型号 功能描述 生产厂家&企业 LOGO 操作
5510279A

3.5 V OPERATION SILICON RF POWER MOSFET FOR GSM1800 TRANSMISSION AMPLIFIERS

文件:390.95 Kbytes Page:4 Pages

NEC

瑞萨

SILICON POWER MOS FET

4.8 V OPERATION SILICON RF POWER LDMOS FET FOR 1.8 GHz 2 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5510279A is an N-channel silicon power MOS FET specially designed as the transmission power amplifier for 4.8 V GSM 1 800 handsets. Dies are manufactured using our NEWMOS technology (our 0.6

RENESAS

瑞萨

3.5 V OPERATION SILICON RF POWER MOSFET FOR GSM1800 TRANSMISSION AMPLIFIERS

文件:42.44 Kbytes Page:5 Pages

CEL

California Eastern Labs

3.5V OPERATION SILICON RF POWER MOSFET FOR GSM1800 TRANSMISSION AMPLIFIERS

文件:39.5 Kbytes Page:5 Pages

NEC

瑞萨

5510279A产品属性

  • 类型

    描述

  • 型号

    5510279A

  • 制造商

    NEC

  • 制造商全称

    NEC

  • 功能描述

    3.5 V OPERATION SILICON RF POWER MOSFET FOR GSM1800 TRANSMISSION AMPLIFIERS

更新时间:2025-8-8 16:20:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
55102-G36-12
700
700
FCI-BERG
3823
全新原装 货期两周
Amphenol/安费诺
24+
27915
原厂现货渠道
24+
N/A
64000
一级代理-主营优势-实惠价格-不悔选择
7186
原装现货

5510279A数据表相关新闻