位置:首页 > IC中文资料第3580页 > RFP45N06
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
RFP45N06 | 45A, 60V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as | Fairchild 仙童半导体 | ||
RFP45N06 | 45A, 60V, 0.028 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as | Intersil | ||
RFP45N06 | isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 45A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 28mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control | ISC 无锡固电 | ||
RFP45N06 | 45A, 60V, 0.028 Ohm, N-Channel Power 文件:381.64 Kbytes Page:8 Pages | Fairchild 仙童半导体 | ||
RFP45N06 | MOSFET N-CH 60V 45A TO-220AB | ONSEMI 安森美半导体 | ||
45A, 60V, 0.028 Ohm, Logic Level N-Channel Power MOSFETs These are N-Channel enhancement mode power MOSFETs manufactured using the latest manufacturing process technology. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in app | Intersil | |||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 45A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 28mΩ(Max)@VGS= 5V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control | ISC 无锡固电 | |||
N-Channel 60 V (D-S) MOSFET 文件:1.31332 Mbytes Page:9 Pages | VBSEMI 微碧半导体 | |||
N?륝hannel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 60V RDSON (MAX.) 45mΩ ID 18A UIS, Rg 100 Tested Pb‐Free Lead Plating & Halogen Free | EXCELLIANCE 杰力科技 | |||
N?륝hannel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 60V RDSON (MAX.) 45mΩ ID 6.5A UIS, Rg 100 Tested Pb‐Free Lead Plating & Halogen Free | EXCELLIANCE 杰力科技 | |||
Fast Switching 文件:49.43 Kbytes Page:2 Pages | ISC 无锡固电 | |||
N-Channel Enhancement Mode Field Effect Transistor 文件:654.81 Kbytes Page:6 Pages | ADV 爱德微 | |||
N-Channel Enhancement Mode Field Effect Transistor 文件:673.29 Kbytes Page:6 Pages | ADV 爱德微 |
RFP45N06产品属性
- 类型
描述
- 型号
RFP45N06
- 功能描述
MOSFET TO-220AB N-Ch Power
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS(导通)
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FAIRCHILD/仙童 |
24+ |
NA/ |
3885 |
原厂直销,现货供应,账期支持! |
|||
ONSEMI/安森美 |
25+ |
TO-220 |
20300 |
ONSEMI/安森美原装特价RFP45N06即刻询购立享优惠#长期有货 |
|||
FSC/ON |
23+ |
原包装原封 □□ |
1422 |
原装进口特价供应 特价,原装元器件供应,支持开发样品 更多详细咨询 库存 |
|||
HARRIS(哈利斯) |
20+ |
TO-220 |
3000 |
||||
INTERSIL/FSC |
NEW |
TO-220 |
28610 |
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订 |
|||
FAIRCHILD |
23+ |
TO-220 |
5000 |
专做原装正品,假一罚百! |
|||
FSC |
1750+ |
TO-220 |
45 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
ONSEMI/安森美 |
24+ |
TO-220 |
7800 |
全新原厂原装正品现货,低价出售,实单可谈 |
|||
HARRIS |
18+ |
TO220 |
12500 |
全新原装正品,本司专业配单,大单小单都配 |
|||
onsemi(安森美) |
24+ |
TO-220 |
8075 |
支持大陆交货,美金交易。原装现货库存。 |
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RFP45N06规格书下载地址
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深圳市大唐盛世半导体有限公司 手 机:17727572380 。 电 话:0755-83226739 Q Q:626839837。 微信号:15096137729
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DdatasheetPDF页码索引
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