X to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

DESCRIPTION The NE4210S01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and associated gain make it suitable for DBS and another commercial systems. FEATURES • Super Low Noise Figure & High Associated Gain NF = 0.5 dB T

SUPER LOW NOISE HJ FET

DESCRIPTION NECS NE4210S01 is a pseudomorphic Hetero-Junction FET that uses the junction between Si-doped AIGaAs and undoped InGaAs to create very high mobility electrons. The device features mushroom shaped TiAl gates for decreased gate resistance and improved power handling. Its excellent low n

HETERO JUNCTION FIELD EFFECT TRANSISTOR

DESCRIPTION The NE4210S01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and associated gain make it suitable for DBS and another commercial systems. FEATURES • Super Low Noise Figure & High Associated Gain NF = 0.5 dB TYP.

HETERO JUNCTION FIELD EFFECT TRANSISTOR

DESCRIPTION The NE4210S01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and associated gain make it suitable for DBS and another commercial systems. FEATURES • Super Low Noise Figure & High Associated Gain NF = 0.5 dB TYP.

X to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

DESCRIPTION The NE4210S01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and associated gain make it suitable for DBS and another commercial systems. FEATURES • Super Low Noise Figure & High Associated Gain NF = 0.5 dB T

SUPER LOW NOISE HJ FET

DESCRIPTION NECS NE4210S01 is a pseudomorphic Hetero-Junction FET that uses the junction between Si-doped AIGaAs and undoped InGaAs to create very high mobility electrons. The device features mushroom shaped TiAl gates for decreased gate resistance and improved power handling. Its excellent low n

X to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

DESCRIPTION The NE4210S01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and associated gain make it suitable for DBS and another commercial systems. FEATURES • Super Low Noise Figure & High Associated Gain NF = 0.5 dB T

SUPER LOW NOISE HJ FET

DESCRIPTION NECS NE4210S01 is a pseudomorphic Hetero-Junction FET that uses the junction between Si-doped AIGaAs and undoped InGaAs to create very high mobility electrons. The device features mushroom shaped TiAl gates for decreased gate resistance and improved power handling. Its excellent low n

HETERO JUNCTION FIELD EFFECT TRANSISTOR

DESCRIPTION The NE4210S01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and associated gain make it suitable for DBS and another commercial systems. FEATURES • Super Low Noise Figure & High Associated Gain NF = 0.5 dB TYP.

封装/外壳：4-SMD 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：HJ-FET 13DB S01 分立半导体产品 晶体管 - FET，MOSFET - 射频

SUPER LOW NOISE HJ FET

封装/外壳：4-SMD 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：HJ-FET 13DB S01 分立半导体产品 晶体管 - FET，MOSFET - 射频

SPDT UltraCMOS??RF Switch DC - 3000 MHz

Product Description The PE4210 UltraCMOS™ RF Switch is designed to cover a broad range of applications from near DC to 3000 MHz. This single-supply switch integrates on-board CMOS control logic driven by a simple, single-pin CMOS or TTL compatible control input. Using a nominal +3-volt power supp

Nylon Wire Harness Clamps

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OPTICS CATALOGUE

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Nylon Wire Harness Clamps

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4200A-SCS Parameter Analyzer

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