型号 功能描述 生产厂家 企业 LOGO 操作
RFP45N06

45A, 60V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs

These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as

Fairchild

仙童半导体

RFP45N06

45A, 60V, 0.028 Ohm, N-Channel Power MOSFETs

These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as

Intersil

RFP45N06

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 45A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 28mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

ISC

无锡固电

RFP45N06

45A, 60V, 0.028 Ohm, N-Channel Power

文件:381.64 Kbytes Page:8 Pages

Fairchild

仙童半导体

RFP45N06

MOSFET N-CH 60V 45A TO-220AB

ONSEMI

安森美半导体

45A, 60V, 0.028 Ohm, Logic Level N-Channel Power MOSFETs

These are N-Channel enhancement mode power MOSFETs manufactured using the latest manufacturing process technology. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in app

Intersil

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 45A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 28mΩ(Max)@VGS= 5V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

ISC

无锡固电

N-Channel 60 V (D-S) MOSFET

文件:1.31332 Mbytes Page:9 Pages

VBSEMI

微碧半导体

N?륝hannel Logic Level Enhancement Mode Field Effect Transistor

Product Summary: BVDSS 60V RDSON (MAX.) 45mΩ ID 18A UIS, Rg 100 Tested Pb‐Free Lead Plating & Halogen Free

EXCELLIANCE

杰力科技

N?륝hannel Logic Level Enhancement Mode Field Effect Transistor

Product Summary: BVDSS 60V RDSON (MAX.) 45mΩ ID 6.5A UIS, Rg 100 Tested Pb‐Free Lead Plating & Halogen Free

EXCELLIANCE

杰力科技

Fast Switching

文件:49.43 Kbytes Page:2 Pages

ISC

无锡固电

N-Channel Enhancement Mode Field Effect Transistor

文件:654.81 Kbytes Page:6 Pages

ADV

爱德微

N-Channel Enhancement Mode Field Effect Transistor

文件:673.29 Kbytes Page:6 Pages

ADV

爱德微

RFP45N06产品属性

  • 类型

    描述

  • 型号

    RFP45N06

  • 功能描述

    MOSFET TO-220AB N-Ch Power

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2025-10-24 20:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
FAIRCHILD/仙童
24+
NA/
3885
原厂直销,现货供应,账期支持!
ONSEMI/安森美
25+
TO-220
20300
ONSEMI/安森美原装特价RFP45N06即刻询购立享优惠#长期有货
FSC/ON
23+
原包装原封 □□
1422
原装进口特价供应 特价,原装元器件供应,支持开发样品 更多详细咨询 库存
HARRIS(哈利斯)
20+
TO-220
3000
INTERSIL/FSC
NEW
TO-220
28610
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订
FAIRCHILD
23+
TO-220
5000
专做原装正品,假一罚百!
FSC
1750+
TO-220
45
一级代理,专注军工、汽车、医疗、工业、新能源、电力
ONSEMI/安森美
24+
TO-220
7800
全新原厂原装正品现货,低价出售,实单可谈
HARRIS
18+
TO220
12500
全新原装正品,本司专业配单,大单小单都配
onsemi(安森美)
24+
TO-220
8075
支持大陆交货,美金交易。原装现货库存。

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