位置：首页 > IC中文资料第8701页 > NP83P06PDG
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
NP83P06PDG | MOS FIELD EFFECT TRANSISTOR DESCRIPTION The NP83P06PDG is P-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 8.8 mΩ MAX. (VGS = −10 V, ID = −41.5 A) RDS(on)2 = 12 mΩ MAX. (VGS = −4.5 V, ID = −41.5 A) • High current rating: ID | NEC 瑞萨 |   | |
NP83P06PDG | -60V – -83A – P-channel Power MOS FET Application : Automotive Description This product is P-channel MOS Field Effect Transistor designed for high current switching applications. Features Super low on-state resistance : RDS(on) = 8.8 m Max. ( VGS = -10 V, ID = -41.5 A ) RDS(on) = 12 m Max. ( VGS = -4.5 V, ID = -41.5 A ) Low input capacitance : Ciss | RENESAS 瑞萨 | | |
NP83P06PDG | Power MOSFETs for Automotive | RENESAS 瑞萨 | | |
-60V – -83A – P-channel Power MOS FET Application : Automotive Description This product is P-channel MOS Field Effect Transistor designed for high current switching applications. Features Super low on-state resistance : RDS(on) = 8.8 m Max. ( VGS = -10 V, ID = -41.5 A ) RDS(on) = 12 m Max. ( VGS = -4.5 V, ID = -41.5 A ) Low input capacitance : Ciss | RENESAS 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR DESCRIPTION The NP83P06PDG is P-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 8.8 mΩ MAX. (VGS = −10 V, ID = −41.5 A) RDS(on)2 = 12 mΩ MAX. (VGS = −4.5 V, ID = −41.5 A) • High current rating: ID | NEC 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR DESCRIPTION The NP83P06PDG is P-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 8.8 mΩ MAX. (VGS = −10 V, ID = −41.5 A) RDS(on)2 = 12 mΩ MAX. (VGS = −4.5 V, ID = −41.5 A) • High current rating: ID | NEC 瑞萨 | | ||
SWITCHING P-CHANNEL POWER MOSFET 文件：299.58 Kbytes Page：9 Pages | RENESAS 瑞萨 | | ||
SWITCHING P-CHANNEL POWER MOSFET 文件：299.58 Kbytes Page：9 Pages | RENESAS 瑞萨 | | ||
SWITCHING P-CHANNEL POWER MOSFET 文件：299.58 Kbytes Page：9 Pages | RENESAS 瑞萨 | |
NP83P06PDG产品属性
- 类型
描述
- 型号
NP83P06PDG
- 制造商
NEC
- 制造商全称
NEC
- 功能描述
MOS FIELD EFFECT TRANSISTOR
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS/瑞萨 |
24+ |
NA/ |
66 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
原装 |
25+ |
TO-263 |
20300 |
原装特价NP83P06PDG-E1-AY即刻询购立享优惠#长期有货 |
|||
RENESAS/瑞萨 |
24+ |
TO263 |
880000 |
明嘉莱只做原装正品现货 |
|||
RENESAS/瑞萨 |
22+ |
TO-263 |
12500 |
瑞萨全系列在售,终端可出样品 |
|||
Renesas(瑞萨) |
23+ |
原厂封装 |
32078 |
10年以上分销商,原装进口件,服务型企业 |
|||
RENESAS/瑞萨 |
22+ |
TO263 |
12245 |
现货,原厂原装假一罚十! |
|||
RENESAS/瑞萨 |
21+ |
TO263 |
1709 |
||||
NATLINEAR/南麟 |
24+ |
SOT-523 |
30000 |
专营NATLINEAR南麟原装保障 |
|||
RENESAS/瑞萨 |
2023+ |
TO263 |
6893 |
十五年行业诚信经营,专注全新正品 |
|||
RENESAS |
25+23+ |
TO263 |
8657 |
绝对原装正品全新进口深圳现货 |
NP83P06PDG规格书下载地址
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DdatasheetPDF页码索引
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