型号 功能描述 生产厂家&企业 LOGO 操作
NESG220033-T1B-A

NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOLD (33 PKG)

NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOLD (33 PKG) FEATURES • The device is an ideal choice for low noise, low distortion amplification. NF = 0.75 dB TYP. @ VCE = 5 V, IC = 10 mA, f = 1 GHz • PO (1 dB) = 21.5 dBm TYP. @ VCE = 5 V, IC (set) =

NEC

瑞萨

NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOLD (33 PKG)

NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOLD (33 PKG) FEATURES • The device is an ideal choice for low noise, low distortion amplification. NF = 0.75 dB TYP. @ VCE = 5 V, IC = 10 mA, f = 1 GHz • PO (1 dB) = 21.5 dBm TYP. @ VCE = 5 V, IC (set) =

NEC

瑞萨

NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOLD (33 PKG)

NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOLD (33 PKG) FEATURES • The device is an ideal choice for low noise, low distortion amplification. NF = 0.75 dB TYP. @ VCE = 5 V, IC = 10 mA, f = 1 GHz • PO (1 dB) = 21.5 dBm TYP. @ VCE = 5 V, IC (set) =

RENESAS

瑞萨

NESG220033-T1B-A产品属性

  • 类型

    描述

  • 型号

    NESG220033-T1B-A

  • 制造商

    NEC

  • 制造商全称

    NEC

  • 功能描述

    NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOLD(33 PKG)

更新时间:2025-8-14 18:06:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
NEC
20+
SOT23
49000
原装优势主营型号-可开原型号增税票
RENESAS
23+
NA
19854
专业电子元器件供应链正迈科技特价代理特价,原装元器件供应,支持开发样品
RENESAS
24+
SOT-23
25000
一级专营品牌全新原装热卖
SOT-23
23+
NA
15659
振宏微专业只做正品,假一罚百!
NEC
22+
SOT23
25000
只有原装原装,支持BOM配单
RENESAS/瑞萨
24+
NA/
7218
优势代理渠道,原装正品,可全系列订货开增值税票
RENESAS/瑞萨
2450+
SOT23-3
6540
只做原装正品现货或订货!终端客户免费申请样品!
RENESAS/瑞萨
23+
SC-59
27000
原厂授权一级代理,专业海外优势订货,价格优势、品种
RENESAS
NA
8560
一级代理 原装正品假一罚十价格优势长期供货
RENESAS
24+
N/A
8000
全新原装正品,现货销售

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