NPN SiGe RF TRANSISTOR FOR

UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION

3-PIN POWER MINIMOLD (34 PKG)

FEATURES

• The device is an ideal choice for low noise, low distortion amplification.

NF = 0.7 dB TYP. @ VCE = 5 V, IC = 10 mA, f = 1 GHz

• PO (1 dB) = 22.5 dBm TYP. @ VCE = 5 V, IC (set) = 40 mA, f = 1 GHz

• OIP3 = 35 dBm TYP. @ VCE = 5 V, IC (set) = 40 mA, f = 1 GHz

• Maximum stable power gain: MSG =12.5 dB TYP. @ VCE = 5 V, IC = 40 mA, f = 1 GHz

• SiGe HBT technology (UHS2) : fT = 11.5 GHz

• This product is improvement of ESD of NESG2xxx series.

• 3-pin power minimold (34 PKG)