GENERAL PURPOSE N-CHANNEL GaAs MES FET

DESCRIPTION

NE76038 is a N-channel GaAs MES FET housed in

plastic package. The device is fabricated by ion implantation

for improved RF and DC performance reliability and uniformity.

Its excellent low noise and high associated gain make

it suitable for MMDS, TVRO, GPS and another commercial

systems.

The surface of the device, except bonding pads, is

passivated with SiO2 and SiN4 for scratch protection as well

as surface stability.

FEATURES

• Low noise figure & High associated gain

NF = 1.7 dB TYP., Ga = 7.5 dB TYP. at f = 12 GHz

• 0.3 mm recessed gate

• Plastic package

• Tape & Reel Packaging only Available