位置：首页 > IC中文资料第974页 > NE4210S01-T1
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
NE4210S01-T1 | SUPER LOW NOISE HJ FET DESCRIPTION NECS NE4210S01 is a pseudomorphic Hetero-Junction FET that uses the junction between Si-doped AIGaAs and undoped InGaAs to create very high mobility electrons. The device features mushroom shaped TiAl gates for decreased gate resistance and improved power handling. Its excellent low n | CEL |   | |
NE4210S01-T1 | HETERO JUNCTION FIELD EFFECT TRANSISTOR DESCRIPTION The NE4210S01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and associated gain make it suitable for DBS and another commercial systems. FEATURES • Super Low Noise Figure & High Associated Gain NF = 0.5 dB TYP. | RENESAS 瑞萨 | | |
NE4210S01-T1 | X to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE4210S01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and associated gain make it suitable for DBS and another commercial systems. FEATURES • Super Low Noise Figure & High Associated Gain NF = 0.5 dB T | NEC 瑞萨 | | |
X to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE4210S01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and associated gain make it suitable for DBS and another commercial systems. FEATURES • Super Low Noise Figure & High Associated Gain NF = 0.5 dB T | NEC 瑞萨 | | ||
SUPER LOW NOISE HJ FET DESCRIPTION NECS NE4210S01 is a pseudomorphic Hetero-Junction FET that uses the junction between Si-doped AIGaAs and undoped InGaAs to create very high mobility electrons. The device features mushroom shaped TiAl gates for decreased gate resistance and improved power handling. Its excellent low n | CEL | | ||
HETERO JUNCTION FIELD EFFECT TRANSISTOR DESCRIPTION The NE4210S01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and associated gain make it suitable for DBS and another commercial systems. FEATURES • Super Low Noise Figure & High Associated Gain NF = 0.5 dB TYP. | RENESAS 瑞萨 | | ||
封装/外壳：4-SMD 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：HJ-FET 13DB S01 分立半导体产品 晶体管 - FET，MOSFET - 射频 | CEL | |
NE4210S01-T1产品属性
- 类型
描述
- 型号
NE4210S01-T1
- 制造商
Renesas Electronics Corporation
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS(瑞萨)/IDT |
24+ |
SMD |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
|||
RENESAS/瑞萨 |
24+ |
NA/ |
1000 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
RENESAS |
2016+ |
SMT-86 |
6000 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
RENESAS |
18+ |
SMT-86 |
3500 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
RENESAS/瑞萨 |
25+ |
SMT86 |
18200 |
RENESAS/瑞萨原装特价NE4210S01-T1B-A即刻询购立享优惠#长期有货 |
|||
RENESAS |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
RENESAS/瑞萨 |
24+ |
STM86 |
880000 |
明嘉莱只做原装正品现货 |
|||
RENESAS |
23+ |
SMT-86 |
50000 |
只做原装正品 |
|||
RENESAS |
24+ |
TO-50 |
8000 |
原厂原装，价格优势，欢迎洽谈！ |
|||
SMD |
23+ |
NA |
15659 |
振宏微专业只做正品,假一罚百! |
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NE4210S01-T1规格书下载地址
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NE4210S01-T1数据表相关新闻
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DdatasheetPDF页码索引
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