位置：首页 > IC中文资料第9413页 > MTD15N06
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
MTD15N06 | TMOS POWER FET 15 AMPERES 60 VOLTS RDS(on) = 0.085 OHM TMOS V Power Field Effect Transistor DPAK for Surface Mount N–Channel Enhancement–Mode Silicon Gate TMOS V is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 6 | MOTOROLA 摩托罗拉 |   | |
MTD15N06 | TMOS POWER FET 15 AMPERES 60 VOLTS TMOS V Power Field Effect Transistor DPAK for Surface Mount N–Channel Enhancement–Mode Silicon Gate TMOS V is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 6 | MOTOROLA 摩托罗拉 | | |
MTD15N06 | TMOS POWER FET 15 AMPERES 60 VOLTS RDS(on) = 0.085 OHM | ETC 知名厂家 | ETC | |
TMOS POWER FET 15 AMPERES 60 VOLTS TMOS V Power Field Effect Transistor DPAK for Surface Mount N–Channel Enhancement–Mode Silicon Gate TMOS V is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 6 | MOTOROLA 摩托罗拉 | | ||
TMOS POWER FET 15 AMPERES 60 VOLTS RDS(on) = 0.085 OHM TMOS V Power Field Effect Transistor DPAK for Surface Mount N–Channel Enhancement–Mode Silicon Gate TMOS V is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 6 | MOTOROLA 摩托罗拉 | | ||
N-Channel 60 V (D-S) MOSFET 文件：1.00427 Mbytes Page：8 Pages | VBSEMI 微碧半导体 | | ||
Power MOSFET 文件：230.52 Kbytes Page：8 Pages | ONSEMI 安森美半导体 | | ||
Power MOSFET 文件：230.52 Kbytes Page：8 Pages | ONSEMI 安森美半导体 | | ||
Power MOSFET | ONSEMI 安森美半导体 | | ||
Power MOSFET | ONSEMI 安森美半导体 | | ||
Power MOSFET 文件：273.42 Kbytes Page：10 Pages | ONSEMI 安森美半导体 | | ||
Power MOSFET 文件：273.42 Kbytes Page：10 Pages | ONSEMI 安森美半导体 | | ||
Power MOSFET 文件：273.42 Kbytes Page：10 Pages | ONSEMI 安森美半导体 | | ||
Power MOSFET 文件：230.52 Kbytes Page：8 Pages | ONSEMI 安森美半导体 | | ||
TMOS POWER FET 15 AMPERES TMOS V™ Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on)= 0.18 OHM TMOSV is a new technologydesigned to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles th | MOTOROLA 摩托罗拉 | | ||
TMOS POWER FET 15 AMPERES 60 VOLTS RDS(on) = 0.085 OHM TMOS POWER FET 15 AMPERES 60 VOLTS RDS(on)= 0.085 OHM New Features of TMOS V • On–resistance Area Product about One–half that of Standard MOSFETs with New Low Voltage, Low RDS(on)Technology • Faster Switching than E–FET Predecessors Features Common to TMOS V and TMOS E–FETS | MOTOROLA 摩托罗拉 | | ||
TMOS POWER FET 15 AMPERES 文件：231.14 Kbytes Page：10 Pages | MOTOROLA 摩托罗拉 | |
MTD15N06产品属性
- 类型
描述
- 型号
MTD15N06
- 制造商
MOTOROLA
- 制造商全称
Motorola, Inc
- 功能描述
TMOS POWER FET 15 AMPERES 60 VOLTS RDS(on) = 0.085 OHM
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
onsemi(安森美) |
25+ |
- |
21000 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
ON |
06+ |
SOT252 |
75 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
ON(安森美) |
26+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
ON |
25+23+ |
TO252 |
73532 |
绝对原装正品现货,全新深圳原装进口现货 |
|||
ON |
23+ |
TO-252 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
|||
ON |
22+ |
TO-252 |
3000 |
原装正品,支持实单 |
|||
ON |
25+ |
TO-252 |
4500 |
全新原装、诚信经营、公司现货销售! |
|||
ON |
TO-252 |
22+ |
10000 |
终端免费提供样品 可开13%增值税发票 |
|||
MTD15N06VT4 |
25+ |
2500 |
2500 |
||||
VBsemi |
25+ |
TO252 |
18000 |
原装正品 有挂有货 假一赔十 |
MTD15N06规格书下载地址
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