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型号 功能描述 生产厂家 企业 LOGO 操作
MTD15N06

TMOS POWER FET 15 AMPERES 60 VOLTS RDS(on) = 0.085 OHM

TMOS V Power Field Effect Transistor DPAK for Surface Mount N–Channel Enhancement–Mode Silicon Gate TMOS V is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 6

MOTOROLA

摩托罗拉

MTD15N06

TMOS POWER FET 15 AMPERES 60 VOLTS

TMOS V Power Field Effect Transistor DPAK for Surface Mount N–Channel Enhancement–Mode Silicon Gate TMOS V is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 6

MOTOROLA

摩托罗拉

MTD15N06

TMOS POWER FET 15 AMPERES 60 VOLTS RDS(on) = 0.085 OHM

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知名厂家

TMOS POWER FET 15 AMPERES 60 VOLTS

TMOS V Power Field Effect Transistor DPAK for Surface Mount N–Channel Enhancement–Mode Silicon Gate TMOS V is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 6

MOTOROLA

摩托罗拉

TMOS POWER FET 15 AMPERES 60 VOLTS RDS(on) = 0.085 OHM

TMOS V Power Field Effect Transistor DPAK for Surface Mount N–Channel Enhancement–Mode Silicon Gate TMOS V is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 6

MOTOROLA

摩托罗拉

N-Channel 60 V (D-S) MOSFET

文件:1.00427 Mbytes Page:8 Pages

VBSEMI

微碧半导体

Power MOSFET

文件:230.52 Kbytes Page:8 Pages

ONSEMI

安森美半导体

Power MOSFET

文件:230.52 Kbytes Page:8 Pages

ONSEMI

安森美半导体

Power MOSFET

ONSEMI

安森美半导体

Power MOSFET

ONSEMI

安森美半导体

Power MOSFET

文件:273.42 Kbytes Page:10 Pages

ONSEMI

安森美半导体

Power MOSFET

文件:273.42 Kbytes Page:10 Pages

ONSEMI

安森美半导体

Power MOSFET

文件:273.42 Kbytes Page:10 Pages

ONSEMI

安森美半导体

Power MOSFET

文件:230.52 Kbytes Page:8 Pages

ONSEMI

安森美半导体

TMOS POWER FET 15 AMPERES

TMOS V™ Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on)= 0.18 OHM TMOSV is a new technologydesigned to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles th

MOTOROLA

摩托罗拉

TMOS POWER FET 15 AMPERES 60 VOLTS RDS(on) = 0.085 OHM

TMOS POWER FET 15 AMPERES 60 VOLTS RDS(on)= 0.085 OHM New Features of TMOS V • On–resistance Area Product about One–half that of Standard MOSFETs with New Low Voltage, Low RDS(on)Technology • Faster Switching than E–FET Predecessors Features Common to TMOS V and TMOS E–FETS

MOTOROLA

摩托罗拉

TMOS POWER FET 15 AMPERES

文件:231.14 Kbytes Page:10 Pages

MOTOROLA

摩托罗拉

MTD15N06产品属性

  • 类型

    描述

  • 型号

    MTD15N06

  • 制造商

    MOTOROLA

  • 制造商全称

    Motorola, Inc

  • 功能描述

    TMOS POWER FET 15 AMPERES 60 VOLTS RDS(on) = 0.085 OHM

更新时间:2026-7-31 23:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
onsemi(安森美)
25+
-
21000
正规渠道,免费送样。支持账期,BOM一站式配齐
onsemi(安森美)
25+
-
20948
样件支持,可原厂排单订货!
ON/安森美
23+
TO-252
15238
原厂授权一级代理,专业海外优势订货,价格优势、品种
ON
23+
SOT252
50000
全新原装正品现货,支持订货
ON
26+
SOT252
18000
原装正品,可配单,支持实单
ON(安森美)
23+
17392
公司只做原装正品,假一赔十
MOTOROLA/摩托罗拉
2223+
SOT-252
26800
只做原装正品假一赔十为客户做到零风险
MTD15N06VT4
25+
2500
2500
ON
26+
TO-252
6893
代理全系列销售, 全新原装正品,价格优势,长期供应,量大可订
ON(安森美)
26+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持

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