| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
MOS FIELD EFFECT TRANSISTOR DESCRIPTION The NP83P04PDG is P-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 5.3 mΩ MAX. (VGS = −10 V, ID = −41.5 A) RDS(on)2 = 8.0 mΩ MAX. (VGS = −4.5 V, ID = −41.5 A) • High current rating: I | NEC 瑞萨 |   | ||
Power MOSFETs for Automotive The NP83P04PDG is P-channel MOS Field Effect Transistor designed for high current switching applications. • Super low on-state resistance RDS(on)1 = 5.3 mΩ MAX. (VGS = −10 V, ID = −41.5 A) RDS(on)2 = 8.0 mΩ MAX. (VGS = −4.5 V, ID = −41.5 A)\n• High current rating: ID(DC) = ∓83 A; | RENESAS 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR DESCRIPTION The NP83P04PDG is P-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 5.3 mΩ MAX. (VGS = −10 V, ID = −41.5 A) RDS(on)2 = 8.0 mΩ MAX. (VGS = −4.5 V, ID = −41.5 A) • High current rating: I | NEC 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR DESCRIPTION The NP83P04PDG is P-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 5.3 mΩ MAX. (VGS = −10 V, ID = −41.5 A) RDS(on)2 = 8.0 mΩ MAX. (VGS = −4.5 V, ID = −41.5 A) • High current rating: I | NEC 瑞萨 | | ||
Power MOSFETs for Automotive The NP83P06PDG is P-channel MOS Field Effect Transistor designed for high current switching applications. • Super low on-state resistance RDS(on)1 = 8.8 mΩ MAX. (VGS = −10 V, ID = −41.5 A) RDS(on)2 = 12 mΩ MAX. (VGS = −4.5 V, ID = −41.5 A)\n• High current rating: ID(DC) = ∓83 A; | RENESAS 瑞萨 | | ||
-60V – -83A – P-channel Power MOS FET Application : Automotive Description This product is P-channel MOS Field Effect Transistor designed for high current switching applications. Features Super low on-state resistance : RDS(on) = 8.8 m Max. ( VGS = -10 V, ID = -41.5 A ) RDS(on) = 12 m Max. ( VGS = -4.5 V, ID = -41.5 A ) Low input capacitance : Ciss | RENESAS 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR DESCRIPTION The NP83P06PDG is P-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 8.8 mΩ MAX. (VGS = −10 V, ID = −41.5 A) RDS(on)2 = 12 mΩ MAX. (VGS = −4.5 V, ID = −41.5 A) • High current rating: ID | NEC 瑞萨 | | ||
-60V – -83A – P-channel Power MOS FET Application : Automotive Description This product is P-channel MOS Field Effect Transistor designed for high current switching applications. Features Super low on-state resistance : RDS(on) = 8.8 m Max. ( VGS = -10 V, ID = -41.5 A ) RDS(on) = 12 m Max. ( VGS = -4.5 V, ID = -41.5 A ) Low input capacitance : Ciss | RENESAS 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR DESCRIPTION The NP83P06PDG is P-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 8.8 mΩ MAX. (VGS = −10 V, ID = −41.5 A) RDS(on)2 = 12 mΩ MAX. (VGS = −4.5 V, ID = −41.5 A) • High current rating: ID | NEC 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR DESCRIPTION The NP83P06PDG is P-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 8.8 mΩ MAX. (VGS = −10 V, ID = −41.5 A) RDS(on)2 = 12 mΩ MAX. (VGS = −4.5 V, ID = −41.5 A) • High current rating: ID | NEC 瑞萨 | | ||
Product Scout Automotive 文件：5.67799 Mbytes Page：6 Pages | RENESAS 瑞萨 | | ||
SWITCHING P-CHANNEL POWER MOS FET 文件：299.5 Kbytes Page：9 Pages | RENESAS 瑞萨 | | ||
SWITCHING P-CHANNEL POWER MOS FET 文件：299.5 Kbytes Page：9 Pages | RENESAS 瑞萨 | | ||
SWITCHING P-CHANNEL POWER MOS FET 文件：299.5 Kbytes Page：9 Pages | RENESAS 瑞萨 | | ||
SWITCHING P-CHANNEL POWER MOSFET 文件：299.58 Kbytes Page：9 Pages | RENESAS 瑞萨 | | ||
SWITCHING P-CHANNEL POWER MOSFET 文件：299.58 Kbytes Page：9 Pages | RENESAS 瑞萨 | | ||
SWITCHING P-CHANNEL POWER MOSFET 文件：299.58 Kbytes Page：9 Pages | RENESAS 瑞萨 | |
NP83产品属性
- 类型
描述
- Channels (#)：
1
- Pkg. Type：
MP-25ZP
- VDSS (Max) (V)：
-40
- ID (A)：
-83
- RDS (ON)(Max) @10V or 8V (mohm)：
5.3
- RDS (ON) (Max) @ 4V or 4.5V or 5V (m ohm)：
8
- Pch (W)：
150
- VGSS：
20
- Vgs (off) (Max) (V)：
-2.5
- RDS (ON) (Typical) @ 10V / 8V (mohm)：
4.1
- Ciss (Typical) (pF)：
9820
- QG (nC) typ (nC)：
200
- Mounting Type：
Surface Mount
- Series Name：
NP Series
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NEC |
22+ |
SOT263 |
3000 |
原装正品,支持实单 |
|||
NEC |
25+ |
SOT-263 |
4500 |
全新原装、诚信经营、公司现货销售 |
|||
VBsemi |
25+ |
TO263 |
9000 |
只做原装正品 有挂有货 假一赔十 |
|||
VBsemi |
24+ |
TO263 |
5000 |
全新原装正品,现货销售 |
|||
NEC |
26+ |
原厂原封装 |
86720 |
全新原装进口现货价格优惠 本公司承诺原装正品假一赔 |
|||
NEC |
24+ |
TO-220AB |
8866 |
||||
NEC |
23+ |
SOT-263 |
7000 |
||||
VBsemi |
21+ |
TO263 |
10026 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
NEC |
TO-220 |
22+ |
6000 |
十年配单,只做原装 |
|||
Natlinear/南麟 |
25+ |
PDFN5*6-8L-A |
55000 |
原厂代理部份现货价优 |
NP83芯片相关品牌
NP83规格书下载地址
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NP83数据表相关新闻
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板机接口压力传感器
2019-9-10
DdatasheetPDF页码索引
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