes Page：6 Pages

N-Channel Power MOSFET 100 V, 23 A, 56 m Logic Level

文件：127.16 Kbytes Page：6 Pages

N-Channel Power MOSFET

文件：78.19 Kbytes Page：6 Pages

N-Channel Power MOSFET 100 V, 23 A, 56 m廓, Logic Level

文件：265.45 Kbytes Page：6 Pages

N-Channel 100-V (D-S) MOSFET

文件：984.03 Kbytes Page：8 Pages

P-Channel MOSFET

■ Features ● VDS (V) =-20V ● ID =-3.3A (VGS =-10V) ● RDS(ON)

P-Channel Enhancement Mode Field Effect Transistor

General Description The AO6415 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. It is ESD protected. Standard Product AO6415 is Pb-free (meets ROH

P-Channel MOSFET

■ Features ● VDS (V) =-20V ● ID =-3.3A (VGS =-10V) ● RDS(ON)

CUSTOMER PRODUCT SPECIFICATION

文件：73.52 Kbytes Page：1 Pages

20V P-Channel MOSFET

文件：316.5 Kbytes Page：5 Pages