位置：首页 > IC中文资料第9413页 > MTD15N06
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
MTD15N06 | TMOS POWER FET 15 AMPERES 60 VOLTS RDS(on) = 0.085 OHM TMOS V Power Field Effect Transistor DPAK for Surface Mount N–Channel Enhancement–Mode Silicon Gate TMOS V is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 6 | Motorola 摩托罗拉 |   | |
MTD15N06 | TMOS POWER FET 15 AMPERES 60 VOLTS TMOS V Power Field Effect Transistor DPAK for Surface Mount N–Channel Enhancement–Mode Silicon Gate TMOS V is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 6 | Motorola 摩托罗拉 | | |
MTD15N06 | TMOS POWER FET 15 AMPERES 60 VOLTS RDS(on) = 0.085 OHM | ETC 知名厂家 | ETC | |
TMOS POWER FET 15 AMPERES 60 VOLTS TMOS V Power Field Effect Transistor DPAK for Surface Mount N–Channel Enhancement–Mode Silicon Gate TMOS V is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 6 | Motorola 摩托罗拉 | | ||
TMOS POWER FET 15 AMPERES 60 VOLTS RDS(on) = 0.085 OHM TMOS V Power Field Effect Transistor DPAK for Surface Mount N–Channel Enhancement–Mode Silicon Gate TMOS V is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 6 | Motorola 摩托罗拉 | | ||
N-Channel 60 V (D-S) MOSFET 文件：1.00427 Mbytes Page：8 Pages | VBSEMI 微碧半导体 | | ||
Power MOSFET 文件：230.52 Kbytes Page：8 Pages | ONSEMI 安森美半导体 | | ||
Power MOSFET 文件：230.52 Kbytes Page：8 Pages | ONSEMI 安森美半导体 | | ||
Power MOSFET | ONSEMI 安森美半导体 | | ||
Power MOSFET | ONSEMI 安森美半导体 | | ||
Power MOSFET 文件：273.42 Kbytes Page：10 Pages | ONSEMI 安森美半导体 | | ||
Power MOSFET 文件：273.42 Kbytes Page：10 Pages | ONSEMI 安森美半导体 | | ||
Power MOSFET 文件：273.42 Kbytes Page：10 Pages | ONSEMI 安森美半导体 | | ||
Power MOSFET 文件：230.52 Kbytes Page：8 Pages | ONSEMI 安森美半导体 | | ||
N -CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR DESCRIPTION The UTC 15N06 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON) | UTC 友顺 | | ||
15A, 60V N-CHANNEL POWER MOSFET 文件：245.73 Kbytes Page：6 Pages | UTC 友顺 | | ||
N-Channel 60 V (D-S) MOSFET 文件：1.00223 Mbytes Page：8 Pages | VBSEMI 微碧半导体 | | ||
Fast Switching 文件：67.34 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
60V N-Channel Enhancement Mode MOSFET 文件：153.75 Kbytes Page：4 Pages | PANJIT 強茂 | |
MTD15N06产品属性
- 类型
描述
- 型号
MTD15N06
- 制造商
MOTOROLA
- 制造商全称
Motorola, Inc
- 功能描述
TMOS POWER FET 15 AMPERES 60 VOLTS RDS(on) = 0.085 OHM
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VBsemi |
24+ |
TO252 |
18000 |
原装正品 有挂有货 假一赔十 |
|||
ON/安森美 |
24+ |
NA/ |
1800 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
VBsemi/台湾微碧 |
25+ |
TO-252 |
30000 |
代理全新原装现货,价格优势 |
|||
ON |
05+ |
原厂原装 |
412 |
只做全新原装真实现货供应 |
|||
ON |
25+ |
TO-252 |
4500 |
全新原装、诚信经营、公司现货销售! |
|||
ON |
23+24 |
TO-252 |
28950 |
专营原装正品SMD二三极管,电源IC |
|||
ON |
22+ |
TO-252 |
3000 |
原装正品,支持实单 |
|||
MOT |
25+ |
SOT-252 |
9500 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
ON |
23+ |
TO-252 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
|||
ON |
06+ |
SOT252 |
75 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
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MTD15N06规格书下载地址
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