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MMBD352价格
参考价格：￥0.5850
型号：MMBD352LT1 品牌：ON 备注：这里有MMBD352多少钱，2025年最近7天走势，今日出价，今日竞价，MMBD352批发/采购报价，MMBD352行情走势销售排行榜，MMBD352报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
MMBD352 | Dual Hot Carrier Mixer Diodes Dual Hot Carrier Mixer Diodes These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra−fast switching circuits. Features •Very Low Capacitance −Less Than 1.0 pF @ Zero V •Low Forward Voltage −0.5 V (Typ) @ IF= 10 mA •P | ONSEMI 安森美半导体 |   | |
MMBD352 | Dual Schottky Barrier Diode These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra–fast switching circuits. • Very Low Capacitance — Less Than 1.0 pF @ Zero Volts • Low Forward Voltage — 0.5 Volts (Typ) @ IF = 10 mA | LRC 乐山无线电 | | |
MMBD352 | Dual Hot Carrier Mixer Diodes Dual Hot Carrier Mixer Diodes These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra–fast switching circuits. • Very Low Capacitance — Less Than 1.0 pF @ Zero Volts • Low Forward Voltage — 0.5 Volts (Typ) @ I F = 10 mA | LRC 乐山无线电 | | |
MMBD352 | Dual Hot Carrier Mixer Diodes Dual Hot Carrier Mixer Diodes Features Very low capacitance—Less than 1.0pF@zero V. Low forward voltage—IF=10mA. Power dissipation Pd=300mW Pb/RoHS Free Applications Designed primarily for UHF mixer applications. | LUGUANG 鲁光电子 | | |
MMBD352 | SURFACE MOUNT SCHOTTKY BARRIER DIODE Very Low Capacitance Low Forward Voltage PN Junction Guard Ring for Transient and ESD Protection For General Purpose Switching Applications Plastic Material – UL Recognition Flammability Classification 94V-0 | WTE Won-Top Electronics | | |
MMBD352 | Dual Hot Carrier Mixer Diodes 文件：229.52 Kbytes Page：3 Pages | DSK | | |
MMBD352 | - A,7V,Surface Mount Small Signal Schottky Diodes | GALAXYCHANGZHOU GALAXY CENTURY MICROELECTRONICS CO.,LTD. 银河微电常州银河世纪微电子股份有限公司 | | |
MMBD352 | SURFACE MOUNT HIGH FREQUENCY SCHOTTKY DIODE 文件：133.89 Kbytes Page：3 Pages | PANJIT 強茂 | | |
MMBD352 | SURFACE MOUNT HIGH FREQUENCY SCHOTTKY DIODE 文件：84.98 Kbytes Page：3 Pages | PANJIT 強茂 | | |
Dual Hot Carrier Mixer Diodes Dual Hot Carrier Mixer Diodes These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra–fast switching circuits. • Very Low Capacitance — Less Than 1.0 pF @ Zero Volts • Low Forward Voltage — 0.5 Volts (Typ) @ I F = 10 mA | LRC 乐山无线电 | | ||
Dual Hot Carrier Mixer Diodes Dual Hot Carrier Mixer Diodes These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra−fast switching circuits. Features •Very Low Capacitance −Less Than 1.0 pF @ Zero V •Low Forward Voltage −0.5 V (Typ) @ IF= 10 mA •P | ONSEMI 安森美半导体 | | ||
Dual Hot Carrier Mixer Diodes Dual Hot Carrier Mixer Diodes These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra–fast switching circuits. • Very Low Capacitance — Less Than 1.0 pF @ Zero Volts • Low Forward Voltage — 0.5 Volts (Typ) @ IF= 10 mA | Motorola 摩托罗拉 | | ||
Dual Hot Carrier Mixer Diodes Dual Hot Carrier Mixer Diodes These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra−fast switching circuits. Features •Very Low Capacitance −Less Than 1.0 pF @ Zero V •Low Forward Voltage −0.5 V (Typ) @ IF= 10 mA •P | ONSEMI 安森美半导体 | | ||
Dual Hot Carrier Mixer Diodes Dual Hot Carrier Mixer Diodes These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra−fast switching circuits. Features •Very Low Capacitance −Less Than 1.0 pF @ Zero V •Low Forward Voltage −0.5 V (Typ) @ IF= 10 mA •P | ONSEMI 安森美半导体 | | ||
SURFACE MOUNT SCHOTTKY BARRIER DIODE Very Low Capacitance Low Forward Voltage PN Junction Guard Ring for Transient and ESD Protection For General Purpose Switching Applications Plastic Material – UL Recognition Flammability Classification 94V-0 | WTE Won-Top Electronics | | ||
SURFACE MOUNT SCHOTTKY BARRIER DIODE Very Low Capacitance Low Forward Voltage PN Junction Guard Ring for Transient and ESD Protection For General Purpose Switching Applications Plastic Material – UL Recognition Flammability Classification 94V-0 | WTE Won-Top Electronics | | ||
Schottky Barrier Diodes Features Very low capacitance-less than 1.0Pf @zero volts. Low forward voltage-0.5 Voltage(Typ.) @IF=10mA. Applications For UHF mixer applications. | LUGUANG 鲁光电子 | | ||
SURFACE MOUNT HIGH FREQUENCY SCHOTTKY DIODE FEATURES • Low Capacitance,Minimizing Insertion Losses in VHF Applications • Low VF : 0.5V (Typ) at IF=10mA • Extremely Fast Switching Speed • Pb free product are available : 99 Sn above can meet RoHS environment substance directive request | PANJIT 強茂 | | ||
Dual Schottky Barrier Diode These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra–fast switching circuits. • Very Low Capacitance — Less Than 1.0 pF @ Zero Volts • Low Forward Voltage — 0.5 Volts (Typ) @ IF = 10 mA | LRC 乐山无线电 | | ||
Dual Shottky Barrier Diode These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra−fast switching circuits. Features • Very Low Capacitance − Less Than 1.0 pF @ Zero Volts • Low Forward Voltage − 0.5 Volts (Typ) @ IF = 10 mA • Pb−Free Package is Avail | ONSEMI 安森美半导体 | | ||
SURFACE MOUNT SCHOTTKY BARRIER DIODE Very Low Capacitance Low Forward Voltage PN Junction Guard Ring for Transient and ESD Protection For General Purpose Switching Applications Plastic Material – UL Recognition Flammability Classification 94V-0 | WTE Won-Top Electronics | | ||
Dual Schottky Barrier Diode These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra−fast switching circuits. Features • Very Low Capacitance − Less Than 1.0 pF @ 0 V • Low Forward Voltage − 0.5 V (Typ) @ IF = 10 mA • AEC Qualified and PPAP Capable • | ONSEMI 安森美半导体 | | ||
Dual Hot Carrier Mixer Diodes 文件：93.76 Kbytes Page：3 Pages | ONSEMI 安森美半导体 | | ||
Dual Hot Carrier Mixer Diodes | ETC 知名厂家 | ETC | | |
Dual Hot Carrier Mixer Diodes 文件：93.76 Kbytes Page：3 Pages | ONSEMI 安森美半导体 | | ||
Dual Hot Carrier Mixer Diodes 文件：93.76 Kbytes Page：3 Pages | ONSEMI 安森美半导体 | | ||
Dual Hot Carrier Mixer Diodes 文件：122.87 Kbytes Page：3 Pages | ONSEMI 安森美半导体 | | ||
封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：托盘 描述：DIODE SCHOTTKY 7V 225MW SOT23-3 分立半导体产品 二极管 - 射频 | ONSEMI 安森美半导体 | | ||
Dual Hot Carrier Mixer Diodes 文件：122.87 Kbytes Page：3 Pages | ONSEMI 安森美半导体 | | ||
Dual Hot Carrier Mixer Diodes 文件：93.76 Kbytes Page：3 Pages | ONSEMI 安森美半导体 | | ||
Dual Hot Carrier Mixer Diodes 文件：122.87 Kbytes Page：3 Pages | ONSEMI 安森美半导体 | | ||
Dual Hot Carrier Mixer Diodes 文件：93.76 Kbytes Page：3 Pages | ONSEMI 安森美半导体 | | ||
Schottky Barrier Diode 文件：146.8 Kbytes Page：3 Pages | BILIN 银河微电 | | ||
Schottky Barrier Diode 文件：208.21 Kbytes Page：3 Pages | DSK | | ||
Schottky Barrier Diode 文件：157.75 Kbytes Page：3 Pages | BILIN 银河微电 | | ||
Schottky Barrier Diode 文件：157.75 Kbytes Page：3 Pages | BILIN 银河微电 | | ||
Dual Schottky Barrier Diode 文件：43.18 Kbytes Page：4 Pages | ONSEMI 安森美半导体 | | ||
Dual Schottky Barrier Diode | LRC 乐山无线电 | | ||
Dual Schottky Barrier Diode 文件：43.18 Kbytes Page：4 Pages | ONSEMI 安森美半导体 | | ||
Dual Schottky Barrier Diode 文件：43.18 Kbytes Page：4 Pages | ONSEMI 安森美半导体 | | ||
封装/外壳：SC-70，SOT-323 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：RF DIODE SCHOTTKY 7V 200MW SC70 分立半导体产品 二极管 - 射频 | ONSEMI 安森美半导体 | | ||
Celeron D Processor 文件：2.07013 Mbytes Page：95 Pages | Intel 英特尔 | | ||
THRU-HOLE SLEEVE, PROTRUDING 文件：114.87 Kbytes Page：1 Pages | WITTEN | | ||
An extensive range of premium quality, problem solving adapters including 1/4, XLR, RCA, DMX, BNC, 75/110 Ohm, impedance matching transformers, and much more. 文件：390.92 Kbytes Page：1 Pages | SWITCH Switch Publishing Co.，Ltd. | | ||
Hinged top panel for 352HL and 352HS 文件：448.71 Kbytes Page：4 Pages | etc2List of Unclassifed Manufacturers etc未分类制造商etc2未分类制造商 | | ||
Universal-Instrument MINIPAN 352P in Housing for Panel-Mount 72 x 72 mm 文件：273.66 Kbytes Page：2 Pages | ZIEHL | |
MMBD352产品属性
- 类型
描述
- 型号
MMBD352
- 制造商
PANJIT
- 制造商全称
Pan Jit International Inc.
- 功能描述
SURFACE MOUNT HIGH FREQUENCY SCHOTTKY DIODE
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON/安森美 |
24+ |
NA/ |
3000 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
ON(安森美) |
24+ |
标准封装 |
11247 |
全新原装正品/价格优惠/质量保障 |
|||
ONSEMI/安森美 |
25+ |
SOT-323 |
32000 |
ONSEMI/安森美全新特价MMBD352WT1G即刻询购立享优惠#长期有货 |
|||
ON |
23+ |
1378 |
专做原装正品,假一罚百! |
||||
ON/安森美 |
21+ |
SOT-23-3 |
8080 |
只做原装,质量保证 |
|||
ON/安森美 |
24+ |
SOT23 |
98000 |
原装现货假一罚十 |
|||
ON |
09+ |
SOT23 |
579 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
三年内 |
1983 |
只做原装正品 |
|||||
ON |
23+ |
SOT-323 |
14873 |
正规渠道,只有原装! |
|||
ON(安森美) |
24+ |
标准封装 |
8000 |
原装，正品 |
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2020-11-12
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