位置：首页 > IC中文资料第11607页 > NESG220034
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
NESG220034 | NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN POWER MINIMOLD (34 PKG) NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN POWER MINIMOLD (34 PKG) FEATURES • The device is an ideal choice for low noise, low distortion amplification. NF = 0.7 dB TYP. @ VCE = 5 V, IC = 10 mA, f = 1 GHz • PO (1 dB) = 22.5 dBm TYP. @ VCE = 5 V, IC | NEC 瑞萨 |   | |
NESG220034 | NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN POWER MINIMOLD (34 PKG) NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN POWER MINIMOLD (34 PKG) FEATURES • The device is an ideal choice for low noise, low distortion amplification. NF = 0.7 dB TYP. @ VCE = 5 V, IC = 10 mA, f = 1 GHz • PO (1 dB) = 22.5 dBm TYP. @ VCE = 5 V, IC | RENESAS 瑞萨 | | |
NESG220034 | NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN POWER MINIMOLD (34 PKG) | RENESAS 瑞萨 | | |
NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN POWER MINIMOLD (34 PKG) NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN POWER MINIMOLD (34 PKG) FEATURES • The device is an ideal choice for low noise, low distortion amplification. NF = 0.7 dB TYP. @ VCE = 5 V, IC = 10 mA, f = 1 GHz • PO (1 dB) = 22.5 dBm TYP. @ VCE = 5 V, IC | NEC 瑞萨 | | ||
NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN POWER MINIMOLD (34 PKG) NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN POWER MINIMOLD (34 PKG) FEATURES • The device is an ideal choice for low noise, low distortion amplification. NF = 0.7 dB TYP. @ VCE = 5 V, IC = 10 mA, f = 1 GHz • PO (1 dB) = 22.5 dBm TYP. @ VCE = 5 V, IC | NEC 瑞萨 | | ||
NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN POWER MINIMOLD (34 PKG) NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN POWER MINIMOLD (34 PKG) FEATURES • The device is an ideal choice for low noise, low distortion amplification. NF = 0.7 dB TYP. @ VCE = 5 V, IC = 10 mA, f = 1 GHz • PO (1 dB) = 22.5 dBm TYP. @ VCE = 5 V, IC | RENESAS 瑞萨 | | ||
NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN POWER MINIMOLD (34 PKG) NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN POWER MINIMOLD (34 PKG) FEATURES • The device is an ideal choice for low noise, low distortion amplification. NF = 0.7 dB TYP. @ VCE = 5 V, IC = 10 mA, f = 1 GHz • PO (1 dB) = 22.5 dBm TYP. @ VCE = 5 V, IC | NEC 瑞萨 | | ||
RF & Microwave device 文件：137.58 Kbytes Page：2 Pages | RENESAS 瑞萨 | |
NESG220034产品属性
- 类型
描述
- 型号
NESG220034
- 制造商
RENESAS
- 制造商全称
Renesas Technology Corp
- 功能描述
NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN POWER MINIMOLD(34 PKG)
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS |
24+ |
SOT-23 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
RENESAS/瑞萨 |
2026+ |
SOT-23 |
65428 |
百分百原装现货 实单必成 |
|||
RENESAS/瑞萨 |
22+ |
SOT-89 |
20000 |
只做原装 |
|||
RENESAS |
24+ |
SOT-23 |
25000 |
一级专营品牌全新原装热卖 |
|||
SOT-23 |
23+ |
NA |
15659 |
振宏微专业只做正品,假一罚百! |
|||
RENESAS/瑞萨 |
2450+ |
SOT23-3 |
6540 |
只做原装正品现货或订货!终端客户免费申请样品! |
|||
RENESAS |
24+ |
N/A |
8000 |
全新原装正品,现货销售 |
|||
RENESAS |
NA |
8560 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
RENESAS |
2511 |
SOT-23 |
1612 |
电子元器件采购降本30%!原厂直采,砍掉中间差价 |
|||
RENESAS/瑞萨 |
2025+ |
SOT-89 |
5000 |
原装进口价格优 请找坤融电子! |
NESG220034规格书下载地址
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