型号 功能描述 生产厂家 企业 LOGO 操作
RFP45N06

45A, 60V, 0.028 Ohm, N-Channel Power MOSFETs

These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as

Intersil

RFP45N06

45A, 60V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs

These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as

Fairchild

仙童半导体

RFP45N06

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 45A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 28mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

ISC

无锡固电

RFP45N06

MOSFET N-CH 60V 45A TO-220AB

ONSEMI

安森美半导体

RFP45N06

45A, 60V, 0.028 Ohm, N-Channel Power

文件:381.64 Kbytes Page:8 Pages

Fairchild

仙童半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 45A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 28mΩ(Max)@VGS= 5V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

ISC

无锡固电

45A, 60V, 0.028 Ohm, Logic Level N-Channel Power MOSFETs

These are N-Channel enhancement mode power MOSFETs manufactured using the latest manufacturing process technology. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in app

Intersil

N-Channel 60 V (D-S) MOSFET

文件:1.31332 Mbytes Page:9 Pages

VBSEMI

微碧半导体

N?륝hannel Logic Level Enhancement Mode Field Effect Transistor

Product Summary: BVDSS 60V RDSON (MAX.) 45mΩ ID 18A UIS, Rg 100 Tested Pb‐Free Lead Plating & Halogen Free

EXCELLIANCE

杰力科技

N?륝hannel Logic Level Enhancement Mode Field Effect Transistor

Product Summary: BVDSS 60V RDSON (MAX.) 45mΩ ID 6.5A UIS, Rg 100 Tested Pb‐Free Lead Plating & Halogen Free

EXCELLIANCE

杰力科技

Fast Switching

文件:49.43 Kbytes Page:2 Pages

ISC

无锡固电

N-Channel Enhancement Mode Field Effect Transistor

文件:654.81 Kbytes Page:6 Pages

ADV

爱德微

N-Channel Enhancement Mode Field Effect Transistor

文件:673.29 Kbytes Page:6 Pages

ADV

爱德微

RFP45N06产品属性

  • 类型

    描述

  • 型号

    RFP45N06

  • 功能描述

    MOSFET TO-220AB N-Ch Power

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2025-12-23 9:48:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
FAIRCHILD/仙童
23+
TO-220
50000
全新原装正品现货,支持订货
FAIRCHILD/仙童
23+
TO-220
89630
当天发货全新原装现货
Fairchild/ON
22+
TO2203
9000
原厂渠道,现货配单
HARRIS(哈利斯)
20+
TO-220
3000
FAIRCHILD/仙童
23+
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
FSC
25+
TO-252
86720
全新原装进口现货价格优惠 本公司承诺原装正品假一赔
ONSEMI/安森美
24+
TO-220
7800
全新原厂原装正品现货,低价出售,实单可谈
onsemi(安森美)
24+
TO-220
8075
支持大陆交货,美金交易。原装现货库存。
FSC/ON
23+
原包装原封 □□
1422
原装进口特价供应 特价,原装元器件供应,支持开发样品 更多详细咨询 库存
24+
N/A
56000
一级代理-主营优势-实惠价格-不悔选择

RFP45N06数据表相关新闻