型号 功能描述 生产厂家 企业 LOGO 操作
NESG220034-T1

NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN POWER MINIMOLD (34 PKG)

NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN POWER MINIMOLD (34 PKG) FEATURES • The device is an ideal choice for low noise, low distortion amplification. NF = 0.7 dB TYP. @ VCE = 5 V, IC = 10 mA, f = 1 GHz • PO (1 dB) = 22.5 dBm TYP. @ VCE = 5 V, IC

NEC

瑞萨

NESG220034-T1

NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN POWER MINIMOLD (34 PKG)

NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN POWER MINIMOLD (34 PKG) FEATURES • The device is an ideal choice for low noise, low distortion amplification. NF = 0.7 dB TYP. @ VCE = 5 V, IC = 10 mA, f = 1 GHz • PO (1 dB) = 22.5 dBm TYP. @ VCE = 5 V, IC

RENESAS

瑞萨

NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN POWER MINIMOLD (34 PKG)

NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN POWER MINIMOLD (34 PKG) FEATURES • The device is an ideal choice for low noise, low distortion amplification. NF = 0.7 dB TYP. @ VCE = 5 V, IC = 10 mA, f = 1 GHz • PO (1 dB) = 22.5 dBm TYP. @ VCE = 5 V, IC

NEC

瑞萨

NESG220034-T1产品属性

  • 类型

    描述

  • 型号

    NESG220034-T1

  • 制造商

    RENESAS

  • 制造商全称

    Renesas Technology Corp

  • 功能描述

    NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN POWER MINIMOLD(34 PKG)

更新时间:2025-10-29 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
RENESAS/瑞萨
24+
NA/
7218
优势代理渠道,原装正品,可全系列订货开增值税票
RENESAS
24+
SOT-23
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
RENESAS
11+
SOT-23
1612
一级代理,专注军工、汽车、医疗、工业、新能源、电力
NEC
20+
SOT23
49000
原装优势主营型号-可开原型号增税票
RENESAS/瑞萨
25+
SOT-23
65428
百分百原装现货 实单必成
NEC
22+
SOT-89
100000
代理渠道/只做原装/可含税
RENESAS
原厂封装
9800
原装进口公司现货假一赔百
SOT-23
23+
NA
15659
振宏微专业只做正品,假一罚百!
NEC
21+
SOT23
10000
原装现货假一罚十
RENESAS/瑞萨
2450+
SOT23-3
6540
只做原装正品现货或订货!终端客户免费申请样品!

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