isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 15A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 100mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

Power MOSFET 15 Amps, 60 Volts, Logic Level

文件：93.8 Kbytes Page：10 Pages

Power MOSFET 15 Amps, 60 Volts, Logic Level

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 15A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 100mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

Power MOSFET 15 Amps, 60 Volts, Logic Level

文件：93.8 Kbytes Page：10 Pages

Power MOSFET 15 Amps, 60 Volts, Logic Level

文件：93.8 Kbytes Page：10 Pages

N -CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR

DESCRIPTION The UTC 15N06 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)

Fast Switching

文件：67.34 Kbytes Page：2 Pages

15A, 60V N-CHANNEL POWER MOSFET

文件：245.73 Kbytes Page：6 Pages

N-Channel 60 V (D-S) MOSFET

文件：1.00223 Mbytes Page：8 Pages

60V N-Channel Enhancement Mode MOSFET

文件：153.75 Kbytes Page：4 Pages