P-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description These P -Channel logic level enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly sui

P-Channel MOSFET

■ Features ● VDS (V) =-30V ● ID =-0.9 A (VGS =-4.5V) ● RDS(ON)

P-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suit

P-Channel 20-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switch • PA Switch • DC/DC Converters

Trans MOSFET P-CH 30V 0.9A 3-Pin SuperSOT T/R

P 沟道逻辑电平增强型场效应晶体管，-30V，-0.9A，300mΩ

P-Channel Logic Level Enhancement Mode Field Effect Transistor

文件：271.06 Kbytes Page：9 Pages

P-Channel 30 V (D-S) MOSFET

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P-Channel Logic Level Enhancement Mode Field Effect Transistor

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