位置:首页 > IC中文资料第6696页 > NESG220033

型号 功能描述 生产厂家 企业 LOGO 操作
NESG220033

NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOLD (33 PKG)

NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOLD (33 PKG) FEATURES • The device is an ideal choice for low noise, low distortion amplification. NF = 0.75 dB TYP. @ VCE = 5 V, IC = 10 mA, f = 1 GHz • PO (1 dB) = 21.5 dBm TYP. @ VCE = 5 V, IC (set) =

NEC

瑞萨

NESG220033

NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOLD (33 PKG)

NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOLD (33 PKG) FEATURES • The device is an ideal choice for low noise, low distortion amplification. NF = 0.75 dB TYP. @ VCE = 5 V, IC = 10 mA, f = 1 GHz • PO (1 dB) = 21.5 dBm TYP. @ VCE = 5 V, IC (set) =

RENESAS

瑞萨

NESG220033

NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOLD (33 PKG)

RENESAS

瑞萨

NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOLD (33 PKG)

NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOLD (33 PKG) FEATURES • The device is an ideal choice for low noise, low distortion amplification. NF = 0.75 dB TYP. @ VCE = 5 V, IC = 10 mA, f = 1 GHz • PO (1 dB) = 21.5 dBm TYP. @ VCE = 5 V, IC (set) =

NEC

瑞萨

NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOLD (33 PKG)

NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOLD (33 PKG) FEATURES • The device is an ideal choice for low noise, low distortion amplification. NF = 0.75 dB TYP. @ VCE = 5 V, IC = 10 mA, f = 1 GHz • PO (1 dB) = 21.5 dBm TYP. @ VCE = 5 V, IC (set) =

NEC

瑞萨

NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOLD (33 PKG)

NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOLD (33 PKG) FEATURES • The device is an ideal choice for low noise, low distortion amplification. NF = 0.75 dB TYP. @ VCE = 5 V, IC = 10 mA, f = 1 GHz • PO (1 dB) = 21.5 dBm TYP. @ VCE = 5 V, IC (set) =

RENESAS

瑞萨

NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOLD (33 PKG)

NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOLD (33 PKG) FEATURES • The device is an ideal choice for low noise, low distortion amplification. NF = 0.75 dB TYP. @ VCE = 5 V, IC = 10 mA, f = 1 GHz • PO (1 dB) = 21.5 dBm TYP. @ VCE = 5 V, IC (set) =

NEC

瑞萨

SPARK QUENCHER

OKAYA

SPARK QUENCHER

SPARK QUENCHER Features Rated voltage 250VAC, compact size Applications Suppressing noise occuring world wide Automatic machines and Office appliances.

OKAYA

SPARK QUENCHER

文件:76.76 Kbytes Page:1 Pages

OKAYA

NESG220033产品属性

  • 类型

    描述

  • 型号

    NESG220033

  • 制造商

    RENESAS

  • 制造商全称

    Renesas Technology Corp

  • 功能描述

    NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOLD(33 PKG)

更新时间:2026-8-3 16:24:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
RENESAS/瑞萨
2450+
SOT23-3
8850
只做原装正品假一赔十为客户做到零风险!!
RENEASA
23+
SOT-23
5472
原厂原装正品
RENEASA
26+
SOT-23
360000
进口原装现货
RENESAS/瑞萨
2025+
SOT-23
5000
原装进口价格优 请找坤融电子!
RENEASA
22+
SOT-23
20000
公司只做原装 品质保障
RENEASA
25+
SOT-23
20000
原装
Renesas(瑞萨)
25+
封装
500000
源自原厂成本,高价回收工厂呆滞
RENEASA
2511
SOT-23
2972
电子元器件采购降本30%!原厂直采,砍掉中间差价
RENEASA
1512+
SOT-23
2972
一级代理,专注军工、汽车、医疗、工业、新能源、电力
RENEASA
2023+
SOT-23
8800
正品渠道现货 终端可提供BOM表配单。

NESG220033数据表相关新闻