位置：首页 > IC中文资料第7724页 > NP32N055
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION These products are N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on)1 = 24 mΩ MAX. (VGS = 10 V, ID = 16 A) RDS(on)2 | RENESAS 瑞萨 |   | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 32A@ TC=25℃ ·Drain Source Voltage -VDSS= 55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 24mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 32A@ TC=25℃ ·Drain Source Voltage -VDSS= 55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 25mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION These products are N-Channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 25 mΩ MAX. (VGS = 10 V, ID = 16 A) • Low Cis | RENESAS 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION These products are N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Channel temperature 175 degree rating • Super low on-state resistance RDS(on)1 = 24 mΩ MAX. (VGS = 10 V, ID = 16 A) RDS(on)2 | RENESAS 瑞萨 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 32A@ TC=25℃ ·Drain Source Voltage -VDSS= 55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 24mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 32A@ TC=25℃ ·Drain Source Voltage -VDSS= 55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 24mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION These products are N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on)1 = 24 mΩ MAX. (VGS = 10 V, ID = 16 A) RDS(on)2 | RENESAS 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION These products are N-Channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 25 mΩ MAX. (VGS = 10 V, ID = 16 A) • Low Cis | RENESAS 瑞萨 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 32A@ TC=25℃ ·Drain Source Voltage -VDSS= 55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 25mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 32A@ TC=25℃ ·Drain Source Voltage -VDSS= 55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 24mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION These products are N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Channel temperature 175 degree rating • Super low on-state resistance RDS(on)1 = 24 mΩ MAX. (VGS = 10 V, ID = 16 A) RDS(on)2 | RENESAS 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION These products are N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on)1 = 24 mΩ MAX. (VGS = 10 V, ID = 16 A) RDS(on)2 | RENESAS 瑞萨 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 32A@ TC=25℃ ·Drain Source Voltage -VDSS= 55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 24mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 32A@ TC=25℃ ·Drain Source Voltage -VDSS= 55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 25mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION These products are N-Channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 25 mΩ MAX. (VGS = 10 V, ID = 16 A) • Low Cis | RENESAS 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION These products are N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Channel temperature 175 degree rating • Super low on-state resistance RDS(on)1 = 24 mΩ MAX. (VGS = 10 V, ID = 16 A) RDS(on)2 | RENESAS 瑞萨 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 32A@ TC=25℃ ·Drain Source Voltage -VDSS= 55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 24mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | ||
N-Channel 60 V (D-S) MOSFET 文件：960.08 Kbytes Page：7 Pages | VBSEMI 微碧半导体 | | ||
Power MOSFETs-Power MOSFETs for Automotive | RENESAS 瑞萨 | | ||
N-Channel 60 V (D-S) MOSFET 文件：960.08 Kbytes Page：7 Pages | VBSEMI 微碧半导体 | | ||
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE 文件：68.5 Kbytes Page：8 Pages | NEC 瑞萨 | | ||
SWITCHING N-CHANNEL POWER MOSFET 文件：297.9 Kbytes Page：9 Pages | RENESAS 瑞萨 | | ||
SWITCHING N-CHANNEL POWER MOSFET 文件：297.09 Kbytes Page：9 Pages | RENESAS 瑞萨 | | ||
Power MOSFETs-Power MOSFETs for Automotive | RENESAS 瑞萨 | | ||
SWITCHING N-CHANNEL POWER MOSFET 文件：295.72 Kbytes Page：9 Pages | RENESAS 瑞萨 | | ||
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE 文件：68.5 Kbytes Page：8 Pages | NEC 瑞萨 | | ||
N-Channel 6 0-V (D-S) MOSFET 文件：897.3 Kbytes Page：6 Pages | VBSEMI 微碧半导体 | | ||
Product Scout Automotive 文件：5.67799 Mbytes Page：6 Pages | RENESAS 瑞萨 | | ||
包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANSISTOR 分立半导体产品 晶体管 - FET，MOSFET - 单个 | ETC 知名厂家 | ETC | | |
Power MOSFETs-Power MOSFETs for Automotive | RENESAS 瑞萨 | | ||
Product Scout Automotive 文件：5.67799 Mbytes Page：6 Pages | RENESAS 瑞萨 | | ||
Product Scout Automotive 文件：5.67799 Mbytes Page：6 Pages | RENESAS 瑞萨 | | ||
N-Channel 60-V (D-S) MOSFET 文件：897.12 Kbytes Page：6 Pages | VBSEMI 微碧半导体 | | ||
包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANSISTOR 分立半导体产品 晶体管 - FET，MOSFET - 单个 | ETC 知名厂家 | ETC | |
NP32N055产品属性
- 类型
描述
- 型号
NP32N055
- 制造商
NEC
- 制造商全称
NEC
- 功能描述
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NEC |
2025+ |
TO252 |
3785 |
全新原厂原装产品、公司现货销售 |
|||
NEC |
25+ |
TO-252 |
4500 |
全新原装、诚信经营、公司现货销售 |
|||
恩XP |
20+ |
TO-252 |
63258 |
原装优势主营型号-可开原型号增税票 |
|||
VBsemi |
21+ |
TO252 |
10026 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
RENE |
2022+ |
TO-252 |
13754 |
原厂代理 终端免费提供样品 |
|||
RENE |
24+ |
TO-252 |
60000 |
全新原装现货 |
|||
恩XP |
TO-252 |
35500 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
VBsemi |
23+ |
TO252 |
50000 |
全新原装正品现货,支持订货 |
|||
VBsemi |
24+ |
TO252 |
9000 |
只做原装正品 有挂有货 假一赔十 |
|||
NEC |
23+ |
TO252 |
32958 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
NP32N055芯片相关品牌
NP32N055规格书下载地址
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NP32N055数据表相关新闻
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DdatasheetPDF页码索引
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