型号 功能描述 生产厂家 企业 LOGO 操作
NVHL080N120SC1_V01

Silicon Carbide (SiC) MOSFET – 80 mohm, 1200V, M1, TO-247-3L

Features • Typ. RDS(on) = 80 m • Ultra Low Gate Charge (typ. QG(tot) = 56 nC) • Low Effective Output Capacitance (typ. Coss = 80 pF) • 100 UIL Tested • AEC−Q101 Qualified and PPAP Capable • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interc

ONSEMI

安森美半导体

Silicon Carbide (SiC) MOSFET – 80 mohm, 1200V, M1, D2PAK-7L

Features • Typ. RDS(on) = 80 m • Ultra Low Gate Charge (Typ. QG(tot) = 56 nC) • Low Effective Output Capacitance (Typ. Coss = 79 pF) • 100 Avalanche Tested • TJ = 175°C • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interconnection) Typic

ONSEMI

安森美半导体

Silicon Carbide (SiC) MOSFET – EliteSiC, 80 mohm, 1200V, M1, TO-247-3L

Features • Typ. RDS(on) = 80 m • Ultra Low Gate Charge (typ. QG(tot) = 56 nC) • Low Effective Output Capacitance (typ. Coss = 80 pF) • 100 UIL Tested • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interconnection) Typical Applications • U

ONSEMI

安森美半导体

Silicon Carbide (SiC) MOSFET – 80 mohm, 1200V, M1, D2PAK-7L

Features • Typ. RDS(on) = 80 m • Ultra Low Gate Charge (Typ. QG(tot) = 56 nC) • Low Effective Output Capacitance (Typ. Coss = 79 pF) • 100 Avalanche Tested • AEC−Q101 Qualified and PPAP Capable • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level

ONSEMI

安森美半导体

更新时间:2025-9-26 13:50:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
onsemi(安森美)
24+
TO247
7350
现货供应,当天可交货!免费送样,原厂技术支持!!!
ON(安森美)
24+
NA/
8735
原厂直销,现货供应,账期支持!
ON(安森美)
24+
TO-247
6000
全新原厂原装正品现货,低价出售,实单可谈
ON(安森美)
2405+
TO-247
50000
只做原装优势现货库存,渠道可追溯
ON(安森美)
2021/2022+
标准封装
8000
原厂原装现货订货价格优势终端BOM表可配单提供样品
ON Semiconductor
21+
TO-247-3
37800
进口原装!长期供应!绝对优势价格(诚信经营)!!
ON
25+
TO-247
2450
原厂原装,价格优势
ON(安森美)
2511
TO-247
4945
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价
ON(安森美)
25+
标准封装
8000
原装,请咨询
ON/安森美
23+
TO247
41186
原厂授权一级代理,专业海外优势订货,价格优势、品种

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