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| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
MTD15N06V | TMOS POWER FET 15 AMPERES 60 VOLTS TMOS V Power Field Effect Transistor DPAK for Surface Mount N–Channel Enhancement–Mode Silicon Gate TMOS V is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 6 | MOTOROLA 摩托罗拉 |   | |
MTD15N06V | N-Channel 60 V (D-S) MOSFET 文件：1.00427 Mbytes Page：8 Pages | VBSEMI 微碧半导体 | | |
MTD15N06V | Power MOSFET 文件：230.52 Kbytes Page：8 Pages | ONSEMI 安森美半导体 | | |
TMOS POWER FET 15 AMPERES 60 VOLTS RDS(on) = 0.085 OHM TMOS V Power Field Effect Transistor DPAK for Surface Mount N–Channel Enhancement–Mode Silicon Gate TMOS V is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 6 | MOTOROLA 摩托罗拉 | | ||
Power MOSFET | ONSEMI 安森美半导体 | | ||
Power MOSFET 文件：230.52 Kbytes Page：8 Pages | ONSEMI 安森美半导体 | | ||
Power MOSFET 文件：273.42 Kbytes Page：10 Pages | ONSEMI 安森美半导体 | | ||
Power MOSFET | ONSEMI 安森美半导体 | | ||
Power MOSFET 文件：273.42 Kbytes Page：10 Pages | ONSEMI 安森美半导体 | | ||
Power MOSFET 文件：273.42 Kbytes Page：10 Pages | ONSEMI 安森美半导体 | | ||
Power MOSFET 文件：230.52 Kbytes Page：8 Pages | ONSEMI 安森美半导体 | | ||
TMOS POWER FET 15 AMPERES 60 VOLTS RDS(on) = 0.085 OHM TMOS V Power Field Effect Transistor DPAK for Surface Mount N–Channel Enhancement–Mode Silicon Gate TMOS V is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 6 | MOTOROLA 摩托罗拉 | | ||
TMOS POWER FET 15 AMPERES TMOS V™ Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on)= 0.18 OHM TMOSV is a new technologydesigned to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles th | MOTOROLA 摩托罗拉 | | ||
TMOS POWER FET 15 AMPERES 60 VOLTS RDS(on) = 0.085 OHM TMOS POWER FET 15 AMPERES 60 VOLTS RDS(on)= 0.085 OHM New Features of TMOS V • On–resistance Area Product about One–half that of Standard MOSFETs with New Low Voltage, Low RDS(on)Technology • Faster Switching than E–FET Predecessors Features Common to TMOS V and TMOS E–FETS | MOTOROLA 摩托罗拉 | | ||
TMOS POWER FET 15 AMPERES 文件：231.14 Kbytes Page：10 Pages | MOTOROLA 摩托罗拉 | |
MTD15N06V产品属性
- 类型
描述
- 型号
MTD15N06V
- 制造商
ON Semiconductor
- 功能描述
Trans MOSFET N-CH 60V 15A 3-Pin(2+Tab) DPAK Rail
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON |
25+ |
TO-252/D-PAK |
32500 |
普通 |
|||
ON |
25+ |
SOT252 |
20000 |
原装 |
|||
onsemi(安森美) |
25+ |
- |
20948 |
样件支持,可原厂排单订货! |
|||
MTD15N06VT4 |
25+ |
2500 |
2500 |
||||
ON(安森美) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
ON(安森美) |
23+ |
17392 |
公司只做原装正品,假一赔十 |
||||
MOTOROLA/摩托罗拉 |
2223+ |
SOT-252 |
26800 |
只做原装正品假一赔十为客户做到零风险 |
|||
ON |
22+ |
SOT252 |
20000 |
公司只做原装 品质保障 |
|||
ON |
05+ |
原厂原装 |
412 |
只做全新原装真实现货供应 |
|||
ON |
26+ |
TO-252 |
6893 |
代理全系列销售, 全新原装正品,价格优势,长期供应,量大可订 |
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MTD15N06V规格书下载地址
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DdatasheetPDF页码索引
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