P-Channel MOSFET

■ Features ● VDS (V) =-30V ● ID =-0.9 A (VGS =-4.5V) ● RDS(ON)

P-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description These P -Channel logic level enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly sui

丝印代码：352A；P-Channel Logic Level Enhancement Mode Field Effect Transistor

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Trans MOSFET P-CH 30V 0.9A 3-Pin SuperSOT T/R

P 沟道逻辑电平增强型场效应晶体管，-30V，-0.9A，300mΩ

P-Channel 30 V (D-S) MOSFET

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Dual Hot Carrier Mixer Diodes

Dual Hot Carrier Mixer Diodes These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra−fast switching circuits. Features •Very Low Capacitance −Less Than 1.0 pF @ Zero V •Low Forward Voltage −0.5 V (Typ) @ IF= 10 mA •P

Silicon Complementary Transistors Digital w/2 Built-In Bias 47k Resistors (Surface Mount)

Description: The NTE352 is a silicon NPN transistor in a W65 type package designed primarily for use in 12.5V VHF large–signal power amplifier applications required in commercial and industrial FM equipment to 175MHz. Features: ● Specified 12.5V, 175MHz Characteristics: Output Power = 75W

Square Type

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Square Type

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LinCMOSE DUAL DIFFERENTIAL COMPARATOR

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