isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 15A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.12Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC co

TMOS POWER FET 15 AMPERES

TMOS POWER FET 15 AMPERES

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N -CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR

DESCRIPTION The UTC 15N06 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)

Fast Switching

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15A, 60V N-CHANNEL POWER MOSFET

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N-Channel 60 V (D-S) MOSFET

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60V N-Channel Enhancement Mode MOSFET

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