型号 功能描述 生产厂家 企业 LOGO 操作
RFP45N06

45A, 60V, 0.028 Ohm, N-Channel Power MOSFETs

These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as

Intersil

RFP45N06

45A, 60V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs

These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as

Fairchild

仙童半导体

RFP45N06

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 45A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 28mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

ISC

无锡固电

RFP45N06

MOSFET N-CH 60V 45A TO-220AB

ONSEMI

安森美半导体

RFP45N06

45A, 60V, 0.028 Ohm, N-Channel Power

文件:381.64 Kbytes Page:8 Pages

Fairchild

仙童半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 45A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 28mΩ(Max)@VGS= 5V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

ISC

无锡固电

45A, 60V, 0.028 Ohm, Logic Level N-Channel Power MOSFETs

These are N-Channel enhancement mode power MOSFETs manufactured using the latest manufacturing process technology. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in app

Intersil

N-Channel 60 V (D-S) MOSFET

文件:1.31332 Mbytes Page:9 Pages

VBSEMI

微碧半导体

N?륝hannel Logic Level Enhancement Mode Field Effect Transistor

Product Summary: BVDSS 60V RDSON (MAX.) 45mΩ ID 18A UIS, Rg 100 Tested Pb‐Free Lead Plating & Halogen Free

EXCELLIANCE

杰力科技

N?륝hannel Logic Level Enhancement Mode Field Effect Transistor

Product Summary: BVDSS 60V RDSON (MAX.) 45mΩ ID 6.5A UIS, Rg 100 Tested Pb‐Free Lead Plating & Halogen Free

EXCELLIANCE

杰力科技

Fast Switching

文件:49.43 Kbytes Page:2 Pages

ISC

无锡固电

N-Channel Enhancement Mode Field Effect Transistor

文件:654.81 Kbytes Page:6 Pages

ADV

爱德微

N-Channel Enhancement Mode Field Effect Transistor

文件:673.29 Kbytes Page:6 Pages

ADV

爱德微

RFP45N06产品属性

  • 类型

    描述

  • 型号

    RFP45N06

  • 功能描述

    MOSFET TO-220AB N-Ch Power

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2025-12-23 11:36:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
NA
25+
NA
10
全新原装正品支持含税
FAIRCHILD/仙童
23+
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
24+
N/A
56000
一级代理-主营优势-实惠价格-不悔选择
FAIRCHILD/仙童
24+
NA/
3885
原厂直销,现货供应,账期支持!
INTESIL
2447
TO-220
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
FAIRCHILD/仙童
23+
TO-220
50000
全新原装正品现货,支持订货
HAR
23+
RFP45N06LE
13528
振宏微原装正品,假一罚百
FAIRC
2023+
TO-220
50000
原装现货
ONSEMI/安森美
24+
TO-220
7800
全新原厂原装正品现货,低价出售,实单可谈
HARRIS
18+
TO220
12500
全新原装正品,本司专业配单,大单小单都配

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