位置：首页 > IC中文资料第3580页 > RFP45N06
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
RFP45N06 | 45A, 60V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as | FAIRCHILD 仙童半导体 |   | |
RFP45N06 | 45A, 60V, 0.028 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as | INTERSIL | | |
RFP45N06 | isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 45A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 28mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control | ISC 无锡固电 | | |
RFP45N06 | 45A, 60V, 0.028 Ohm, N-Channel Power 文件：381.64 Kbytes Page：8 Pages | FAIRCHILD 仙童半导体 | | |
RFP45N06 | MOSFET N-CH 60V 45A TO-220AB | ONSEMI 安森美半导体 | | |
45A, 60V, 0.028 Ohm, Logic Level N-Channel Power MOSFETs These are N-Channel enhancement mode power MOSFETs manufactured using the latest manufacturing process technology. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in app | INTERSIL | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 45A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 28mΩ(Max)@VGS= 5V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control | ISC 无锡固电 | | ||
N-Channel 60 V (D-S) MOSFET 文件：1.31332 Mbytes Page：9 Pages | VBSEMI 微碧半导体 | | ||
45A, 60V, 0.028 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as | INTERSIL | | ||
45A, 60V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as | FAIRCHILD 仙童半导体 | |
RFP45N06产品属性
- 类型
描述
- 型号
RFP45N06
- 功能描述
MOSFET TO-220AB N-Ch Power
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TI |
25+ |
TO-220 |
7786 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
TI |
25+ |
TO-220 |
7786 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
FSC |
1750+ |
TO-220 |
45 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
HARRIS(哈利斯) |
20+ |
TO-220 |
3000 |
||||
HAR |
25+ |
RFP45N06LE |
13528 |
振宏微原装正品,假一罚百 |
|||
FSC/ON |
26+ |
原包装原封 □□ |
1422 |
原装进口特价供应 特价，原装元器件供应，支持开发样品 更多详细咨询 库存 |
|||
FAIRCHILD |
1750+ |
TO-220 |
28 |
全新 发货1-2天 |
|||
24+ |
5000 |
公司存货 |
|||||
FSC |
17+ |
TO-220 |
6200 |
||||
FSC |
26+ |
TO-252 |
86720 |
全新原装进口现货价格优惠 本公司承诺原装正品假一赔 |
RFP45N06规格书下载地址
RFP45N06参数引脚图相关
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RFP45N06数据表相关新闻
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?RFP18N08，全新原装当天发货或门市自取0755-82732291.
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深圳市大唐盛世半导体有限公司 手 机：17727572380 。 电 话：0755-83226739 Q Q:626839837。 微信号：15096137729
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可立即发货
2019-9-24
DdatasheetPDF页码索引
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