MMBD352价格
参考价格：￥0.5850
型号：MMBD352LT1 品牌：ON 备注：这里有MMBD352多少钱，2026年最近7天走势，今日出价，今日竞价，MMBD352批发/采购报价，MMBD352行情走势销售排行榜，MMBD352报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
MMBD352 | Dual Hot Carrier Mixer Diodes Dual Hot Carrier Mixer Diodes These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra−fast switching circuits. Features •Very Low Capacitance −Less Than 1.0 pF @ Zero V •Low Forward Voltage −0.5 V (Typ) @ IF= 10 mA •P | ONSEMI 安森美半导体 |   | |
MMBD352 | Dual Schottky Barrier Diode These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra–fast switching circuits. • Very Low Capacitance — Less Than 1.0 pF @ Zero Volts • Low Forward Voltage — 0.5 Volts (Typ) @ IF = 10 mA | LRC 乐山无线电 | | |
MMBD352 | Dual Hot Carrier Mixer Diodes Dual Hot Carrier Mixer Diodes These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra–fast switching circuits. • Very Low Capacitance — Less Than 1.0 pF @ Zero Volts • Low Forward Voltage — 0.5 Volts (Typ) @ I F = 10 mA | LRC 乐山无线电 | | |
MMBD352 | SURFACE MOUNT SCHOTTKY BARRIER DIODE Very Low Capacitance Low Forward Voltage PN Junction Guard Ring for Transient and ESD Protection For General Purpose Switching Applications Plastic Material – UL Recognition Flammability Classification 94V-0 | WTE Won-Top Electronics | | |
MMBD352 | Dual Hot Carrier Mixer Diodes Dual Hot Carrier Mixer Diodes Features Very low capacitance—Less than 1.0pF@zero V. Low forward voltage—IF=10mA. Power dissipation Pd=300mW Pb/RoHS Free Applications Designed primarily for UHF mixer applications. | LUGUANG 鲁光电子 | | |
MMBD352 | Dual Hot Carrier Mixer Diodes 文件：229.52 Kbytes Page：3 Pages | DSK | | |
MMBD352 | - A,7V,Surface Mount Small Signal Schottky Diodes | GALAXY 银河微电 | | |
MMBD352 | SURFACE MOUNT HIGH FREQUENCY SCHOTTKY DIODE 文件：84.98 Kbytes Page：3 Pages | PANJIT 強茂 | | |
MMBD352 | SURFACE MOUNT HIGH FREQUENCY SCHOTTKY DIODE 文件：133.89 Kbytes Page：3 Pages | PANJIT 強茂 | | |
Dual Hot Carrier Mixer Diodes Dual Hot Carrier Mixer Diodes These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra–fast switching circuits. • Very Low Capacitance — Less Than 1.0 pF @ Zero Volts • Low Forward Voltage — 0.5 Volts (Typ) @ IF= 10 mA | MOTOROLA 摩托罗拉 | | ||
Dual Hot Carrier Mixer Diodes Dual Hot Carrier Mixer Diodes These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra–fast switching circuits. • Very Low Capacitance — Less Than 1.0 pF @ Zero Volts • Low Forward Voltage — 0.5 Volts (Typ) @ I F = 10 mA | LRC 乐山无线电 | | ||
Dual Hot Carrier Mixer Diodes Dual Hot Carrier Mixer Diodes These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra−fast switching circuits. Features •Very Low Capacitance −Less Than 1.0 pF @ Zero V •Low Forward Voltage −0.5 V (Typ) @ IF= 10 mA •P | ONSEMI 安森美半导体 | | ||
Dual Hot Carrier Mixer Diodes | ETC 知名厂家 | ETC | | |
Dual Hot Carrier Mixer Diodes Dual Hot Carrier Mixer Diodes These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra−fast switching circuits. Features •Very Low Capacitance −Less Than 1.0 pF @ Zero V •Low Forward Voltage −0.5 V (Typ) @ IF= 10 mA •P | ONSEMI 安森美半导体 | | ||
Dual Hot Carrier Mixer Diodes Dual Hot Carrier Mixer Diodes These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra−fast switching circuits. Features •Very Low Capacitance −Less Than 1.0 pF @ Zero V •Low Forward Voltage −0.5 V (Typ) @ IF= 10 mA •P | ONSEMI 安森美半导体 | | ||
SURFACE MOUNT SCHOTTKY BARRIER DIODE Very Low Capacitance Low Forward Voltage PN Junction Guard Ring for Transient and ESD Protection For General Purpose Switching Applications Plastic Material – UL Recognition Flammability Classification 94V-0 | WTE Won-Top Electronics | | ||
SURFACE MOUNT SCHOTTKY BARRIER DIODE Very Low Capacitance Low Forward Voltage PN Junction Guard Ring for Transient and ESD Protection For General Purpose Switching Applications Plastic Material – UL Recognition Flammability Classification 94V-0 | WTE Won-Top Electronics | | ||
Schottky Barrier Diodes Features Very low capacitance-less than 1.0Pf @zero volts. Low forward voltage-0.5 Voltage(Typ.) @IF=10mA. Applications For UHF mixer applications. | LUGUANG 鲁光电子 | | ||
SURFACE MOUNT HIGH FREQUENCY SCHOTTKY DIODE FEATURES • Low Capacitance,Minimizing Insertion Losses in VHF Applications • Low VF : 0.5V (Typ) at IF=10mA • Extremely Fast Switching Speed • Pb free product are available : 99 Sn above can meet RoHS environment substance directive request | PANJIT 強茂 | | ||
Dual Schottky Barrier Diode These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra–fast switching circuits. • Very Low Capacitance — Less Than 1.0 pF @ Zero Volts • Low Forward Voltage — 0.5 Volts (Typ) @ IF = 10 mA | LRC 乐山无线电 | | ||
Dual Shottky Barrier Diode These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra−fast switching circuits. Features • Very Low Capacitance − Less Than 1.0 pF @ Zero Volts • Low Forward Voltage − 0.5 Volts (Typ) @ IF = 10 mA • Pb−Free Package is Avail | ONSEMI 安森美半导体 | | ||
Dual Schottky Barrier Diode These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra–fast switching circuits.• Very Low Capacitance — Less Than 1.0 pF @ Zero Volts\n• Low Forward Voltage — 0.5 Volts (Typ) @ IF = 10 mA | LRC 乐山无线电 | | ||
SURFACE MOUNT SCHOTTKY BARRIER DIODE Very Low Capacitance Low Forward Voltage PN Junction Guard Ring for Transient and ESD Protection For General Purpose Switching Applications Plastic Material – UL Recognition Flammability Classification 94V-0 | WTE Won-Top Electronics | | ||
Dual Schottky Barrier Diode These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra−fast switching circuits. Features • Very Low Capacitance − Less Than 1.0 pF @ 0 V • Low Forward Voltage − 0.5 V (Typ) @ IF = 10 mA • AEC Qualified and PPAP Capable • | ONSEMI 安森美半导体 | | ||
Dual Hot Carrier Mixer Diodes 文件：93.76 Kbytes Page：3 Pages | ONSEMI 安森美半导体 | | ||
Dual Hot Carrier Mixer Diodes 文件：93.76 Kbytes Page：3 Pages | ONSEMI 安森美半导体 | | ||
Dual Hot Carrier Mixer Diodes 文件：122.87 Kbytes Page：3 Pages | ONSEMI 安森美半导体 | | ||
Dual Hot Carrier Mixer Diodes 文件：93.76 Kbytes Page：3 Pages | ONSEMI 安森美半导体 | | ||
封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：托盘 描述：DIODE SCHOTTKY 7V 225MW SOT23-3 分立半导体产品 二极管 - 射频 | ONSEMI 安森美半导体 | | ||
Dual Hot Carrier Mixer Diodes 文件：122.87 Kbytes Page：3 Pages | ONSEMI 安森美半导体 | | ||
Dual Hot Carrier Mixer Diodes 文件：93.76 Kbytes Page：3 Pages | ONSEMI 安森美半导体 | | ||
Dual Hot Carrier Mixer Diodes 文件：122.87 Kbytes Page：3 Pages | ONSEMI 安森美半导体 | | ||
Dual Hot Carrier Mixer Diodes 文件：93.76 Kbytes Page：3 Pages | ONSEMI 安森美半导体 | | ||
Schottky Barrier Diode 文件：146.8 Kbytes Page：3 Pages | BILIN 银河微电 | | ||
Schottky Barrier Diode 文件：157.75 Kbytes Page：3 Pages | BILIN 银河微电 | | ||
Schottky Barrier Diode 文件：208.21 Kbytes Page：3 Pages | DSK | | ||
Schottky Barrier Diode 文件：157.75 Kbytes Page：3 Pages | BILIN 银河微电 | | ||
Dual Schottky Barrier Diode 文件：43.18 Kbytes Page：4 Pages | ONSEMI 安森美半导体 | | ||
Dual Schottky Barrier Diode 文件：43.18 Kbytes Page：4 Pages | ONSEMI 安森美半导体 | | ||
Dual Schottky Barrier Diode 文件：43.18 Kbytes Page：4 Pages | ONSEMI 安森美半导体 | | ||
封装/外壳：SC-70，SOT-323 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：RF DIODE SCHOTTKY 7V 200MW SC70 分立半导体产品 二极管 - 射频 | ONSEMI 安森美半导体 | | ||
Silicon Complementary Transistors Digital w/2 Built-In Bias 47k Resistors (Surface Mount) Description: The NTE352 is a silicon NPN transistor in a W65 type package designed primarily for use in 12.5V VHF large–signal power amplifier applications required in commercial and industrial FM equipment to 175MHz. Features: ● Specified 12.5V, 175MHz Characteristics: Output Power = 75W | NTE | | ||
Square Type 文件：31.46 Kbytes Page：1 Pages | PANASONIC 松下 | | ||
Square Type 文件：32 Kbytes Page：1 Pages | PANASONIC 松下 | | ||
LinCMOSE DUAL DIFFERENTIAL COMPARATOR 文件：140.77 Kbytes Page：9 Pages | TI 德州仪器 | |
MMBD352产品属性
- 类型
描述
- VRRM_Max_(V)：
7
- VF_Max_(V)：
0.6
- @ IF (A)：
0.01
- IR_Max_(uA)：
10
- @VR (V)：
7
- Pin：
F6
- Package_Outlines：
SOT-23
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MOTOROLA |
05+ |
原厂原装 |
1081 |
只做全新原装真实现货供应 |
|||
ONSEMI/安森美 |
2450+ |
SOT23-3 |
6540 |
只做原装正品现货或订货!终端客户免费申请样品! |
|||
ON |
SOT-23 |
16000 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
ON(安森美) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
ON(安森美) |
23+ |
SOT-23 |
10522 |
公司只做原装正品,假一赔十 |
|||
ON |
24+/25+ |
2308 |
原装正品现货库存价优 |
||||
ON/安森美 |
23+ |
SOT-23 |
24190 |
原装正品代理渠道价格优势 |
|||
ON(安森美) |
23+ |
标准封装 |
5000 |
原厂原装现货订货价格优势终端BOM表可配单提供样品 |
|||
MOT |
25+ |
2700 |
公司优势库存 热卖中!! |
||||
ON(安森美) |
26+ |
NA |
60000 |
只有原装 可配单 |
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2020-11-12
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