位置：首页 > IC中文资料第6162页 > NE760
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
NE760 | LOW NOISE KU-K BAND GAAS MESFET 文件：276.35 Kbytes Page：7 Pages | NEC 瑞萨 |   | |
NE760 | LOW NOISE KU-K BAND GAAS MESFET | RENESAS 瑞萨 | | |
GaAs MES FET C to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET FEATURES • Low noise figure NF = 1.6 dB TYP. at f = 12 GHz • High associated gain Ga = 9.0 dB TYP. at f = 12 GHz • Gate length: Lg = 0.3 Pm • Gate width: Wg = 280 Pm | RENESAS 瑞萨 | | ||
GaAs MES FET GENERAL PURPOSE N-CHANNEL GaAs MES FET DESCRIPTION NE76038 is a N-channel GaAs MES FET housed in plastic package. The device is fabricated by ion implantation for improved RF and DC performance reliability and uniformity. Its excellent low noise and high associated gain make it suitable fo | RENESAS 瑞萨 | | ||
GaAs MES FET GENERAL PURPOSE N-CHANNEL GaAs MES FET DESCRIPTION NE76038 is a N-channel GaAs MES FET housed in plastic package. The device is fabricated by ion implantation for improved RF and DC performance reliability and uniformity. Its excellent low noise and high associated gain make it suitable fo | RENESAS 瑞萨 | | ||
GaAs MES FET GENERAL PURPOSE N-CHANNEL GaAs MES FET DESCRIPTION NE76038 is a N-channel GaAs MES FET housed in plastic package. The device is fabricated by ion implantation for improved RF and DC performance reliability and uniformity. Its excellent low noise and high associated gain make it suitable fo | RENESAS 瑞萨 | | ||
GaAs MES FET C to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET FEATURES • Low noise figure NF = 1.6 dB TYP. at f = 12 GHz (NE76083A) NF = 2.4 dB MAX. at f = 12 GHz (NE76083A-2.4) • High associated gain Ga = 9.0 dB TYP. at f = 12 GHz (NE76083A) Ga = 9.0 dB TYP. at f = 12 GHz (NE76083A-2.4) • Ga | RENESAS 瑞萨 | | ||
GaAs MES FET C to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET FEATURES • Low noise figure & High associated gain NF = 1.6 dB TYP., Ga = 9.0 dB TYP. at f = 12 GHz • Gate length: Lg = 0.3 mm • Gate width : Wg = 280 mm | RENESAS 瑞萨 | | ||
C to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N | NEC 瑞萨 | | ||
C to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N | NEC 瑞萨 | | ||
GaAs MES FET C to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET FEATURES • Low noise figure & High associated gain NF = 1.6 dB TYP., Ga = 9.0 dB TYP. at f = 12 GHz • Gate length: Lg = 0.3 mm • Gate width : Wg = 280 mm | RENESAS 瑞萨 | | ||
GaAs MES FET C to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET FEATURES • Low noise figure & High associated gain NF = 1.6 dB TYP., Ga = 9.0 dB TYP. at f = 12 GHz • Gate length: Lg = 0.3 mm • Gate width : Wg = 280 mm | RENESAS 瑞萨 | | ||
C to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N | NEC 瑞萨 | | ||
GaAs MES FET C to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET FEATURES • Low noise figure & High associated gain NF = 1.6 dB TYP., Ga = 9.0 dB TYP. at f = 12 GHz • Gate length: Lg = 0.3 mm • Gate width : Wg = 280 mm | RENESAS 瑞萨 | | ||
C to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N | NEC 瑞萨 | | ||
LOW NOISE L TO Ku BAND GaAs MESFET 文件：52.25 Kbytes Page：6 Pages | NEC 瑞萨 | | ||
LOW NOISE L TO Ku BAND GaAs MESFET 文件：52.25 Kbytes Page：6 Pages | NEC 瑞萨 | | ||
LOW NOISE L TO Ku-BAND GaAs MESFET 文件：40.36 Kbytes Page：6 Pages | NEC 瑞萨 | | ||
LOW NOISE L TO Ku-BAND GaAs MESFET | RENESAS 瑞萨 | | ||
LOW NOISE L TO Ku-BAND GaAs MESFET 文件：40.36 Kbytes Page：6 Pages | NEC 瑞萨 | | ||
C to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET | RENESAS 瑞萨 | | ||
LOW NOISE L TO Ku BAND GaAs MESFET 文件：42.76 Kbytes Page：4 Pages | NEC 瑞萨 | | ||
LOW NOISE L TO Ku BAND GaAs MESFET 文件：42.76 Kbytes Page：4 Pages | NEC 瑞萨 | | ||
STATIC SEALS DESCRIPTION The BECA 760 is a symmetrical dynamic and static facial effect U-seal, made from PTFE (different filling options) with lips that are pre-stressed by a spring. Derived from the BECA 760 profile, the BECA 769 profile is made specially for food industry applications. The V-spring | FRANCEJOINT | | ||
Premium Male/Male Jumper Wires - 40 x 12 (300mm) 文件：220.52 Kbytes Page：2 Pages | ADAFRUIT | | ||
SIMPLE ECONOMIC ELECTRONIC METER CONTROL 文件：256.1 Kbytes Page：2 Pages | PENTAIR 滨特尔 | | ||
WIRE & CABLE TERMINATION 文件：3.92843 Mbytes Page：50 Pages | GREENLEE | | ||
MINIA TURE LOCKING POWER PLUGS 文件：65.56 Kbytes Page：1 Pages | SWITCH | |
NE760产品属性
- 类型
描述
- 型号
NE760
- 制造商
NEC
- 制造商全称
NEC
- 功能描述
LOW NOISE KU-K BAND GAAS MESFET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NEC |
24+ |
XX |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
NEC |
2023+ |
SMT38 |
8635 |
一级代理优势现货,全新正品直营店 |
|||
NEC |
24+ |
20000 |
全新原厂原装，进口正品现货，正规渠道可含税！！ |
||||
NEC |
16+ |
SMT86 |
1286 |
原装现货支持BOM配单服务 |
|||
NEC |
07+ |
SMT38 |
880000 |
明嘉莱只做原装正品现货 |
|||
NE76038-T1 |
25+ |
620 |
620 |
||||
NEC |
2016+ |
SMT36 |
7202 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
NEC |
24+ |
24000 |
宇航级进口原装正品现货质量保证! |
||||
NEC |
08+ |
原厂封装 |
24000 |
宇航IC只做原装假一罚十 |
|||
NEC |
23+ |
TO-59 |
8510 |
原装正品代理渠道价格优势 |
NE760规格书下载地址
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NE760数据表相关新闻
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进口代理
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2023-3-16NE5568-交换式电源控制器
描述 该NE5568是一个使用的开关式电源控制电路供应。它包含一个内部温度补偿的供应，脉宽调制，锯齿振荡器，过电流检测锁存和输出阶段。该装置适用于低成本开关电源的应用场合广泛的看家功能不是必需的。是的NE5568作者：NE5561所选版本。 特征 •微小型（四）包 •脉宽调制器 •电流限制（按周期循环） •锯齿波发生器 •稳压电源 •双脉冲防护 •内部温度补偿基准
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描述 NE57811目的是提供一个终止的权力双数据速率（DDR）SDRAM内存总线。它显着减少元件数量，电路板空间和整体系统成本比以前的解决方案。NE57811 DDR终端稳压器维持输出RAM的电压（DDR参考总线电压）的一半，电源电压。它是能够提供高达± 3.5一个持续时期。过流限制保护从浪涌NE57811启动电流和过热关断保护在极端温度情况下的设备。SPAK - 5（SOT756）包热强大的灵活性散热设计。由于NE57811是一个线性稳压器，没有外部电感器或开关场效应管是必要的。响应速度快负载的变化，降低输出电容器的需求。 特点
2013-1-14NE56631-30D-低有效的系统复位
NE56631- XX是一个家庭的低有效，上电复位内提供±3％及超精密的阈值电压检测低工作电源电流通常为1.5毫安。几种检测阈值电压可在1.9 V，2.0 V，为2.7 V，2.8 V，2.9 V，3.0 V，3.1 V，4.2 V，4.3 V，4.4 V，4.5 V，4.6 V。根据要求提供其它阈值从100 mV的步长1.9 V至4.6 V。随着它的超低电源电流和高精密电压阈值NE56631- XX的检测能力，非常适合各种如复位逻辑电路和电池供电应用微处理器，电压检查和检测水平。 应用 •复位微处理器和逻辑电路 •电压
2012-11-18
DdatasheetPDF页码索引
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