MOS FIELD EFFECT TRANSISTOR

Description The NP50P03YDG is P-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance ⎯ RDS(on) = 8.4 mΩ MAX. (VGS = −10 V, ID = −25 A) • Low Ciss: Ciss = 2300 pF TYP. (VDS = −25 V, VGS = 0 V) • Designed for automotive app

Product Scout Automotive

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Power MOSFETs for Automotive

MOS FIELD EFFECT TRANSISTOR

Description The NP50P03YDG is P-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance ⎯ RDS(on) = 8.4 mΩ MAX. (VGS = −10 V, ID = −25 A) • Low Ciss: Ciss = 2300 pF TYP. (VDS = −25 V, VGS = 0 V) • Designed for automotive app

MOS FIELD EFFECT TRANSISTOR

Description The NP50P03YDG is P-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance ⎯ RDS(on) = 8.4 mΩ MAX. (VGS = −10 V, ID = −25 A) • Low Ciss: Ciss = 2300 pF TYP. (VDS = −25 V, VGS = 0 V) • Designed for automotive app

MOS FIELD EFFECT TRANSISTOR

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P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -30V, -47A, RDS(ON) =20mΩ @VGS = -10V. RDS(ON) =32mΩ @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 package.

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -30V, -47A, RDS(ON) =20mW @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. RDS(ON) =32mW @VGS = -4.5V. Lead free product is acquired.

P-Channel 30 V (D-S) MOSFET

文件：1.0229 Mbytes Page：8 Pages

P-Channel 30 V (D-S) MOSFET

文件：1.02287 Mbytes Page：8 Pages

P-Channel 30-V (D-S) MOSFET

文件：967.38 Kbytes Page：8 Pages