位置：首页 > IC中文资料第1790页 > NTBV45N06
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
NTBV45N06 | Power MOSFET 45 Amps, 60 Volts 文件：148.06 Kbytes Page：7 Pages | ONSEMI 安森美半导体 |   | |
NTBV45N06 | Power MOSFET 45 Amps, 60 Volts N?밅hannel TO??20 and D2PAK 文件：66.71 Kbytes Page：8 Pages | ONSEMI 安森美半导体 | | |
NTBV45N06 | Power MOSFET 60V, 45A, 28 mOhm, Single N-Channe,l D2PAK, Logic Level. | ONSEMI 安森美半导体 | | |
Single N-Channel Logic Level Power MOSFET 60V, 45A, 28 mΩ | ONSEMI 安森美半导体 | | ||
Power MOSFET 45 Amps, 60 Volts 文件：148.25 Kbytes Page：8 Pages | ONSEMI 安森美半导体 | | ||
Power MOSFET 45 Amps, 60 Volts 文件：148.25 Kbytes Page：8 Pages | ONSEMI 安森美半导体 | | ||
Power MOSFET 45 Amps, 60 Volts 文件：148.06 Kbytes Page：7 Pages | ONSEMI 安森美半导体 | | ||
MOSFET N-CH 60V 45A D2PAK | ONSEMI 安森美半导体 | | ||
45A, 60V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as | FAIRCHILD 仙童半导体 | | ||
45A, 60V, 0.028 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as | INTERSIL | | ||
45A, 60V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as | FAIRCHILD 仙童半导体 | | ||
45A, 60V, 0.028 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as | INTERSIL | | ||
45A, 60V, 0.028 Ohm, Logic Level N-Channel Power MOSFETs These are N-Channel enhancement mode power MOSFETs manufactured using the latest manufacturing process technology. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in app | INTERSIL | |
NTBV45N06产品属性
- 类型
描述
- 型号
NTBV45N06
- 功能描述
MOSFET NFET 60V 45A 28MOHM
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
APTMICROSEMI |
23+ |
T-MAX |
69820 |
终端可以免费供样,支持BOM配单! |
|||
ON(安森美) |
23+ |
标准封装 |
5000 |
原厂原装现货订货价格优势终端BOM表可配单提供样品 |
|||
三年内 |
1983 |
只做原装正品 |
|||||
ON Semiconductor |
23+ |
TO2633 D2Pak (2 Leads + Tab) T |
8000 |
只做原装现货 |
|||
ON Semiconductor |
23+ |
TO2633 D2Pak (2 Leads + Tab) T |
7000 |
||||
ON(安森美) |
25+ |
标准封装 |
8800 |
公司只做原装,详情请咨询 |
|||
ON |
26+ |
TSSOP |
86720 |
全新原装进口现货价格优惠 本公司承诺原装正品假一赔 |
|||
ON(安森美) |
24+ |
N/A |
18000 |
原装正品现货支持实单 |
|||
ON Semiconductor |
22+ |
TO2633 D2Pak (2 Leads + Tab) T |
9000 |
原厂渠道,现货配单 |
|||
ON |
24+ |
NA |
3000 |
进口原装 假一罚十 现货 |
NTBV45N06芯片相关品牌
NTBV45N06规格书下载地址
NTBV45N06参数引脚图相关
- PCBA
- pc817
- pc133
- pc100
- PC/104
- p800
- p600
- otl功率放大器
- opa642
- opa2604
- op37
- op07中文资料
- op07
- OLED显示屏
- oled发光材料
- OLED材料
- ogs
- OEM
- nvidia
- ntc热敏电阻
- NTC21
- NTC20D8
- NTC20D5
- NTC1D20
- NTC1D15
- NTC1D13
- NTC16D9
- NTC16D8
- NTC16D7
- NTC16D5
- NTC120
- NTC1110-20MHZ
- NTC1110-12.8MHZ
- NTC111
- NTC110
- NTC-10SDM-B
- NTC10D9
- NTC10D8
- NTC10D7
- NTC10D5
- NTC10
- NTC0805J150K
- NTC0805J10K
- NTC0805J100K
- NTC0805
- NTC-0622
- NTC-0621
- NTC0603
- NTC-0422
- NTC-0421
- NTC-04-0002
- NTC-04-0001
- NTC015WP00
- NTC
- NTBV75N06T4G
- NTBV5605T4G
- NTBV45N06T4G
- NTBV45N06LT4G
- NTBV30N20T4G
- NTBV25P06T4G
- NT-BNC-N
- NT-BATT-CHG
- NTBA104GU16
- NTBA104GU12,115
- NTBA104GU12
- NTBA104BQ
- NTBA104
- NTB90N02T4G
- NTB90N02T4
- NTB90N02G
- NTB90N02_05
- NTB90N02
- NTB8N50
- NTB85N03T4G
- NTB85N03T4
- NTB85N03G
- NTB85N03
- NTB7A16
- NTB5605
- NTB4302
- NTB0104
- NTB0102
- NTA-X
- NTAG213
- NTAG210
- NTA2425
- NTA2410
- NT95089
- NT91215
- NT91214
- NT90TP
- NT90T-C
- NT90T-B
- NT90T
- NT90-B
- NT90-A
- NT90_07
NTBV45N06数据表相关新闻
NTBG070N120M3S MOSFET
onsemi 的 NTBG070N120M3S 是应用了 M3S 技术的 EliteSiC、65 mΩ、1200 V SiC MOSFET，采用 D2PAK-7L 封装
2024-4-17NTCC201E4103FT-C
NTC熱敏電阻器 NTC BARE DIE AG2 10K 1% TAPE E4
2023-12-28NTCC201E4502FT-C
NTCC201E4502FT-C
2023-10-10NTBG014N120M3P
NTBG014N120M3P
2023-7-4NTCG103JF103FT1 NTC 热敏电阻器 10k 0402（1005 公制）
NTCG103JF103FT1
2023-3-28NTB5411NT4G，兴中扬只售原装
NTB5411NT4G，兴中扬只售原装
2019-11-30
DdatasheetPDF页码索引
- P1
- P2
- P3
- P4
- P5
- P6
- P7
- P8
- P9
- P10
- P11
- P12
- P13
- P14
- P15
- P16
- P17
- P18
- P19
- P20
- P21
- P22
- P23
- P24
- P25
- P26
- P27
- P28
- P29
- P30
- P31
- P32
- P33
- P34
- P35
- P36
- P37
- P38
- P39
- P40
- P41
- P42
- P43
- P44
- P45
- P46
- P47
- P48
- P49
- P50
- P51
- P52
- P53
- P54
- P55
- P56
- P57
- P58
- P59
- P60
- P61
- P62
- P63
- P64
- P65
- P66
- P67
- P68
- P69
- P70
- P71
- P72
- P73
- P74
- P75
- P76
- P77
- P78
- P79
- P80
- P81
- P82
- P83
- P84
- P85
- P86
- P87
- P88
- P89
- P90
- P91
- P92
- P93
- P94
- P95
- P96
- P97
- P98
- P99
- P100
- P101
- P102
- P103
- P104
- P105
- P106
- P107
- P108
