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NDD03N60Z价格
参考价格：￥1.7100
型号：NDD03N60Z-1G 品牌：ONSemi 备注：这里有NDD03N60Z多少钱，2026年最近7天走势，今日出价，今日竞价，NDD03N60Z批发/采购报价，NDD03N60Z行情走势销售排行榜，NDD03N60Z报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
NDD03N60Z | isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 2.6A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 3.6Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) | ISC 无锡固电 |   | |
NDD03N60Z | Power MOSFET 600V 2.6A 3.6 Ohm Single N-Channel DPAK | ONSEMI 安森美半导体 | | |
NDD03N60Z | N-Channel Power MOSFET 600 V, 3.3 文件：167.82 Kbytes Page：10 Pages | ONSEMI 安森美半导体 | | |
NDD03N60Z | N-Channel Power MOSFET 600 V, 3.6 文件：137.18 Kbytes Page：10 Pages | ONSEMI 安森美半导体 | | |
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 2.6A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 3.6Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | ||
N-Channel Power MOSFET 600 V, 3.3 文件：167.82 Kbytes Page：10 Pages | ONSEMI 安森美半导体 | | ||
N-Channel Power MOSFET 文件：147.81 Kbytes Page：10 Pages | ONSEMI 安森美半导体 | | ||
N-Channel Power MOSFET | ONSEMI 安森美半导体 | | ||
Power MOSFET 文件：1.07623 Mbytes Page：9 Pages | VBSEMI 微碧半导体 | | ||
N-Channel MOSFET uses advanced trench technology 文件：1.79994 Mbytes Page：5 Pages | DOINGTER 杜因特 | | ||
N-Channel Power MOSFET 文件：147.81 Kbytes Page：10 Pages | ONSEMI 安森美半导体 | | ||
N-Channel Power MOSFET 600 V, 3.3 文件：167.82 Kbytes Page：10 Pages | ONSEMI 安森美半导体 | | ||
LightMOS Power Transistor LightMOS Power Transistor • New high voltage technology designed for ZVS-switching in lamp ballasts • IGBT with integrated reverse diode • 4A current rating for reverse diode • Up to 10 times lower gate capacitance than MOSFET • Avalanche rated • 150°C operating temperature • FullPak is | INFINEON 英飞凌 | | ||
LightMOS Power Transistor LightMOS Power Transistor • New high voltage technology designed for ZVS-switching in lamp ballasts • IGBT with integrated reverse diode • 4A current rating for reverse diode • Up to 10 times lower gate capacitance than MOSFET • Avalanche rated • 150°C operating temperature • FullPak is | INFINEON 英飞凌 | | ||
LightMOS Power Transistor LightMOS Power Transistor • New high voltage technology designed for ZVS-switching in lamp ballasts • IGBT with integrated reverse diode • 4A current rating for reverse diode • Up to 10 times lower gate capacitance than MOSFET • Avalanche rated • 150°C operating temperature • FullPak is | INFINEON 英飞凌 | | ||
LightMOS Power Transistor LightMOS Power Transistor • New high voltage technology designed for ZVS-switching in lamp ballasts • IGBT with integrated reverse diode • 4A current rating for reverse diode • Up to 10 times lower gate capacitance than MOSFET • Avalanche rated • 150°C operating temperature • FullPak is | INFINEON 英飞凌 | | ||
P03N60 TO-220 Small Signal MOSFET 文件：206.91 Kbytes Page：2 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | |
NDD03N60Z产品属性
- 类型
描述
- 型号
NDD03N60Z
- 制造商
ONSEMI
- 制造商全称
ON Semiconductor
- 功能描述
N-Channel Power MOSFET 600 V, 3.3
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON(安森美) |
24+ |
标准封装 |
8689 |
全新原装正品/价格优惠/质量保障 |
|||
onsemi |
25+ |
DPAK (TO-252) |
21000 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
ON |
24+ |
TO252 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
PTIF |
P |
9999999999 |
10 |
原装现货支持BOM配单服务 |
|||
ON |
22+ |
I-PAK |
3000 |
原装正品,支持实单 |
|||
ON |
17+ |
TO-252 |
6200 |
100%原装正品现货 |
|||
ON |
26+ |
TSSOP14 |
86720 |
全新原装进口现货价格优惠 本公司承诺原装正品假一赔 |
|||
ON(安森美) |
23+ |
标准封装 |
5000 |
原厂原装现货订货价格优势终端BOM表可配单提供样品 |
|||
ON |
1706+ |
? |
7500 |
只做原装进口,假一罚十 |
|||
三年内 |
1983 |
只做原装正品 |
NDD03N60Z规格书下载地址
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DdatasheetPDF页码索引
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