TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOSVI)

Lithium Ion Battery Applications Portable Equipment Applications Notebook PCs • 2.5-V Gate drive • Small footprint due to small and thin package • Low drain−source ON resistance : RDS (ON) = 41 mΩ (typ.) • High forward transfer admittance : |Yfs| = 9 S (typ.) • Low leakage current : IDSS =

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOSVI)

Digital electropneumatic process controller for integrated mounting on process control valves

The compact process controller device Type 8693 is optimised for integrated mounting on the pneumatic actuators in the Type 23xx/2103 process valve series and is specially designed for the requirements of a hygienic process environment. The actual value of the process factor is directly supplie

Digital electropneumatic Process Controller SideControl

The device Type 8793 digital process controller is designed with standardisation according to IEC 60534 - 6 - 1 or VDI/VDE 3845 (IEC 60534 - 6 - 2) for assembly to linear and rotary actuators. The variant with remote position sensor can also be used to control Bürkert process control valves. Th

pH- and ORP-probes

A probe Type 8203 is inserted into a Bürkert pH or ORP meter, which is a modular device designed for the measurement of: • the pH in clean liquids or liquids containing solids, sulphides or proteins. • the oxidation-reduction potential in clean liquids or liquids containing solids, sulphides o

T3/DS3/E3/STS-1 Input/Output Transformers

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MSD Blaster Coil

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