型号 功能描述 生产厂家 企业 LOGO 操作
NESG220033-A

NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOLD (33 PKG)

NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOLD (33 PKG) FEATURES • The device is an ideal choice for low noise, low distortion amplification. NF = 0.75 dB TYP. @ VCE = 5 V, IC = 10 mA, f = 1 GHz • PO (1 dB) = 21.5 dBm TYP. @ VCE = 5 V, IC (set) =

NEC

瑞萨

NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOLD (33 PKG)

NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOLD (33 PKG) FEATURES • The device is an ideal choice for low noise, low distortion amplification. NF = 0.75 dB TYP. @ VCE = 5 V, IC = 10 mA, f = 1 GHz • PO (1 dB) = 21.5 dBm TYP. @ VCE = 5 V, IC (set) =

NEC

瑞萨

NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOLD (33 PKG)

NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOLD (33 PKG) FEATURES • The device is an ideal choice for low noise, low distortion amplification. NF = 0.75 dB TYP. @ VCE = 5 V, IC = 10 mA, f = 1 GHz • PO (1 dB) = 21.5 dBm TYP. @ VCE = 5 V, IC (set) =

RENESAS

瑞萨

SPARK QUENCHER

OKAYA

SPARK QUENCHER

文件:76.76 Kbytes Page:1 Pages

OKAYA

NESG220033-A产品属性

  • 类型

    描述

  • 型号

    NESG220033-A

  • 制造商

    NEC

  • 制造商全称

    NEC

  • 功能描述

    NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOLD(33 PKG)

更新时间:2025-10-29 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
RENESAS/瑞萨
24+
NA/
7218
优势代理渠道,原装正品,可全系列订货开增值税票
RENESAS
24+
SOT-23
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
RENEASA
1512+
SOT-23
2972
一级代理,专注军工、汽车、医疗、工业、新能源、电力
NEC
20+
SOT23
49000
原装优势主营型号-可开原型号增税票
NEC
22+
SOT-89
100000
代理渠道/只做原装/可含税
RENESAS
原厂封装
9800
原装进口公司现货假一赔百
SOT-23
23+
NA
15659
振宏微专业只做正品,假一罚百!
NEC
21+
SOT23
10000
原装现货假一罚十
RENESAS/瑞萨
2450+
SOT23-3
8850
只做原装正品假一赔十为客户做到零风险!!
RENEASA
23+
SOT-23
5472
原厂原装正品

NESG220033-A数据表相关新闻