20 A, 400 V, N-Channel D2PAK

文件：114.36 Kbytes Page：8 Pages

Ignition IGBT

文件：144.89 Kbytes Page：7 Pages

20 A, 400 V, N-Channel D2PAK

Ignition IGBT

文件：144.89 Kbytes Page：7 Pages

Ignition IGBT 20 A, 400 V, N.Channel D2PAK

文件：124.89 Kbytes Page：8 Pages

封装/外壳：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB 包装：管件 描述：IGBT 440V 20A 150W D2PAK 分立半导体产品 晶体管 - UGBT、MOSFET - 单

Ignition IGBT

文件：144.89 Kbytes Page：7 Pages

20 A, 400 V, N-Channel D2PAK

文件：114.36 Kbytes Page：8 Pages

Ignition IGBT

文件：144.89 Kbytes Page：7 Pages

Ignition IGBT 20 A, 400 V, N.Channel D2PAK

文件：124.89 Kbytes Page：8 Pages

封装/外壳：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB 包装：管件 描述：IGBT 440V 20A 150W D2PAK 分立半导体产品 晶体管 - UGBT、MOSFET - 单

CATV AMPLIFIER MODULE

The RF Line CATV Amplifier Module Description • 24 Vdc Supply, 40 to 870 MHz, CATV Forward Amplifier Features • Specified for 77–, 110– and 128–Channel Loading • Excellent Distortion Performance • Silicon Bipolar Transistor Technology • Unconditionally Stable Under All Load Conditions App

SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features low feedback and output capacitances, re

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOSVI)

Lithium Ion Battery Applications Portable Equipment Applications Notebook PCs • 2.5-V Gate drive • Small footprint due to small and thin package • Low drain−source ON resistance : RDS (ON) = 41 mΩ (typ.) • High forward transfer admittance : |Yfs| = 9 S (typ.) • Low leakage current : IDSS =

500MHz Rail-to-Rail Amplifiers

文件：739.75 Kbytes Page：16 Pages

Switching Type(Self Oscillation Type with Coil)

文件：64.53 Kbytes Page：6 Pages