位置:首页 > IC中文资料第3580页 > RFP45N06LE
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
RFP45N06LE | 45A, 60V, 0.028 Ohm, Logic Level N-Channel Power MOSFETs These are N-Channel enhancement mode power MOSFETs manufactured using the latest manufacturing process technology. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in app | INTERSIL | ||
RFP45N06LE | isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 45A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 28mΩ(Max)@VGS= 5V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control | ISC 无锡固电 | ||
RFP45N06LE | N-Channel 60 V (D-S) MOSFET 文件:1.31332 Mbytes Page:9 Pages | VBSEMI 微碧半导体 | ||
45A, 60V, 0.028 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as | INTERSIL | |||
45A, 60V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as | FAIRCHILD 仙童半导体 | |||
45A, 60V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as | FAIRCHILD 仙童半导体 | |||
45A, 60V, 0.028 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as | INTERSIL |
RFP45N06LE产品属性
- 类型
描述
- 型号
RFP45N06LE
- 制造商
Rochester Electronics LLC
- 功能描述
- Bulk
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TI |
25+ |
TO-220 |
7786 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
TI |
25+ |
TO-220 |
7786 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
Anaren |
24+ |
SMD |
5500 |
长期供应原装现货实单可谈 |
|||
TECCOR/LITT |
23+ |
TO-252 |
69820 |
终端可以免费供样,支持BOM配单! |
|||
HARRIS(哈利斯) |
20+ |
TO-220 |
3000 |
||||
HAR |
25+ |
RFP45N06LE |
13528 |
振宏微原装正品,假一罚百 |
|||
ROHM |
SOT89 |
9500 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
ROHM/罗姆 |
2450+ |
SOT89 |
8850 |
只做原装正品假一赔十为客户做到零风险!! |
|||
ROHM/罗姆 |
25+ |
SOT89 |
880000 |
明嘉莱只做原装正品现货 |
|||
ROHM |
25+ |
6000 |
只做原装鄙视假货15118075546 |
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RFP45N06LE规格书下载地址
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RFP45N06LE数据表相关新闻
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微型晶体的高度仅为 0.45 mm
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深圳市大唐盛世半导体有限公司 手 机:17727572380 。 电 话:0755-83226739 Q Q:626839837。 微信号:15096137729
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可立即发货
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DdatasheetPDF页码索引
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