SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features low feedback and output capacitances, re

11 watt; Mini Spiral Compact Fluorescent; 2700K; 82 CRI; GU24 base; 120 volts

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VDMOS SHORTFORM S1

Ceramic Singlelayer DC Disc Capacitors for General Purpose

FEATURES • High capacitance with small size • High stability • Crimp and straight lead styles • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Temperature compensation • Coupling and decoupling • Bypassing

RF POWER VDMOS TRANSISTOR

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CATV AMPLIFIER MODULE

The RF Line CATV Amplifier Module Description • 24 Vdc Supply, 40 to 870 MHz, CATV Forward Amplifier Features • Specified for 77–, 110– and 128–Channel Loading • Excellent Distortion Performance • Silicon Bipolar Transistor Technology • Unconditionally Stable Under All Load Conditions App

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOSVI)

Lithium Ion Battery Applications Portable Equipment Applications Notebook PCs • 2.5-V Gate drive • Small footprint due to small and thin package • Low drain−source ON resistance : RDS (ON) = 41 mΩ (typ.) • High forward transfer admittance : |Yfs| = 9 S (typ.) • Low leakage current : IDSS =

500MHz Rail-to-Rail Amplifiers

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Switching Type(Self Oscillation Type with Coil)

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