TMOS POWER FET 15 AMPERES 60 VOLTS

TMOS V Power Field Effect Transistor DPAK for Surface Mount N–Channel Enhancement–Mode Silicon Gate TMOS V is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 6

Power MOSFET

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N-Channel 60 V (D-S) MOSFET

文件：1.00427 Mbytes Page：8 Pages

TMOS POWER FET 15 AMPERES 60 VOLTS RDS(on) = 0.085 OHM

TMOS V Power Field Effect Transistor DPAK for Surface Mount N–Channel Enhancement–Mode Silicon Gate TMOS V is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 6

Power MOSFET

文件：230.52 Kbytes Page：8 Pages

Power MOSFET

文件：273.42 Kbytes Page：10 Pages

Power MOSFET

文件：273.42 Kbytes Page：10 Pages

Power MOSFET

文件：273.42 Kbytes Page：10 Pages

Power MOSFET

文件：230.52 Kbytes Page：8 Pages

N -CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR

DESCRIPTION The UTC 15N06 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)

Fast Switching

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15A, 60V N-CHANNEL POWER MOSFET

文件：245.73 Kbytes Page：6 Pages

N-Channel 60 V (D-S) MOSFET

文件：1.00223 Mbytes Page：8 Pages

60V N-Channel Enhancement Mode MOSFET

文件：153.75 Kbytes Page：4 Pages